Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3879
DESCRIPTION
·With TO-66 package
·Wide area of safe operation
·High sustaining voltage
APPLICATIONS
·For high-speed switching and linear-
amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO(SUS)
V
EBO
IC Collector current 7 A
ICM Collector current-Peak 10 A
IB Base current 5 A
PT Total power dissipation TC=25℃ 35 W
Tj Junction temperature 200 ℃
Collector-base voltage Open emitter 120 V
Collector-emitter sustaining voltage Open base 75 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 5.0
th j-C
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3879
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-emitter sustaining voltage IC=0.2A ; IB=0 75 V
Collector-emitter saturation voltage IC=4A; IB=0.4A 1.2 V
Base-emitter saturation voltage IC=4A; IB=0.4A 2.0 V
Collector cut-off current
V
CE
V
CE
=120V;V
=100V;V
=1.5V
BE(off)
=1.5V TC=150℃
BE(off)
0.5
4.0
mA
Collector cut-off current VCE=40V; IB=0 5.0 mA
Emitter cut-off current VEB=7V; IC=0 1.0 mA
DC current gain IC=4A ; VCE=2V 12 100
DC current gain IC=4A ; VCE=5V 20 80
DC current gain IC=0.5A ; VCE=5V 40
COB Collector output capacitance IE=0 ; VCB=10V; f=1MHz 175 pF
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3879
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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