Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N4864
DESCRIPTION
·With TO-66 package
·Continuous collector current-I
·High V
:120V (Min)
CEO
APPLICATIONS
·For use in general-purpose switching
and
linear amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
=2A
C
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
PT Total power dissipation TC=25℃ 16 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 140 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
(th) jc
Thermal resistance junction to case 7.0
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N4864
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CEX
I
CEO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1 A ; IB=0 120 V
Collector-emitter saturation voltage I
Base-emitter saturation voltage I
Base -emitter on voltage I
Collector cut-off current
=2A; IB=0.4A 1.5 V
C
=2A; IB=0.4A 2.0 V
C
=0.5A ; VCE=5V 1.5 V
C
V
CE
=150℃
T
C
=140V;V
BE(off)
=1.5V
2.0
5.0
mA
Collector cut-off current VCE=120V; IB=0 10 mA
Emitter cut-off current VEB=7V; IC=0 1.0 mA
DC current gain IC=0.5A ; VCE=5V 50 150
DC current gain IC=2A ; VCE=5V 10
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF
fT Transition frequency IC=0.5A ; VCE=5V 50 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N4864
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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