Page 1
2N4400 / MMBT4400
MMBT4400
C
SOT-23
Mark: 83
B
E
C
B
E
2N4400
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous600 mA
Operating and Storage Junction Temperature Range -55 to +150
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4400 *MMBT4400
P
D
R
θ
JC
R
θ
JA
2001 Fairchild Semiconductor Corporation
Total Device Dissipa tion
Derate above 25°C
Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
625
5.0
350
2.8
mW
mW/°C
C/W
°
C/W
°
2N4400/MMBT4400, Rev A
Page 2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 100 µA, IC = 0
E
60 V
6.0 V
Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1
Emitter Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1
DC Current Gain VCE = 1.0 V, IC = 1.0 mA
V
= 1.0 V, IC = 10 mA
CE
V
= 1.0 V, IC = 150 mA
CE
V
= 2.0 V, IC = 500 mA
Collector-Emitte r Saturation Voltage IC = 150 mA, IB =15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB =15 mA
)
CE
I
= 500 mA, IB = 50 mA
C
I
= 500 mA, IB = 50 mA
C
20
40
50
20
0.75 0.95
150
0.40
0.75
1.2
A
µ
A
µ
V
V
V
V
2N4400 / MMBT4400
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
ie
h
re
h
oe
Output Capacitance VCB = 5.0 V, f = 140 kHz 6.5 pF
Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF
Small-Si gnal Curre nt Gain IC = 20 mA, VCE = 10 V,
Small-Si gnal Curre nt Gain VCE = 10 V, IC = 1.0 mA, 20 250
Input Impedance f = 1.0 kHz 0.5 7.5
Voltage Feedback Ratio 0.1 8.0
Output Admittance 1.0 30
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay TimeVCC = 30 V, IC = 150 mA,15ns
Rise Time IB1 = 15 mA ,V
Storage Time VCC = 30 V, IC = 150 mA 225 ns
Fall Time IB1 = IB2 = 15 mA 30 ns
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
f = 100 MHz
EB
= 2 V
2.0
20
x 10
mhos
µ
K
ns
Ω
-4
Page 3
T ypical Characteristics
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
200
25 °C
100
FE
h - TYPICAL PULSED CURRENT GAIN
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I - COLLECTOR CURRENT (mA)
C
Base- Emitter Saturation
Voltag e vs Coll ector Cu rrent
β = 10
1
- 40 °C
0.8
0.6
0.4
BESAT
V - BASE-E MITTER VOLTAGE (V)
1 10 100 500
25 °C
125 °C
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collecto r-Em itt er Sa tu rat io n
Voltage vs Collector Current
0.4
= 10
0.3
0.2
0.1
CES AT
V - COLLEC TOR-EMI TTER VOLT A GE (V )
β
125 °C
25 °C
- 40 °C
110100500
I - COLLEC TO R CU RRENT (mA)
C
Base-Emitter ON Voltage vs
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
0.1 1 10 25
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs Ambient Temperature
500
V = 40V
100
CB
10
1
0.1
CBO
I - COLLECTOR CURRENT ( n A)
25 50 75 100 125 150
T - AMBIENT TE MPERATU RE ( C)
A
°
Emitter Transition and Output
Capacitance vs Reverse Bias V oltage
20
16
12
8
CAPACITANCE (pF)
4
C
ob
0.1 1 10 100
RE VERSE BIAS VOLTAGE (V)
C
te
f = 1 MHz
Page 4
Typical Characteristics (continued)
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
T urn On and Turn Off Times
vs Collector Current
400
I = I =
320
V = 25 V
240
160
TIME (nS)
80
0
10 100 1000
I
B1
c
B2
10
cc
t
on
I - COLLECTOR CURRENT (mA)
C
1
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
TO-92
SOT-23
400
320
240
160
t
off
TIME (nS)
80
0
10 100 1000
Power Dissipation vs
Ambient Temp erature
SOT-223
TEMPERATURE ( C)
o
Swit ching Times
vs Collector Current
I
I = I =
B1CB2
V = 25 V
cc
c
10
t
s
t
r
t
f
t
d
I - COLLECTOR CURRENT (mA)
Page 5
NPN General Purpose Amplifier
Typical Common Emitter Characteristics (f = 1.0kHz)
2N4400 / MMBT4400
(continued)
Common Emitter Characteristics
8
V = 10 V
CE
o
T = 25 C
C
A
6
h
oe
4
h
re
2
h
0
0 102030405060
CHAR. RELATIVE TO VALUES AT I = 10mA
ie
I - COLLECTOR CURRENT (mA)
C
h
fe
Common Emitter Characteristics
1.3
1.25
CE
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0 5 10 15 20 25 30 35
CHAR. RELATIVE TO VALUES AT V = 10V
I = 10 mA
C
T = 25 C
A
V - COLLECTOR VOLTAGE (V)
CE
Common Emi tte r Charact eristics
o
2.4
V = 10 V
CE
A
2
1.6
1.2
I = 10 mA
C
h
re
h
ie
h
fe
h
oe
0.8
0.4
0
0 20406080100
CHAR. RELATIVE TO VALUES AT T = 25 C
T - AMBI ENT TEMPERATURE ( C)
A
o
h
fe
h
ie
h
re
h
oe
o
Page 6
T est Circuits
NPN General Purpose Amplifier
(continued)
30 V
ΩΩ
200
Ω
ΩΩ
2N4400 / MMBT4400
16 V
0
≤≤
≤ 200ns
≤≤
500
ΩΩ
Ω
ΩΩ
1.0 K
ΩΩ
Ω
ΩΩ
FIGURE 1: Saturated Turn-On Switching Timer
- 1.5 V
NOTE: BV = 5.0 V
EBO
30 V
0
≤≤
≤ 200ns
≤≤
50
ΩΩ
Ω
ΩΩ
1.0 K
ΩΩ
Ω
ΩΩ
1k
6.0 V
37
ΩΩ
Ω
ΩΩ
FIGURE 2: Saturated Turn-Off Switching Time
Page 7
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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TM
FACT™
FACT Quiet Series™
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FASTr™
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GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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