Datasheet 2n4003k Datasheet

N-Channel Enhancement

DRAIN

3

2N4003K

Mode Power MOSFET

P b

Lead(Pb)-Free

Features:

* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V.

Application:

* Level Shifters * Level Switches * Low Side Load Switches * Portable Applications

Maximum Ratings

(TA=25℃ Unless Otherwise Specified)

Rating Symbol Value Unit

1

GATE

* Gate Pretection Diode

*

SOURCE

DRAIN CURRENT

0.5 AMPERES

DRAIN SOUCE VOLTAGE

30 VOLTAGE

2

3

1

2

SOT-23

Drain-Source Voltage

Gate-Source Voltage

1

Continuous Drain Current

Power Dissipation

Continuous Drain Current

Power Dissipation

Pulsed Drain Current

Maximum Junction-ambient

Operating Junction Temperature Range

Storage Temperature Range

Source Current (Body Diode)

1

,Steady State

1

,t<10s

,t<5s

(TA=25°C)

(TA=85°C)

(TA=25°C)

(TA=85°C)

1

,t<10s ,Steady State

V

DS

V

GS

I

D

P

D

I

D

P

D

I

DM

1

R

T

θJA

T

stg

I

S

J

2

30

±20

0.5

0.37

0.69 W

0.56

0.40

0.83 W

1.7

180,Steady State 150 300

+150

-55~+150

1.0 A

V

A

°C/W

°C

Lead Temperature for Soldering Purposes (1/8” from case 10s)

Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

T

L

260 °C

Device Marking

2N4003K = TR8

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2N4003K

Electrical Characteristics

Characteristic Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

VGS=0, I

Gate-Source Threshold Voltage3

V

DS=VGS

Gate-Source Leakage Current

VGS= ±10V

Zero Gate Voltage Drain Current (T V

DS

Drain-Source On-Resistance

V

GS

V

GS

Forward Transconductance3

VDS=3.0V,ID=10mA

=100

D

, ID=250

=30V,VGS=0

=2.5V,ID= 10mA

=4.0V,ID=10mA

A

=25˚C)

J

3

(T =25°C Unless otherwise noted)

A

V

(BR)DSS

V

GS(Th)

I

GSS

I

DSS

R

DS(on)

g

fs

30

0.8

- -

-

- 0.33 - S

-

1.5

1.0

-

1.6

±1.0

1

2.0

1.5

V

Ω

Dynamic

Input Capacitance VGS=0V, VDS=5.0V, f=1.0MHz

Output Capacitance VGS=0V, VDS=5.0V, f=1.0MHz

Reverse Transfer Capacitance VGS=0V, VDS=5.0V, f=1.0MHz

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Ciss

Coss

Crss

- -

-

21

19.7

8.1

-

pF

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2N4003K

Switching

Turn-on Delay Time

VGS=4.5V, VDD=5.0V,I

Rise Time

4

VGS=4.5V, VDD=5.0V,ID=0.1A, RG=50Ω

4

=0.1A, RG=50Ω

D

4

td(on)

t

r

t

d

- 16.7

- 47.9

-

ns

)

- 65.1

-

Fall Time

4

VGS=4.5V, VDD=5.0V,ID=0.1A, RG=50Ω

Total Gate Charge

V

GS

=5.0V,

VDS=24V, I

=0.1A

D

Threshold Gate Charge

V

GS

=5.0V,

VDS=24V, I

=0.1A

D

Gate-Source Charge

V

GS

=5.0V,

VDS=24V, I

=0.1A

D

Gate-Drain Change

V

GS

=5.0V,

VDS=24V, I

=0.1A

D

Source-Drain Diode Characteristics

Forward On Voltage

V

=0V, IS=10mA

GS

TJ= 25°C TJ= 125°C

Q

V

t

Q

g(TH)

Q

gs

Q

gd

SD

f

g

-

64.2

1.15

0.15 -

-

nC

- 0.32

-

0.23

0.65

0.45

0.7

-

V

Reverse Recovery Time

t

V

=0V, IS=10mA, dls/dt=8A/μs

GS

rr

Note : 3. Pulse Test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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14

-

nS

0

2N4003K

TYPICAL PERFORMANCE CURVES

1.6 VGS = 10 V to 5 V

1.2

0.8

DRAIN CURRENT (A)

0.4

D,

I

0

10

0

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

Figure 1. On Region Characteristics

8

6

1

(TJ = 25°C unless otherwise noted)

4.5 V

4 V

3.5 V

2.5 V

ID = 0.2 A

DRAIN CURRENT (A)

D,

I

2

0.8

0.6

1.6

1.2

0.8

0.4

0

1

VDS≥ 10 V

0

VGS = 10 V

TJ = −55°C

TJ = 25°C

TJ = 125°C

2

VGS, GATE TO SOURCE VOLTAGE (V)

3

41

Figure 2. Transfer Characteristics

TJ = 125°C

5

4

2

DRAIN−TO−SOURCE RESISTANCE ( )

0

2.4 2.8 3.2 3.6 4

DS(on),

R

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On Resistance vs. Gate to Source Voltage

1.80 ID = 0.3 A

V

1.60

1.40

1.20

1.00

(NORMALIZED)

0.80

DRAIN−TO−SOURCE RESISTANCE ( )

0.60

DS(on),

R

= 4.5 V

GS

−50 0−25 25 TJ, JUNCTION TEMPERATURE (°C)

50 125100

75 150

Figure 5. On Resistance Variation with Temperature

0.4

0.2

DRAIN−TO−SOURCE RESISTANCE ( )

0

DS(on),

R

0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = −55°C

Figure 4. On Resistance vs. Drain Current and

Temperature

1000

VGS = 0 V

TJ = 150°C

100

, LEAKAGE (nA)

DSS

I

10

5

V

DRAIN TO SOURCE VOLTAGE (VOLTS)

DS,

10

TJ = 125°C

15

20

25

Figure 6. Drain to Source Leakage Current vs. Voltage

30

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2N4003K

.2

50

40

30

20

C, CAPACITANCE (pF)

10

0

0 8

4

DRAIN TO SOURCE VOLTAGE (V)

0.1

12

1

TJ = 25°C V

= 0 V

GS

16

VGS = 0 V

5

)

TJ = 25°C

= 0.1 A

I

D

4

3

C

iss

C

oss

C

rss

20

2

1

GATE−TO−SOURCE VOLTAGE (V

GS,

0

V

0

, TOTAL GATE CHARGE (nC)

Q

G

0.8

14.0

ecruoS ot niarD & ecruoS ot etaG .8 erugiFnoitairaV ecnaticapaC .7 erugiF

Voltage vs. Total Charge

0.01

, SOURCE CURRENT (A)

S

I

0.001

TJ = 150°C

, SOURCE−TO−DRAIN VOLTAGE (V)

V

SD

Figure 9. Diode Forward Voltage vs. Current

TJ = 25°C

6.04.0

0.8

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2N4003K

SOT-23 Outline Dimension

A

B

TOP VIEW

D

E

G

H

C

K

L

J

Unit:mm

SOT

-23

Dim

A

B C D

E G H

J

K

M

L

M

Min

0.35

1.19

2.10

0.85

0.46

1.70

2.70

0.01

0.89

0.30

0.076

Max

0.51

1.40

3.00

1.05

1.00

2.10

3.10

0.13

1.10

0.61

0.25

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