Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
2N3866; 2N4427
Silicon planar epitaxial
overlay transistors
Product specification
Supersedes data of August 1986
File under Discrete Semiconductors, SC08a
1995 Oct 27
Page 2
Philips Semiconductors Product specification
Silicon planar epitaxial
overlay transistors
DESCRIPTION
NPN overlay transistors in TO-39 metal packages with the
collector connected to the case. The devices are primarily
intended for class-A, B or C amplifiers, frequency multiplier
and oscillator circuits.
PINNING - TO-39/1
PIN DESCRIPTION
1 emitter
2 base
3 collector
2N3866; 2N4427
APPLICATIONS
• The transistors are intended for use in output, driver or
pre-driver stages in VHF and UHF equipment.
handbook, halfpage
1
2
3
Fig.1 Simplified outline.
MBB199
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CER
collector-emitter voltage RBE=10Ω
2N3866 − 55 V
2N4427 − 40 V
V
CEO
collector-emitter voltage open base
2N3866 − 30 V
2N4427 − 20 V
V
EBO
emitter-base voltage open collector
2N3866 − 3.5 V
2N4427 − 2.0 V
I
C
I
C(AV)
collector current (DC) − 0.4 A
average collector current measured over any 20 ms
− 0.4 A
period
P
tot
f
T
total power dissipation up to Tmb=25°C − 3.5 W
transition frequency IC= 50 mA; VCE=15V;
500 − MHz
f = 200 MHz
T
j
junction temperature − 200 °C
RF performance
TYPE NUMBER
f
(MHz)
V
(V)
CE
P
(W)
o
G
p
(dB)
2N3866 400 28 1 >10 >45
2N4427 175 12 1 >10 >50
1995 Oct 27 2
η
(%)
Page 3
Philips Semiconductors Product specification
Silicon planar epitaxial
2N3866; 2N4427
overlay transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
I
C(AV)
I
CM
P
tot
T
stg
T
j
collector-base voltage open emitter
2N3866 − 55 V
2N4427 − 40 V
collector-emitter voltage RBE=10Ω
2N3866 − 55 V
2N4427 − 40 V
collector-emitter voltage open base
2N3866 − 30 V
2N4427 − 20 V
emitter-base voltage open collector
2N3866 − 3.5 V
2N4427 − 2.0 V
collector current (DC) − 0.4 A
average collector current measured over any 20 ms
− 0.4 A
period
collector current peak value − 0.4 A
total power dissipation up to Tmb=25°C − 3.5 W
storage temperature −65 +200 °C
junction temperature − 200 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction
200 K/W
to ambient in free air
R
th j-mb
thermal resistance from junction
50 K/W
to mounting base
R
th mb-h
thermal resistance from
mounting base to heatsink
note 1 1.0 K/W
note 2 2.5 K/W
Notes
1. Mounted with top clamping washer 56218.
2. Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation.
1995 Oct 27 3
Page 4
Philips Semiconductors Product specification
Silicon planar epitaxial
overlay transistors
1
handbook, halfpage
I
C
(A)
1
10
2
10
Tmb=25°C.
(1) 2N4427.
(2) 2N3866.
101
(1) (2)
VCE (V)
MGC589
2N3866; 2N4427
handbook, halfpage
2
10
4
P
tot
(W)
3
2
1
0
0 50 100 200
MGC590
150
Tmb (oC)
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1995 Oct 27 4
Page 5
Philips Semiconductors Product specification
Silicon planar epitaxial
2N3866; 2N4427
overlay transistors
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
V
CEsat
I
CEO
h
FE
f
T
C
c
collector-base breakdown voltage open emitter; IC= 100 µA
2N3866 55 − V
2N4427 40 − V
collector-emitter breakdown voltage open base; IC=5mA
2N3866 30 − V
2N4427 20 − V
collector-emitter breakdown voltage RBE=10Ω; IC=5mA
2N3866 55 − V
2N4427 40 − V
emitter-base breakdown voltage open collector; IE= 100 µA
2N3866 3.5 − V
2N4427 2 − V
collector-emitter saturation voltage IC= 100 mA; IB=20mA
2N3866 − 1V
2N4427 − 0.5 V
collector leakage current
2N3866 open base; V
2N4427 open base; V
=28V − 20 µA
CE
=12V − 20 µA
CE
DC current gain
2N3866 I
2N3866 I
2N4427 I
2N4427 I
= 50 mA; VCE= 5 V 10 200
C
= 360 mA; VCE=5V 5 −
C
= 100 mA; VCE= 5 V 10 200
C
= 360 mA; VCE=5V 5 −
C
transition frequency IC= 50 mA; VCE= 15 V; f = 200 MHz 500 − MHz
collector capacitance
2N3866 V
2N4427 V
=28V; IE=Ie= 0; f = 1 MHz − 3pF
CB
=12V; IE=Ie= 0; f = 1 MHz − 4pF
CB
APPLICATION INFORMATION
Table 1 RF performance at T
TYPE
NUMBER
f
(MHz)
=25°C.
mb
V
(V)
CE
P
(W)
o
G
p
(dB)
I
C
(mA)
2N3866 100 28 1.8 >10 <107 >60
250 28 1.5 >10 <107 >50
400 28 1.0 >10 <79 >45
2N4427 175 12 1.0 >10 <167 >50
470 12 0.4 >10 67 50
1995 Oct 27 5
η
(%)
Page 6
Philips Semiconductors Product specification
Silicon planar epitaxial
2N3866; 2N4427
overlay transistors
Ruggedness
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases,
under the conditions mentioned in Table 1.
C3
handbook, full pagewidth
input
50 Ω
C1
C2
L1
DUT
L2
C7
R2 R1
C5
V
EE
L5
L4
C6
L3
C4
output
50 Ω
MGC941
VEE= −28V
Fig.4 Test circuit for the 2N3866 at 400 MHz.
List of components (see Fig.4)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C2, C3 air trimmer capacitor 4 to 29 pF
C4 air trimmer capacitor 4 to 14 pF
C5 feed-through
1nF
capacitor
C6 capacitor 12 pF
C7 capacitor 12 nF
R1 resistor 5.6 Ω
R2 resistor 10 Ω
L1 2 turns 1.0 mm
copper wire
L2 Ferroxcube choke coil Z = 450 Ω;
− int. diameter 6 mm;
winding pitch 3 mm
4312 020 36690
f = 250 MHz
L3, L4 6 turns enamelled
100 nH int. diameter 3.5 mm
0.5 mm copper wire
L5 2 turns 1.0 mm
copper wire
− int. diameter 7 mm;
winding pitch
2.5 mm; leads
2 × 15 mm
1995 Oct 27 6
Page 7
Philips Semiconductors Product specification
Silicon planar epitaxial
overlay transistors
handbook, full pagewidth
input
50 Ω
C1
C2
2N3866; 2N4427
V
CC
C3
C6
R
output
L4
C4
50 Ω
MGC940
C5
L3
L1
DUT
(1)
L2
VCC= +12 V.
(1) The length of the external emitter wire is 1.6 mm.
Fig.5 Test circuit for the 2N4427 at 175 MHz.
List of components (see Fig.5)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C2, C3, C4 air trimmer capacitor 4 to 29 pF
C5 feed-through
1nF
capacitor
C6 capacitor 12 nF
R resistor 10 Ω
L1 2 turns 1.0 mm
copper wire
− int. diameter 6 mm;
winding pitch 2 mm;
leads 2 × 10 mm
L2 Ferroxcube choke coil Z = 550 Ω;
4312 020 36640
f = 175 MHz
L3 2 turns 1.0 mm
copper wire
− int. diameter 5 mm;
winding pitch 2 mm;
leads 2 × 10 mm
L4 3 turns 1.5 mm
copper wire
− int. diameter 10 mm;
winding pitch 2 mm;
leads 2 × 15 mm
1995 Oct 27 7
Page 8
Philips Semiconductors Product specification
Silicon planar epitaxial
overlay transistors
PACKAGE OUTLINE
handbook, full pagewidth
0.86
max
1.0
max
o
45
9.4 max
5.08
2N3866; 2N4427
1
2
8.5
max
3
6.6
max
12.7 min
0.51
max
MSA241
Dimensions in mm.
Fig.6 TO-39.
1995 Oct 27 8
Page 9
Philips Semiconductors Product specification
Silicon planar epitaxial
2N3866; 2N4427
overlay transistors
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Oct 27 9
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