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120101
TECHNICAL DATA
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
Devices Qualified Level
2N3996 2N3997 2N3998 2N3999
MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current I
Collector Current
Total Power Dissipation @ TA = +250C
@ TC = +1000C
Operating & Storage Junction Temperature Range
(2)
(3)
V
CEO
V
CBO
V
EBO
B
IC
PT
T
T
,
J
stg
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
1) This value applies for tp ≤ 1.0 ms, duty cycle ≤ 50%
2) Derate linearly 11.4 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC > +1000C
R
θJC
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 µAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 0
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 8.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
80 Vdc
100 Vdc
8.0 Vdc
0.5 Adc
5.0
(1)
10
2.0
30
-65 to +200 0C
3.33
V
(BR)
CEO
V
(BR)
CBO
I
CEO
I
CES
I
EBO
Adc
W
0
C/W
*See appendix A for
package outline
80 Vdc
100 Vdc
10
200
JAN
JANTX
JANTXV
TO-111*
200
10
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µAdc
ηAdc
ηAdc
µAdc
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120101
2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
= 50 mAdc, V
C
I
= 1.0 Adc, V
C
I
= 5.0 Adc, V
C
= 2.0 Vdc 2N3996, 2N3998
CE
= 2.0 Vdc
CE
= 5.0 Vdc
CE
I
= 50 mAdc, V
C
I
= 1.0 Adc, V
C
I
= 5.0 Adc, V
C
= 2.0 Vdc 2N3997, 2N3999
CE
= 2.0 Vdc
CE
= 5.0 Vdc
CE
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 5.0 Adc, IB = 0.5 Adc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 5.0 Adc, IB = 0.5 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
= 1.0 Adc, V
C
= 5.0 Vdc, f = 10 MHz
CE
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = 1000C, 1 Cycle, t = 1.0 s
Test 1
VCE = 80 Vdc, IC = 0.08 Adc
Test 2
VCE = 20 Vdc, IC = 1.5 Adc
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
V
V
h
C
hFE
CE(sat)
BE(sat)
fe
obo
30
40
15
60
80
120
240
20
0.25
Vdc
2.0
0.6
1.2
Vdc
1.6
3.0
12
150
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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