Datasheet 2N4123, 2N4124 Datasheet (ON Semiconductor)

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Page 1

2N4123, 2N4124

General Purpose Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector− Emitter Voltage

2N4123 2N4124

Collector− Base Voltage

2N4123 2N4124

Emitter− Base Voltage V

Collector Current − Continuous I

Total Device Dissipation @ TA = 25°C Derate above 25°C

Total Device Dissipation @ TC = 25°C Derate above 25°C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R

Thermal Resistance, Junction−to−Case R

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

CEO

CBO

EBO

TJ, T

−55 to +150 °C

stg

30 25

40 30

5.0 Vdc

200 mAdc

625

5.0

1.5 12

200 °C/W

83.3 °C/W

Vdc

mW/°C

TO−92 CASE 29 STYLE 1

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COLLECTOR

BASE

EMITTER

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

412x

AYWW G

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

November, 2008 − Rev. 4

1 Publication Order Number:

x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

2N4123RLRM TO−92 2000 / Tape & Ammo

2N4124G TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

5000 Units / Bulk

†

2N4123/D

Page 2

2N4123, 2N4124

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IE = 0) 2N4123

Collector− Base Breakdown Voltage

(IC = 10 mAdc, IE = 0) 2N4123

Emitter− Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 2.0 mAdc, VCE = 1.0 Vdc) 2N4123

(IC = 50 mAdc, VCE = 1.0 Vdc) 2N4123

Collector− Emitter Saturation Voltage (Note 1)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base−Emitter Saturation Voltage (Note 1)

(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current− Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Collector−Base Capacitance

(IE = 0, VCB = 5.0 V, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) 2N4123

Current Gain − High Frequency

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123

2N4124

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

CE(sat )

BE(sat)

|hfe|

ibo

30 25

−

Vdc

40 30

−

Vdc

5.0 −

nAdc

− 50

nAdc

− 50

−

120

25 60

150 360

−

Vdc

− 0.3

Vdc

− 0.95

250 300

−

MHz

− 8.0

− 4.0

120

200 480

−

2.5

3.0

−

(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4123 (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) 2N4124

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 2N4123

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

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2N4124

120

−

200 480

6.0

5.0

Page 3

2N4123, 2N4124

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

0.2 0.3 0.5 0.7

NF, NOISE FIGURE (dB)

SOURCE RESISTANCE = 200 W IC = 1 mA

SOURCE RESISTANCE = 500 W IC = 100 mA

0.1

ibo

obo

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOLTAGE (VOLTS)

Figure 1. Capacitance

AUDIO SMALL−SIGNAL CHARACTERISTICS

SOURCE RESISTANCE = 200 W IC = 0.5 mA

SOURCE RESISTANCE = 1 kW IC = 50 mA

12 4 1020400.2 0.4

f, FREQUENCY (kHz)

TIME (ns)

30 40

NOISE FIGURE

= 5 Vdc, TA = 25°C)

Bandwidth = 1.0 Hz

100

200

100

10.0

7.0

5.0

70 50

1.0

VCC = 3 V IC/IB = 10 V

EB(off)

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

= 0.5 V

IC, COLLECTOR CURRENT (mA)

Figure 2. Switching Times

f = 1 kHz

NF, NOISE FIGURE (dB)

0.1 1.0 2.0 4.0 10 20 400.2 0.4 100

IC = 1 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

RS, SOURCE RESISTANCE (kW)

Figure 3. Frequency Variations

Figure 4. Source Resistance

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2N4123, 2N4124

h PARAMETERS

(VCE = 10 V, f = 1 kHz, TA = 25°C)

300

200

100

, CURRENT GAIN

0.1 0.2 1.0 2.0

0.5

IC, COLLECTOR CURRENT (mA)

Figure 5. Current Gain

5.0

2.0

5.0 10

100

h , OUTPUT ADMITTANCE ( mhos)

0.1 0.2 1.0 2.0

0.5

IC, COLLECTOR CURRENT (mA)

Figure 6. Output Admittance

-4

7.0

5.0

3.0

2.0

5.0 10

1.0

, INPUT IMPEDANCE (k )Ω

0.5

0.2

0.1 0.2 1.0 2.0 5.0 100.5 IC, COLLECTOR CURRENT (mA)

Figure 7. Input Impedance

2.0

1.0

0.7

0.5

0.3

0.2

h , DC CURRENT GAIN (NORMALIZED)

0.1

0.5 2.0 3.0 10 50 700.2 0.3

1.0

0.7

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.5

0.1 0.2 1.0 2.0 5.0

STATIC CHARACTERISTICS

TJ = +125°C

+25°C

-55°C

IC, COLLECTOR CURRENT (mA)

100.5

IC, COLLECTOR CURRENT (mA)

Figure 8. Voltage Feedback Ratio

VCE = 1 V

1001.00.7 20030205.0 7.0

Figure 9. DC Current Gain

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Page 5

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

2N4123, 2N4124

TJ = 25°C

IC = 1 mA

10 mA

0.1

0.070.050.030.020.01

IB, BASE CURRENT (mA)

Figure 10. Collector Saturation Region

30 mA 100 mA

0.5 2.0 3.0 100.2 0.3

1.00.7 5.0 7.0

1.2 TJ = 25°C

1.0

0.8

0.6

0.4

V, VOLTAGE (VOLTS)

0.2

1.0 2.0 5.0 10 20 500100

IC, COLLECTOR CURRENT (mA)

CE(sat)

@ IC/IB = 10

BE(sat)

VBE @ VCE = 1 V

@ IC/IB = 10

Figure 11. “On” Voltages

200

1.0

0.5

qVC for V

-0.5

-1.0

-1.5

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

-2.0 0 60 80 120 140 160 18020 40 100 200

qVB for V

CE(sat)

BE(sat)

IC, COLLECTOR CURRENT (mA)

+25°C to +125°C

-55°C to +25°C

+25°C to +125°C

Figure 12. Temperature Coefficients

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Page 6

2N4123, 2N4124

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

SEATING PLANE

STRAIGHT LEAD

BULK PACK

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 R 0.115 --- 2.93 --- V 0.135 --- 3.43 ---

MILLIMETERSINCHES

BENT LEAD

TAPE & REEL

AMMO PACK

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54

G 2.40 2.80

J 0.39 0.50 K 12.70 --- N 2.04 2.66 P 1.50 4.00 R 2.93 --- V 3.43 ---

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2N4123/D