Datasheet 2N4410 Datasheet (ON Semiconductor)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 

NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

80 Vdc

Collector–Base Voltage V

CBO

120 Vdc

Emitter–Base Voltage V

EBO

5.0 Vdc

Collector Current — Continuous I

C

250 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R

q

JA

200 °C/W

Thermal Resistance, Junction to Case R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = 1.0 mAdc, IB = 0)

V

(BR)CEO

80 — Vdc

Collector–Emitter Breakdown Voltage

(IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms)

V

(BR)CEX

120 — Vdc

Collector–Base Breakdown Voltage

(IC = 10 µAdc, IE = 0)

V

(BR)CBO

120 — Vdc

Emitter–Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V

(BR)EBO

5.0 — Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)

I

CBO

—
—

0.01

1.0

µAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

I

EBO

— 0.1 µAdc

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Order this document

by 2N4410/D



SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3



 Motorola, Inc. 1996

COLLECTOR

3

2

BASE

1

EMITTER

REV 1

2N4410

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)

h

FE

60
60

—

400

—

Collector–Emitter Saturation Voltage

(IC = 1.0 mAdc, IB = 0.1 mAdc)

V

CE(sat)

— 0.2 Vdc

Base–Emitter Saturation Voltage

(IC = 1.0 mAdc, IB = 0.1 mAdc)

V

BE(sat)

— 0.8 Vdc

Base–Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

V

BE(on)

— 0.8 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(2)

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

f

T

60 300 MHz

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded)

C

cb

— 12 pF

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded)

C

eb

— 50 pF

2. fT = |hfe| • f

test

.

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

500

h , DC CURRENT GAIN

FE

TJ = 125°C

–55°C

25°C

5.0

10

0.1 0.2 0.3 0.5 0.7 1.0

2.0

3.0

5.0 7.0 10 20 30 50 70 100

200

30
20

300

100

50

7.0

VCE = 1.0 V
VCE = 5.0 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

IC = 1.0 mA

0

0.3

0.005 0.01 0.2 0.5 1.0

2.0 20 50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02 0.05 0.1

10

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

10 mA

30 mA

100 mA

5.0

2N4410

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. Collector Cut–Off Region

IC, COLLECTOR CURRENT (mA)

1.0

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

2.5

100

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

q

VC

for V

CE(sat)

q

VB

for V

BE(sat)

0.1 0.2 0.5

Figure 4. “On” Voltages

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

1

10

–5

Figure 5. Temperature Coefficients

TJ = –55°C to +135°C

0.4 0.3 0.1

0.8

0.6

0.4

0.2

0

10

0

10

–1

10

–2

10

–3

10

–4

0.2 0 0.1 0.2 0.40.3 0.60.5

VCE = 30 V

TJ = 125°C

75°C

25°C

IC = I

CES

, COLLECTOR CURRENT ( A)

µ

I

C

V

, TEMPERATURE COEFFICIENT (mV/ C)

°θ

3.0 30

2.0

1.5

1.0

0.5
0

–0.5
–1.0
–1.5
–2.0
–2.5

C, CAPACITANCE (pF)

Figure 6. Switching Time Test Circuit

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

0.2 0.5 1.0 2.0 5.0 10 20

C

ibo

70
50

30
20

10

7.0

5.0

3.0

2.0

0.3 0.7 3.0 7.0

C

obo

Figure 7. Capacitances

REVERSE FORWARD

0.3 1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3

10.2 V
V

in

10 µs

INPUT PULSE

V

BB

–8.8 V
100

R

B

5.1 k

0.25

µ

F

V

in

100

1N914

V

out

R

C

V

CC

30 V

3.0 k

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

TJ = 25°C

2N4410

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 8. Turn–On Time

IC, COLLECTOR CURRENT (mA)

1000

Figure 9. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

0.3 1.0 10

20 30 50

5000

0.50.2

t, TIME (ns)

t, TIME (ns)

10

20

30

50

100

200

300

500

2.0

100 200

IC/IB = 10
TJ = 25

°

C

tr @ VCC = 120 V

50

100

200

300

500

3.0 5.0

tr @ VCC = 30 V

td @ V

EB(off)

= 1.0 V

VCC = 120 V

3000
2000

1000

0.3 1.0 10

20 30 50

0.50.2 2.0

100 200

3.0 5.0

IC/IB = 10
TJ = 25

°

C

tf @ VCC = 120 V

tf @ VCC = 30 V

ts @ VCC = 120 V

2N4410

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

R

A

P

J

L

F

B

K

G

H

SECTION X–X

C

V

D

N

N

X X

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

1

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

CASE 029–04

(TO–226AA)

ISSUE AD

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

2N4410

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

How to reach us:
USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: [e-mail] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

2N4410/D



◊