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2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3866 and
www.centralsemi.com
2N3866A are Silicon NPN RF Transistors, mounted
in a hermetically sealed package, designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current IC 0.4 A
Continuous Base Current IB 2.0 A
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, T
Thermal Resistance ΘJC 35 °C/W
55 V
CBO
30 V
CEO
3.5 V
EBO
-65 to +200 °C
stg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
V
CEO
I
V
CEV
I
V
CEV
I
V
EBO
BV
IC=5.0mA, RBE=10Ω 55 V
CER
BV
IC=500μA 55 V
CBO
BV
IC=5.0mA 30 V
CEO
BV
IE=100μA 3.5 V
EBO
V
CE(SAT)
hFE V
hFE V
hFE V
fT V
fT V
Cob V
GPE V
η V
IC=100mA, IB=20mA 1.0 V
=28V 20 μA
CE
=55V, V
CE
CE
EB
CE
CE
CE
CE
CE
CB
CC
CC
BE(OFF)
=30V, V
BE(OFF)
=3.5V 0.1 mA
=5.0V, IC=50mA (2N3866) 10 200
=5.0V, IC=50mA (2N3866A) 25 200
=5.0V, IC=360mA 5.0
=15V, IC=50mA, f=200MHz (2N3866) 500 MHz
=15V, IC=50mA, f=200MHz (2N3866A) 800 MHz
=28V, IE=0, f=1.0MHz 3.0 pF
=28V, P
out
=28V, P
out
=1.5V 0.1 mA
=1.5V, TC=200°C 5.0 mA
=1.0W, f=400MHz (Figure 1) 10 dB
=1.0W, f=400MHz (Figure 1) 45 %
R2 (15-September 2010)
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2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
Figure 1. 400MHz Test Circuit
TO-39 CASE - MECHANICAL OUTLINE
www.centralsemi.com
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R2 (15-September 2010)
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