Page 1
®
SMALL SIGNAL PNP TRANSISTOR
Ordering Code Marking Package / Shipment
2N3906 2N3906 TO-92 / Bulk
2N3906-AP 2N3906 TO-92 / Ammopack
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTOR
■ TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
■ THE NPN COMPLE M ENT A RY T YP E IS
2N3904
APPLICATIONS
■ WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
2N3906
PRELIMINARY DATA
TO-92
Bulk
INTER NAL SCH E M ATI C DIAG RA M
TO-92
Ammopack
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
February 2003
Collector-Base Voltage (IE = 0) -60 V
CBO
Collector-Emitter Voltage (IB = 0) -40 V
CEO
Emitter-Base Voltage (IC = 0) -6 V
EBO
I
Collector Current -200 mA
C
Total Dissipation at TC = 25 oC 625 mW
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/5
Page 2
2N3906
THERMAL DATA
R
R
thj-amb
thj-Case
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Case Max
200
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
V
(BR)CEO
Collector Cut-off
Current (V
= 3 V)
BE
Base Cut-off Current
(V
= 3 V)
BE
∗ Collector-Emitter
= -30 V -50 nA
V
CE
= -30 V -50 nA
V
CE
I
= -1 mA -40 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -10 µ A
I
C
-60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -10 µ A
I
E
-6 V
Breakdown Voltage
(I
= 0)
C
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain I C = -0.1 mA VCE = -1 V
FE
f
Transition Frequency IC = -10mA VCE = -20 V f = 100 MHz 250 MHz
T
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA
C
IC = -10 mA IB = -1 mA
I
= -50 mA IB = -5 mA -0.65
C
I
= -1 mA VCE = -1 V
C
I
= -10 mA VCE = -1 V
C
I
= -50 mA VCE = -1 V
C
I
= -100 mA VCE = -1 V
C
NF Noise Figure VCE = -5 V IC = -0.1 mA f = 10 Hz
60
80
100
60
30
-0.25
-0.4
-0.85
-0.95
300
4d B
to 15.7 KHz RG = 1 KΩ
C
CBO
Collector-Base
IE = 0 VCB = -5 V f = 100 KHz 6 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -0.5 V f = 100 KHz 25 pF
Capacitance
t
t
Delay Time IC = -10 mA IB = -1 mA
d
Rise Time 35 ns
t
r
Storage Time IC = -10 mA IB1 = -IB2 = -1 mA
s
Fall Time 72 ns
t
f
V
V
CC
CC
= -3V
= -3V
35 ns
225 ns
∗ Pulsed: Pulse duration = 300 µ s, duty cycle ≤ 2 %
V
V
V
V
2/5
Page 3
TO-92 MECHANICA L DAT A
2N3906
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.195
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.609
R 2.16 2.41 0.085 0.094
S1 1.14 1.52 0.045 0.059
W 0.41 0.56 0.016 0.022
V 4 degree 6 degree 4 degree 6 degree
mm inch
3/5
Page 4
2N3906
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
DIM.
A1 4.80 0.189
T 3.80 0.150
T1 1.60 0.063
T2 2.30 0.091
d 0.48 0.019
P0 12.50 12.70 12.90 0.492 0.500 0.508
P2 5.65 6.35 7.05 0.222 0.250 0.278
F1,F2 2.44 2.54 2.94 0.096 0.100 0.116
delta H -2.00 2.00 -0.079 0.079
W 17.50 18.00 19.00 0.689 0.709 0.748
W0 5.70 6.00 6.30 0.224 0.236 0.248
W1 8.50 9.00 9.25 0.335 0.354 0.364
W2 0.50 0.020
H 18.50 20.50 0.728 0.807
H0 15.50 16.00 16.50 0.610 0.630 0.650
H1 25.00 0.984
D0 3.80 4.00 4.20 0.150 0.157 0.165
t 0.90 0.035
L 11.00 0.433
I1 3.00 0.118
delta P -1.00 1.00 -0.039 0.039
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
4/5
Page 5
2N3906
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5