Page 1
2008. 8. 29 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N3904U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=50nA(Max.), IBL=50nA(Max.)
@V
CE
=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: C
ob
=4pF(Max.) @VCB=5V.
Complementary to 2N3906U.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
200 mA
Base Current
I
B
50 mA
Collector Power Dissipation
PC *
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
E
B
MM
DIM
MILLIMETERS
_
+
2.00 0.20
_
+
1.25 0.15
_
+
0.90 0.10
0.3+0.10/-0.05
_
+
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
+
0.42 0.10
0.10 MIN
A
J
G
C
L
2
1
N
K
1. EMITTER
2. BASE
3. COLLECTOR
A
D
B
3
N
C
D
E
G
H
J
K
L
H
M
N
USM
Marking
Type Name
ZC
Lot No.
Page 2
2008. 8. 29 2/4Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=30V, VEB=3V
- - 50 nA
Base Cut-off Current
I
BL
VCE=30V, VEB=3V
- - 50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
60 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEOIC
=1mA, IB=0
40 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6.0 - - V
DC Current Gain *
hFE(1) VCE=1V, IC=0.1mA
40 - -
hFE(2) VCE=1V, IC=1mA
70 - -
hFE(3) VCE=1V, IC=10mA
100 - 300
hFE(4) VCE=1V, IC=50mA
60 - -
hFE(5) VCE=1V, IC=100mA
30 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=10mA, IB=1mA
- - 0.2
V
V
CE(sat)
2 IC=50mA, IB=5mA
- - 0.3
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=10mA, IB=1mA
0.65 - 0.85
V
V
BE(sat)
2 IC=50mA, IB=5mA
- - 0.95
Transition Frequency
f
T
VCE=20V, IC=10mA, f=100MHz
300 - - MHz
Collector Output Capacitance
C
ob
VCB=5V, IE=0, f=1MHz
- - 4.0 pF
Input Capacitance
C
ib
VBE=0.5V, IC=0, f=1MHz
- - 8.0 pF
Input Impedance
h
ie
VCE=10V, IC=1mA, f=1kHz
1.0 - 10
k
Voltage Feedback Ratio
h
re
0.5 - 8.0 x10
-4
Small-Signal Current Gain
h
fe
100 - 400
Collector Output Admittance
h
oe
1.0 - 40
Noise Figure NF
VCE=5V, IC=0.1mA Rg=1k ,
f=10Hz
15.7kHz
- - 5.0 dB
Switching Time
Delay Time
t
d
- - 35
nS
Rise Time
t
r
- - 35
Storage Time
t
stg
- - 200
Fall Time
t
f
- - 50
2N3904U
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
V
in
-0.5V
V
in
10.9V
-9.1V
10.9V
or equiv.
10kΩ
300ns
10kΩ
1N916
20µs
275Ω
V =3.0V
CC
0
t ,t < 1ns, Du=2%
r
f
275Ω
V =3.0V
CC
0
t ,t < 1ns, Du=2%
rf
V
C
Total< 4pF
V
C
Total< 4pF
out
out
Page 3
2008. 8. 29 3/4
2N3904U
Revision No : 3
I - V
100
COMMON EMITTER
Ta=25 C
80
C
60
40
20
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
1234
CEC
I =0.1mA
B
h - I
FE C
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
Ta=125 C
Ta=25 C
Ta=-55 C
COMMON EMITTER
V =1V
CE
10
310.30.1
10 30 100 300
CE
1
COMMON EMITTER
I /I =10
C
0.5
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
B
C
0.3
I - V
200
COMMON EMITTER
V =1V
160
C
120
COLLECTOR CURRENT I (mA)
CE
80
5 C
40
Ta=12
0
0
0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE V (V)
BEC
Ta=25 C
Ta=-55 C
BE
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1 0.3 1
Ta=125 C
Ta=25 C
Ta=-55 C
31030100
COLLECTOR CURRENT I (mA)
V - I
BE(sat) C
10
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
Ta=-55 C
Ta=25 C
Ta=125 C
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 3 10
COLLECTOR CURRENT I (mA)
C
COMMON EMITTER
I /I =10
CE
30 100 300
C
300
Page 4
2008. 8. 29 4/4
2N3904U
Revision No : 3
CE B
1.0
CE
0.8
C
0.6
I =1mACI =10mA
C
I =30mACI =100mA
0.4
0.2
COMMON
EMITTER
Ta=25 C
0
COLLECTOR-EMITTER VOLTAGE V (V)
0.001 0.1 1 10
0.01
BASE CURRENT I (mA)
C - V , C - VV - I
ob CB ib EB
50
30
ib
ob
10
C (pF)
5
3
CAPACITANCE C (pF)
1
C
ib
C
ob
0.5
B
REVERSE VOLTAGE V (V)
310.30.1
V (V)
f=1MHz
Ta=25 C
10 30
CB
EB
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