Page 1
2N4901 – 2N4902 – 2N4903
PNP SILICON TRANSISTORS, EPITAXIAL BASE
LF Large signal power amplification
Switching medium current
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
V
V
I
I
I
P
T
T
C
CM
B
CBO
CEO
CER
EBO
CEX
TOT
J
STG
Collector to Base Voltage
#Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage VBE=1.5 V
Collector Current – Continuous
Collector Current – Peak tp=5 ms
Base Current – Continuous
Power Dissipation
Junction Temperature
Storage Temperature
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
-40
-60
-80
-40
-60
-80
-40
-60
-80
-5.0 V
-40
-60
-80
-5 A
-10 A
-1 A
87.5 W
200 °C
-65 to
+200
V
V
V
V
°C
COMSET SEMICONDUCTORS 1/3
Page 2
2N4901 – 2N4902 – 2N4903
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJC
R
thJA
Thermal Resistance, Junction to Case
Junction to Free Air Thermal Resistance
ELECTRICAL C HARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s)
V
CEO(BR)
I
CBO
I
CEO
I
CEX
h
21E
h
21e
V
CE(SAT)
Collector-Emitter
Breakdown Voltage)
Collector-Base cut-off
Current
Collector-Emitter cut-off
Current
Collector Cutoff Current
DC Current Gain (*)
Forward Current Transfer
Ratio (*)
Collector-Emitter saturation
Voltage (*)
I
=200 mAdc, IB=0
C
VCE=-40 V, IE=0 2N4901 - - 1.0
VCE=-60 V, IE=0 2N4902 - - 1.0
=-80 V, IE=0 2N4903 - - 1.0
V
CE
VCE=-40 V, IB=0 2N4901 - - 1.0
VCE=-60 V, IB=0 2N4902 - - 1.0
V
=-80 V, IB=0 2N4903 - - 1.0
CE
VCE=-40 V, VEB=1.5 V - - -0.1
VCE=-40 V, VEB=1.5 V,
T
=150°C
CASE
VCE=-60 V, VEB=1.5 V - - -0.1
VCE=-60 V, VEB=1.5 V,
=150°C
T
CASE
VCE=-80 V, VEB=1.5 V - - -0.1
=-60 V, VEB=1.5 V,
V
CE
T
=150°C
CASE
VCE=-2.0 V, IC=-1.0 A
=-2.0 V, IC=-5.0 A
V
CE
VCE=-10 V, IC=-0.5 A,
f=1.0 kHz
IC=-1.0 A, IB=-0.1 A
=-5.0 A, IB=-1.0 A
I
C
47.3 °C/W
Min Typ Mx Unit
2N4901 -40
2N4902 -60
2N4903 -80
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
---2.0
---2.0
---2.0
20 - 80
7--
20 - - V
---0.4
---1.5
2°C/W
--V
mA
mA
mA
V
V
COMSET SEMICONDUCTORS 2/3
Page 3
2N4901 – 2N4902 – 2N4903
Symbol Ratings Test Condition(s)
V
BE(SAT)
V
BE
f
T
I
s/b
In accordance with JEDEC Registration Data
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Base-Emitter Saturation
Voltage (*)
I
=-5.0 A, IB=-1.0 A
C
Base-Emitter Voltage (*) IC=-1.0 A, VCE=-2.0 V
=-10 V, IC=-1.0 A,
V
Transition Frequency
Second Breakdown
Collector Current
CE
f=1.0 kHz
t=1 s, VCE=40 V,
T
=100°C
CASE
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,45 1
B 38,8 1,52
C 30,09 1,184
D 17,11 0,67
E 9,78 0,38
G 11,09 0,43
H 8,33 0,32
L 1,62 0,06
M 19,43 0,76
N 1 0,04
P 4,08 0,16
Min Typ Mx Unit
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
2N4901
2N4902
2N4903
-1.7- V
---1.2V
4--MHz
1.25 - - A
mA
Pin 1 : Base
Pin 2 : Emitter
Case : Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no respons ability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS 3/3
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