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2N3820
P-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
• Sourced from process 89.
2N3820
1
TO-92
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings*
Symbol Parameter Ratings Units
V
DG
V
GS
I
GF
T
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage -20 V
Gate-Source Voltage 20 V
Forward Gate Current 10 mA
Storage Temperature Range -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
I
GSS
V
GS
On Characteristics
I
DSS
Small Signal Characteristics
gfs Forward Transfer Conductance V
C
iss
C
rss
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%
Gate-Source Breakdwon Voltage IG = 10µA, VDS = 0 20 V
Gate Reverse Current V
(off) Gate-Source Cutoff Voltage V
Zero-Gate Voltage Drain Current * VDS = -10V, VGS = 0 -0.3 -15 mA
Input Capacitance VDS = -10V, VGS = 0, f = 1.0KHz 32 pF
Reverse Transfer Capacitance VDS = -10V, VGS = 0, f = 1.0KHz 16 pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 10V, V
GS
= -10V, ID = -10µA8.0V
DS
= -10V, VGS = 0, f = 1.0KHz 800 5000 µmhos
DS
= 0 20 nA
DS
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”
©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
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Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
2N3820
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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