Page 1
2N4126 MMBT4126
g
A
C
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to
100 mA as an amplifier.
TO-92
C
SOT-23
Mark: ZF
2N4126 / MMBT4126
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
st
Collector-Emitter Voltage 25 V
Collector-Base Voltage 25 V
Emitter-Base Voltage 4.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4126 *MMBT4126
P
D
R
θ
JC
R
θ
J
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
mW
mW/°C
C/W
°
C/W
°
2001 Fairchild Semiconductor Corporation
2N4126/MMBT4126, Rev A
Page 2
(BR)
(BR)
(BR)
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE(sat)
V
BE(sat)
SMALL SIGNAL CHARACTERISTICS
f
T
C
ibo
C
cb
h
fe
NF Noise Figure
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
= 10 µA, IC = 0
I
C
Collector Cutoff Current VCB = 20 V, I
= 0 50 nA
E
25 V
4.0 V
Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
DC Current Gain IC = 2.0 mA, VCE = 1.0 V
= 50 mA, VCE = 1.0 V
I
C
120
60
360
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.4 V
Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
250 MHz
f = 100 MHz
Input Capacitance VEB = 0.5 V, IC = 0,
10 pF
f = 1.0 MHz
Collector-Base Capcitance VCB = 5.0 V, IE = 0,
4.5 pF
f = 100 kHz
Small-Signal Current Gain IC = 2.0 mA, VCE = 10 V,
120 480
f = 1.0 kHz
I
= 100 µA, VCE = 5.0 V,
C
=1.0 kΩ, f=10 Hz to 15.7 kHz
R
S
4.0 dB
2N4126 / MMBT4126
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Page 3
T ypical Characteristics
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Typical Pulsed Curren t Gain
vs Colle c t or C urre nt
250
125 °C
25 °C
- 40 °C
50
0.1 0.2 0.5 1 2 5 10 20 50 100
I - COLLECTOR CURRENT (mA)
C
h - TYPICAL PULSED CU RRENT GAIN
200
150
100
FE
V = 1.0 V
CE
Base-Em itter Sa turati o n
Voltag e vs Coll ector Cur re nt
β
= 10
1
0.8
0.6
0.4
0.2
- 40 °C
25 °C
125 °C
C olle c t or-E mitt e r S atura t io n
Volt a ge vs Colle ctor Current
CESAT
V - COLLECTOR EMITTE R VOLTAGE (V)
0.3
0.25
0.2
0.15
0.1
0.05
= 10
β
25 °C
125°C
- 40 °C
0
110100200
I - COLLECTOR CURRENT (mA)
C
Base Emitter O N Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
- 40 °C
25 °C
125 °C
V = 1V
CE
BE SAT
0
V - BA SE EMITTER VOLTAGE (V)
110100200
I - COLLECTOR CURRENT (mA)
C
Co llect or-Cu to ff Current
vs Amb ie nt Tem p er atu re
100
V = 25V
CB
10
1
0.1
CBO
I - C OL LE CTO R CURR ENT ( n A)
0.01
25 50 75 100 125
T - A MBIE NT T E MP ER AT UR E ( C)
A
°
0
BE(ON)
0.1 1 10 25
V - BASE EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRE NT (mA)
C
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltag e
10
8
6
4
2
CAPACITANCE (pF)
0
0.1 1 10
C
obo
REVERSE BIAS VOLTAGE (V)
C
ibo
Page 4
Typical Characteristics (continued)
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
Noise Figure vs Frequency
6
5
4
3
2
NF - NOIS E FIGURE ( d B)
1
0
0.1 1 10 100
f - FREQUENCY (kHz)
V = 5.0V
CE
I = 100 µA, R = 200
C
I = 1.0 mA, R = 200
C
I = 100 µA, R = 2.0 k
C
S
S
S
Switching Times
vs Collector Curren t
500
t
100
TIME (nS)
10
I = I =
B1CB2
1
1 10 100
I
c
10
I - COLLECTOR CURRENT (mA)
s
t
f
t
r
t
d
Nois e F igure vs Source Resistan ce
12
10
I = 1.0 mA
8
Ω
Ω
Ω
6
4
NF - NOISE FIGURE (dB)
2
0
0.1 1 10 100
C
R - SOURCE RESISTANCE ( )
S
V = 5.0V
CE
f = 1.0 kHz
I = 100 µA
C
k
Ω
Turn On and Turn Off Times
vs Collector Current
500
t
t
off
on
100
I
I =
B1
BE(OFF)
I = I =
B1 B2
c
10
I
c
10
t
on
V = 0.5V
TIME (nS)
10
t
off
1
1 10 100
I - COLLE CTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
0.5
SOT-23
0.25
D
P - POWER D ISSIPATION (W)
0
0 25 50 75 100 125 150
SOT-223
TEMPERATURE ( C)
o
Page 5
Typical Characteristics (continued)
2N4126 / MMBT4126
PNP General Purpose Amplifier
(continued)
4
_
100
re
h - VOLTAGE FEEDBACK RATIO (x10 )
Voltage Feedback Ratio
10
1
0.1 1 10
I - COLLECTOR CURRENT (mA)
C
Output Admi tta n ce
1000
µ
100
oe
h - OUTPUT ADMITTANCE ( mhos)
10
0.1 1 10
I - COL LECTO R CURRENT (mA)
C
V = 10 V
CE
f = 1.0 kHz
Input Im pedanc e
10
Ω
1
ie
h - INPUT IMPEDANCE (k )
0.1
0.1 1 10
I - COLLECT OR CURR ENT (mA)
C
V = 10 V
CE
f = 1.0 kHz
Current Gain
1000
500
200
100
50
fe
h - CURRENT GAIN
20
10
0.1 1 10
I - COLLECTOR CURRENT (mA)
C
V = 10 V
CE
f = 1.0 kHz
Page 6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
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RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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