Datasheet 2N4403-D Datasheet (ON Semiconductor)

2N4403

Preferred Device

General Purpose
Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base V oltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction

Temperature Range

CEO
CBO
EBO

P

P

TJ, T

C

D

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

q

JA

q

JC

40 Vdc
40 Vdc

5.0 Vdc
600 mAdc
625

5.0

1.5

12

−55 to +150 °C

200 °C/W

83.3 °C/W

mW

mW/°C

W

mW/°C

TO−92
CASE 29
STYLE 1

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COLLECTOR

3

2

BASE

1

EMITTER

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

2N

4403

AYWWG

G

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 3

1 Publication Order Number:

2N4403 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future
use and best overall value.

2N4403/D

2N4403

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown V oltage (Note 1) (I

= 1.0 mAdc, IB = 0) V

C

Collector−Base Breakdown V oltage (IC = 0.1 mAdc, IE = 0) V
Emitter−Base Breakdown V oltage (IE = 0.1 mAdc, IC = 0) V
Base Cutoff Current (VCE = 35 Vdc, V

= 0.4 Vdc) I

EB

Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) I

ON CHARACTERISTICS

DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1)

Collector−Emitter Saturation V oltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

Base−Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) f
Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) C
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h

SWITCHING CHARACTERISTICS

Delay Time
Rise Time t
Storage Time
Fall Time t

(VCC = 30 Vdc, VBE = +2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)

(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mA, IB2 = 15 mA)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

(BR)CEO
(BR)CBO
(BR)EBO

BEV
CEX

h

FE

V

CE(sat)

V

BE(sat)

T
cb
eb
ie
re
fe

oe

t

d

r

t

s

f

40 − Vdc
40 − Vdc

5.0 − Vdc

− 0.1 mAdc

− 0.1 mAdc

30

60
100
100

20

−

−

0.75

−

−

−

−

300

−

0.4

0.75

0.95

1.3

−

Vdc

Vdc

200 − MHz

− 8.5 pF

− 30 pF

1.5 k 15 k W

0.1 8.0 X 10
60 500 −

1.0 100 mmhos

− 15 ns

− 20 ns

− 225 ns

− 30 ns

−4

ORDERING INFORMATION

Device Package Shipping

2N4403 TO−92 5000 Units / Bulk
2N4403G TO−92

5000 Units / Bulk

(Pb−Free)
2N4403RLRA TO−92 2000 / Tape & Reel
2N4403RLRAG TO−92

2000 / Tape & Reel

(Pb−Free)
2N4403RLRM TO−92 2000 / Ammo Pack
2N4403RLRMG TO−92

2000 / Ammo Pack

(Pb−Free)
2N4403RLRPG TO−92

2000 / Ammo Pack

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

2N4403

TRANSIENT CHARACTERISTICS

SWITCHING TIME EQUIVALENT TEST CIRCUIT

+2 V

0

−16 V

30

20

10

7.0

5.0

CAPACITANCE (pF)

−30 V

< 2 ns

10 to 100 ms,
DUTY CYCLE = 2%

1.0 kW

200 W

+14 V

0

* < 10 pF

C

S

Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope

−16 V

< 20 ns

1.0 kW

1.0 to 100 ms,
DUTY CYCLE = 2%

+4.0 V

Figure 1. Turn−On Time Figure 2. Turn−Off Time

25°C 100°C

10

7.0

C

eb

C

cb

5.0

3.0

2.0

1.0

0.7

0.5

Q, CHARGE (nC)

0.3

0.2

Q

T

VCC = 30 V
IC/IB = 10

Q

A

−30 V

200 W

C

* < 10 pF

S

2.0

0.1 2.0 5.0 10 20

0.7 7.0

REVERSE VOLTAGE (VOLTS)

3.01.00.50.30.2

Figure 3. Capacitances

30

0.1
10 20 50 70 100 200

30

IC, COLLECTOR CURRENT (mA)

300 500

Figure 4. Charge Data

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3

2N4403

SMALL−SIGNAL CHARACTERISTICS

100

70

50

30

20

t, TIME (ns)

10

7.0

5.0
10 20 50 70 100 200 300 50030

tr @ VCC = 30 V
tr @ VCC = 10 V
td @ V
td @ V

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn−On Time

200

100

70

IC/IB = 10

= 2 V

BE(off)

= 0

BE(off)

100

70

50

30

20

, RISE TIME (ns)

r

t

10

7.0

5.0
10 20 50 70 100 200 300 50030

IC/IB = 20

VCC = 30 V
IC/IB = 10

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise Time

IC/IB = 10

10

8

6

4

NF, NOISE FIGURE (dB)

2

50

IB1 = I

, STORAGE TIME (ns)′

s

t

30

20

10 20 50 70 100 200 300 50030

B2

ts′ = ts − 1/8 t

f

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

NOISE FIGURE

V

= −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

CE

IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
IC = 100 mA, RS = 1.6 kW

RS = OPTIMUM SOURCE RESISTANCE

10

f = 1 kHz

8

6

4

NF, NOISE FIGURE (dB)

2

IC = 50 mA

100 mA
500 mA

1.0 mA

0

0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100

f, FREQUENCY (kHz)

Figure 8. Frequency Effects

0

50 100 200 500 1k 2k 5k 10k 20k 50k

RS, SOURCE RESISTANCE (OHMS)

Figure 9. Source Resistance Effects

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4

2N4403

h PARAMETERS

= −10 Vdc, f = 1.0 kHz, TA = 25°C

V

CE

This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. T o
obtain these curves, a high−gain and a low−gain unit were

1000

700

500

300

200

, CURRENT GAIN

100

fe

h

70

50

30

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

20

−4

10

5.0

2.0

1.0

0.5

0.2

re

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.1

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain

IC, COLLECTOR CURRENT (mAdc)

2N4403 UNIT 1
2N4403 UNIT 2

5.0 7.0

2N4403 UNIT 1
2N4403 UNIT 2

5.0 7.0

selected from the 2N4403 lines, and the same units were
used to develop the correspondingly−numbered curves on
each graph.

100k

50k

20k

10k

5k

2k

1k

, INPUT IMPEDANCE (OHMS)

500

ie

h

200

100

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0

IC, COLLECTOR CURRENT (mAdc)

Figure 11. Input Impedance

500

m

100

50

20

10

5.0

oe

h , OUTPUT ADMITTANCE ( mhos)

2.0

1.0

0.1 0.2 0.5 0.7 1.0 2.0 3.0

0.3 5.0 7.0

IC, COLLECTOR CURRENT (mAdc)

2N4403 UNIT 1
2N4403 UNIT 2

2N4403 UNIT 1
2N4403 UNIT 2

10

Figure 12. Voltage Feedback Ratio

Figure 13. Output Admittance

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5

2N4403

STATIC CHARACTERISTICS

3.0

2.0

1.0

0.7

0.5

0.3

FE

h , NORMALIZED CURRENT GAIN

0.2

0.1

1.0

0.8

0.6

0.4

VCE = 1.0 V
VCE = 10 V

0.5 2.0 3.0 10 50 700.2 0.3

IC = 1.0 mA

TJ = 125°C

IC, COLLECTOR CURRENT (mA)

Figure 14. DC Current Gain

10 mA 100 mA

25°C

−55°C

1001.00.7 50030205.0 7.0

200 300

500 mA

0.2

CE

V , COLLECTOR−EMITTER VOLTAGE (VOLTS)

0

0.005

1.0

0.8

0.6

0.4

VOLTAGE (VOLTS)

0.2

0.1 0.2 0.5

TJ = 25°C

0.1

0.070.050.030.020.01

Figure 15. Collector Saturation Region

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(sat)

V

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 16. “On” Voltages

500100

0.5 2.0 3.0 500.2 0.3

IB, BASE CURRENT (mA)

COEFFICIENT (mV/ C)°

200

500

1.00.7 5.0 7.0

0.5

0

0.5

1.0

1.5

2.0

2.5

0.1 0.2 0.5

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 17. Temperature Coefficients

qVC for V

qVS for V

10 20 30

CE(sat)

BE

50 100

200

500

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6

2N4403

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−11

ISSUE AM

SEATING
PLANE

R

T

SEATING
PLANE

A

B

STRAIGHT LEAD

BULK PACK

R

P

L

K

XX

H

V

1

G

C

N

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

N

A

B

P

K

XX

G

V

1

C

N

BENT LEAD

TAPE & REEL

AMMO PACK

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION:
MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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2N4403/D

7