Page 1
2003. 12. 12 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N3906V
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.), IBL=-50nA(Max.)
@V
CE
=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @VCB=-5V.
Complementary to 2N3904V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
E
B
A
G
H
K
C
1. EMITTER
2. BASE
3. COLLECTOR
2
1
P
P
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
K 0.2 0.05
P
_
1.2 0.05
+
_
0.8 0.05
+
_
0.5 0.05
+
_
0.3 0.05
+
_
1.2 0.05
+
_
0.8 0.05
+
0.40
_
0.12 0.05
J
+
_
+
5
VSM
Marking
Type Name
Z A
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2003. 12. 12 2/4Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=-30V, VEB=-3V
- - -50 nA
Base Cut-off Current
I
BL
VCE=-30V, VEB=-3V
- - -50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-40 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEOIC
=-1mA, IB=0
-40 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5.0 - - V
DC Current Gain *
hFE(1) VCE=-1V, IC=-0.1mA
60 - -
hFE(2) VCE=-1V, IC=-1mA
80 - -
hFE(3) VCE=-1V, IC=-10mA
100 - 300
hFE(4) VCE=-1V, IC=-50mA
60 - -
hFE(5) VCE=-1V, IC=-100mA
30 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=-10mA, IB=-1mA
- - -0.25
V
V
CE(sat)
2 IC=-50mA, IB=-5mA
- - -0.4
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=-10mA, IB=-1mA
-0.65 - -0.85
V
V
BE(sat)
2 IC=-50mA, IB=-5mA
- - -0.95
Transition Frequency
f
T
VCE=-20V, IC=-10mA, f=100MHz
250 - - MHz
Collector Output Capacitance
C
ob
VCB=-5V, IE=0, f=1MHz
- - 4.5 pF
Input Capacitance
C
ib
VBE=-0.5V, IC=0, f=1MHz
- - 10 pF
Input Impedance
h
ie
VCE=-10V, IC=-1mA, f=1kHz
2.0 - 12
k
Voltage Feedback Ratio
h
re
1.0 - 10 x10
-4
Small-Signal Current Gain
h
fe
100 - 400
Collector Output Admittance
h
oe
3.0 - 60
Noise Figure NF
VCE=-5V, IC=-0.1mA,
Rg=1k , f=10Hz 15.7kHz
- - 4.0 dB
Switching Time
Delay Time
t
d
- - 35
nS
Rise Time
t
r
- - 35
Storage Time
t
stg
- - 225
Fall Time
t
f
- - 75
2N3906V
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
V
in
10kΩ
275Ω
V
C
Total 4pF
out
0.5V
-10.6V
V
in
9.1V
-10.9V
or equiv.
300ns
10kΩ
1N916
20µs
0
t ,t < 1ns, Du=2%
r
0
t ,t < 1ns, Du=2%
rf
V =-3.0V
CC
f
V
C
Total 4pF
275Ω
V =-3.0V
CC
out
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2003. 12. 12 3/4
2N3906V
Revision No : 0
I - V
-100
-1
-80
C
-60
-40
-20
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
-1 -2 -3 -4
CEC
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
I =-0.1mA
B
COMMON EMITTER
Ta=25 C
CE
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
-1
COMMON EMITTER
I /I =10
C
-0.5
B
-0.3
h - I
FE C
Ta=125 C
Ta=25 C
Ta=-55 C
-3-1-0.3-0.1
V - I
CE(sat) C
COMMON EMITTER
V =-1V
CE
-10 -30 -100 -300
C
I - V
-200
COMMON EMITTER
V =-1V
-80
-40
CE
Ta=125 C
0
0
-0.4 -0.8 -1.2 -1.6
BASE-EMITTER VOLTAGE V (V)
-160
C
-120
COLLECTOR CURRENT I (mA)
C
Ta=25
BEC
C
Ta=-55
BE
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-0.1 -0.3 -1
Ta=125 C
-3 -10 -30 -100
COLLECTOR CURRENT I (mA)
V - I
BE(sat) C
-10
-5
-3
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
Ta=-55 C
Ta=25 C
Ta=125 C
BASE-EMITTER SATURATION
-0.1
-0.3 -1 -3 -10
-0.1
COLLECTOR CURRENT I (mA)
Ta=25 C
Ta=-55 C
C
COMMON EMITTER
I /I =10
C E
-30 -100 -300
C
-300
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2003. 12. 12 4/4
2N3906V
Revision No : 0
CE
-1.0
-0.8
-0.6
-0.4
C
I =1mA
CE B
C
I =30mA
I =10mA
C - V , C - VV - I
ob CB ib EB
50
30
ob
ib
10
C
C
I =100mA
C (pF)
5
C
ob
C
ib
3
f=1MHz
Ta=25 C
-0.2
COMMON
EMITTER
Ta=25 C
0
COLLECTOR-EMITTER VOLTAGE V (V)
-0.001 -0.1 -1 -10
-0.01
BASE CURRENT I (mA)
CAPACITANCE C (pF)
1
0.5
-3-1-0.3-0.1
B
REVERSE VOLTAGE V (V)
-10 -30
CB
V (V)
EB
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