Datasheet 2N4401-D Datasheet (ON Semiconductor)

2N4401

Preferred Device

General Purpose
Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base V oltage V
Collector Current − Continuous I
Total Device Dissipation

@ TA = 25°C
Derate above 25°C

Total Device Dissipation

@ TC = 25°C
Derate above 25°C

Operating and Storage Junction
Temperature Range

CEO
CBO
EBO

P

P

TJ, T

C

D

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R
Thermal Resistance, Junction−to−Case R

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

q

JA

q

JC

40 Vdc
60 Vdc

6.0 Vdc

600 mAdc

625

5.0

1.5
12

−55 to
+150

200 °C/W

83.3 °C/W

mW

mW/°C

mW/°C

W

°C

TO−92
CASE 29
STYLE 1

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COLLECTOR

3

2

BASE

1

EMITTER

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

2N

4401

AYWWG

G

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 3

1 Publication Order Number:

2N4401 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

2N4401/D

2N4401

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown V oltage (Note 1) (I

= 1.0 mAdc, IB = 0) V

C

Collector−Base Breakdown V oltage (IC = 0.1 mAdc, IE = 0) V
Emitter−Base Breakdown V oltage (IE = 0.1 mAdc, IC = 0) V
Base Cutoff Current (VCE = 35 Vdc, V

= 0.4 Vdc) I

EB

Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) I

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)

Collector−Emitter Saturation V oltage (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) f
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) C
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) h

SWITCHING CHARACTERISTICS

Delay Time
Rise Time t
Storage Time
Fall Time t

(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)

(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Symbol Min Max Unit

(BR)CEO
(BR)CBO
(BR)EBO

BEV
CEX

h

FE

V

CE(sat)

V

BE(sat)

T
cb
eb
ie
re
fe

oe

t

d

r

t

s

f

40 − Vdc
60 − Vdc

6.0 − Vdc

− 0.1 mAdc

− 0.1 mAdc

−
20
40
80

100

40

−

−

0.75

−

−

−

−

300

−

0.4

0.75

0.95

1.2

Vdc

Vdc

250 − MHz

− 6.5 pF

− 30 pF

1.0 15 k W

0.1 8.0 X 10
40 500 −

1.0 30 mmhos

− 15 ns

− 20 ns

− 225 ns

− 30 ns

−4

ORDERING INFORMATION

Device Package Shipping

2N4401 TO−92 5000 Units / Bulk
2N4401G TO−92

5000 Units / Bulk

(Pb−Free)
2N4401RLRA TO−92 2000 / Tape & Reel
2N4401RLRAG TO−92

2000 / Tape & Reel

(Pb−Free)
2N4401RLRMG TO−92

2000 / Ammo Pack

(Pb−Free)
2N4401RLRP TO−92 2000 / Ammo Pack
2N4401RLRPG TO−92

2000 / Ammo Pack

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

2N4401

TRANSIENT CHARACTERISTICS

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+16 V

0

−2.0 V

30

20

10

7.0

5.0

CAPACITANCE (pF)

3.0

+30 V

1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%

< 2.0 ns

1.0 kW

200 W

CS* < 10 pF

Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

0

−14 V

1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%

1.0 kW

< 20 ns

−4.0 V

Figure 1. Turn−On Time Figure 2. Turn−Off Time

25°C 100°C

10

7.0
VCC = 30 V

5.0
IC/IB = 10

C

obo

C

cb

3.0

2.0

1.0

0.7

0.5

Q, CHARGE (nC)

0.3

0.2

+30 V

200 W

C

* < 10 pF

S

Q

T

Q

A

2.0

0.1 2.0 5.0 10 20

REVERSE VOLTAGE (VOLTS)

3.01.00.50.30.2

Figure 3. Capacitances

100

70

50

30

20

t, TIME (ns)

10

7.0

5.0
10 20 50 70 100 200 300 50030

IC, COLLECTOR CURRENT (mA)

tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0

Figure 5. Turn−On Time

IC/IB = 10

30 50

0.1
10 20 50 70 100 200

30

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

100

70

50

30

20

t, TIME (ns)

10

7.0

5.0
10 20 50 70 100 200 300 50030

t

r

t

f

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise and Fall Times

300 500

VCC = 30 V
IC/IB = 10

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3

2N4401

SMALL−SIGNAL CHARACTERISTICS

300

200

100

70

, STORAGE TIME (ns)′

s

t

50

30

10 20 50 70 100 200 300 50030

10

8.0

6.0

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

IC = 1.0 mA, RS = 150 W
IC = 500 mA, RS = 200 W
IC = 100 mA, RS = 2.0 kW
IC = 50 mA, RS = 4.0 kW

100
ts′ = ts − 1/8 t
IB1 = I
IC/IB = 10 to 20

f

B2

70

50

30

20

, FALL TIME (ns)

f

t

10

7.0

5.0
10 20 50 70 100 200 300 50030

NOISE FIGURE

V

= 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

CE

10

f = 1.0 kHz

RS = OPTIMUM

RS = SOURCE
RS = RESISTANCE

8.0

6.0

IC/IB = 20

IC/IB = 10

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1.0 mA

VCC = 30 V
IB1 = I

B2

4.0

NF, NOISE FIGURE (dB)

2.0

0

0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100

f, FREQUENCY (kHz)

Figure 9. Frequency Effects

4.0

NF, NOISE FIGURE (dB)

2.0

0

Figure 10. Source Resistance Effects

100k50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k

RS, SOURCE RESISTANCE (OHMS)

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4

2N4401

h PARAMETERS

= 10 Vdc, f = 1.0 kHz, TA = 25°C

V

CE

This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. T o
obtain these curves, a high−gain and a low−gain unit were

300

200

100

70

, CURRENT GAIN

50

fe

h

30

20

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

2N4401 UNIT 1
2N4401 UNIT 2

5.0 7.0

selected from the 2N4401 lines, and the same units were
used to develop the correspondingly numbered curves on
each graph.

50k

2N4401 UNIT 1

20k

10k

5.0k

2.0k

, INPUT IMPEDANCE (OHMS)

ie

h

1.0k

500

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0

IC, COLLECTOR CURRENT (mA)

Figure 12. Input Impedance

2N4401 UNIT 2

10

−4

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

re

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.2

0.1 0.2 0.5 0.7 1.0

0.3

IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio

2N4401 UNIT 1
2N4401 UNIT 2

2.0 3.0 10

5.0 7.0

100

50

m

20

10

5.0

2.0

oe

h , OUTPUT ADMITTANCE ( mhos)

1.0

0.1 0.2 0.5 0.7 1.0

0.3

IC, COLLECTOR CURRENT (mA)

Figure 14. Output Admittance

2N4401 UNIT 1
2N4401 UNIT 2

2.0 3.0 10

5.0 7.0

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5

3.0

2.0

2N4401

STATIC CHARACTERISTICS

VCE = 1.0 V
VCE = 10 V

TJ = 125°C

1.0

0.7

0.5

0.3

FE

h , NORMALIZED CURRENT GAIN

0.2

1.0

0.8

0.6

0.4

0.2

0.1

IC = 1.0 mA

0.5 2.0 3.0 10 50 700.2 0.3

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

10 mA 100 mA

1001.00.7 50030205.0 7.0

200 300

TJ = 25°C

500 mA

CE

V , COLLECTOR−EMITTER VOLTAGE (VOLTS)

0

1.0

0.8

0.6

0.4

VOLTAGE (VOLTS)

0.2

0.1 0.2 0.5

TJ = 25°C

0.070.050.030.020.01

V

BE(sat)

VBE @ VCE = 10 V

V

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 17. “On” Voltages

0.1

0.5 2.0 3.0 500.2 0.3

IB, BASE CURRENT (mA)

1.00.7 5.0 7.0

Figure 16. Collector Saturation Region

+0.5

@ IC/IB = 10

−0.5

−1.0

−1.5

COEFFICIENT (mV/ C)°

−2.0

500100

200

500

−2.5

0

0.1 0.2 0.5

Figure 18. Temperature Coefficients

10 20 30

qVC for V

CE(sat)

qVB for V

BE

1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)

50 100 500200

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6

2N4401

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−11

ISSUE AM

SEATING
PLANE

R

T

SEATING
PLANE

A

B

STRAIGHT LEAD

BULK PACK

R

P

L

K

XX

V

1

G

H

C

N

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66

J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

N

A

B

P

K

XX

G

V

1

C

N

BENT LEAD

TAPE & REEL

AMMO PACK

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION:
MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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2N4401/D

7