Datasheet 2n3819_2 Datasheet

Vishay Siliconix

N-Channel JFET

PRODUCT SUMMARY

V

(V) V

GS(off)

v –8 –25 2 2

FEATURES BENEFITS APPLICATIONS

D Excellent High-Frequency Gain:

Gps 11 dB @ 400 MHz

D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: A

= 60 @ 100 mA

V

Min (V) gfs Min (mS) I

(BR)GSS

Min (mA)

DSS

D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification

D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches

2N3819

DESCRIPTION

The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.

TO-226AA

S

G

D

Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.

(TO-92)

1

2

3

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

Document Number: 70238
S–04028—Rev. D ,04-Jun-01

1

Lead Temperature (
Power Dissipation

Notes
a. Derate 2.8 mW/_C above 25_C

/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

a

350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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7-1

2N3819

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter Symbol Test Conditions Min TypaMax Unit

Static

Gate-Source Breakdown Voltage V
Gate-Source Cutoff Voltage V
Saturation Drain Current

b

Gate Reverse Current I

Gate Operating Current

c

Drain Cutoff Current I
Drain-Source On-Resistance r
Gate-Source Voltage V
Gate-Source Forward Voltage V

(BR)GSS

GS(off)

I

DSS

GSS

I

G

D(off)

DS(on)

GS

GS(F)

IG = –1 mA , VDS = 0 V
VDS = 15 V, ID = 2 nA –3

VDS = 15 V, VGS = 0 V 2 10 20 mA

VGS = –15 V, VDS = 0 V –0.002 –2 nA

TA = 100_C

VDG = 10 V, ID = 1 mA –20

VDS = 10 V, VGS = –8 V 2

VGS = 0 V, ID = 1 mA 150

VDS = 15 V, ID = 200 mA

IG = 1 mA , VDS = 0 V 0.7

Dynamic

Common-Source Forward Transconductance

Common-Source Output Conductance
Common-Source Input Capacitance C
Common-Source Reverse Transfer Capacitance C

Equivalent Input Noise Voltage

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms, duty cycle v2%.
c. This parameter not registered with JEDEC.

c

c

c

g

fs

g

os
iss
rss

e

n

VDS = 15 V

VGS = 0 V

V = 0 V

VDS = 15 V, VGS = 0 V, f = 1 MHz

VDS = 10 V, VGS = 0 V, f = 100 Hz 6

f = 1 kHz 2 5.5 6.5

f = 100 MHz 1.6 5.5

f = 1 kHz 25 50

–25 –35

–8

–0.002 –2

–0.5 –2.5 –7.5

2.2 8

0.7 4

V

mA

pA

W

V

mS

mS

pF

nV⁄

√Hz

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

20

16

12

8

4

– Saturation Drain Current (mA)

DSS

I

0

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vs. Gate-Source Cutoff Voltage

I

DSS

g

fs

I

@ VDS = 15 V, V

DSS

@ VDS = 15 V, VGS = 0 V

g

fs

f = 1 kHz

0 –10

V

– Gate-Source Cutoff Voltage (V)

GS(off)

–6–2 –4 –8

7-2

GS

= 0 V

10

g

fs

– Forward Transconductance (mS)

8

6

4

2

0

– Drain-Source On-Resistance ( Ω )

DS(on)

r

On-Resistance and Output Conductance

500

400

300

200

100

0

vs. Gate-Source Cutoff Voltage

rDS @ I

@ VDS = 10 V, V

g

os

f = 1 kHz

r

DS

0 –10–6

–2 –4 –8

V

– Gate-Source Cutoff Voltage (V)

GS(off)

1 mA, VGS = 0 V

D =

g

os

S–04028—Rev. D ,04-Jun-01

100

= 0 V

GS

gos – Output Conductance (mS)

80

60

40

20

0

Document Number: 70238

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

2N3819

Vishay Siliconix

100 nA

10 nA

1 nA

TA = 125_C

100 pA

– Gate Leakage

10 pA

G

I

1 pA

0.1 pA

TA = 25_C

01020

10

8

6

4

– Drain Current (mA)

D

I

2

0

04 10

Common-Source Forward Transconductance

Gate Leakage Current

5 mA

1 mA

10

V

GS

8

0.1 mA

6

I

@

GSS

1 mA

125_C

4

5 mA

0.1 mA
2

I

GSS

@ 25_C

– Forward Transconductance (mS)

fs

g

0

0.1 1 10

V

– Drain-Gate Voltage (V) I

DG

(off)

vs. Drain Current

= –3 V

– Drain Current (mA)

D

25_C

VDS = 10 V
f = 1 kHz

TA = –55_C

125_C

Output Characteristics Output Characteristics

15

V

= –2 V V

GS

(off)

12

VGS = 0 V

–0.2 V

9

–0.4 V

–0.6 V
–0.8 V

–1.0 V
–1.2 V

–1.4 V

268 4268

V

– Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

DS

6

– Drain Current (mA)I

D

I

3

0

010

= –3 V

GS

(off)

VGS= 0 V

–0.3 V
–0.6 V
–0.9 V

–1.2 V
–1.5 V

–1.8 V

V

Transfer Characteristics

= –2 V

GS(off

)

10

8

TA = –55_C

6

125_C

4

– Drain Current (mA)

D

I

2

0

0 –0.8 –20 –3–0.4 –1.2 –1.6 –1.2–0.6 –1.8 –2.4

VGS – Gate-Source Voltage (V)

Document Number: 70238
S–04028—Rev. D ,04-Jun-01

25_C

10

Transfer Characteristics

V

VDS = 10 V VDS = 10 V

8

6

125_C

4

– Drain Current (mA)

D

2

0

= –3 V

GS(off)

TA = –55_C

25_C

VGS – Gate-Source Voltage (V)

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7-3

2N3819

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Transconductance vs. Gate-Source Voltage

10

V

= –2 V

GS(off)

8

TA = –55_C

6

4

125_C

25_C

2

– Forward Transconductance (mS)

fs

g

0

0 –0.8 –2

–0.4 –1.6–1.2

VGS – Gate-Source Voltage (V)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current

300

TA = –55_C

240

V

= –2 V

GS(off)

180

VDS = 10 V
f = 1 kHz

Transconductance vs. Gate-Source Voltgage

10

V

= –3 V

GS(off)

8

TA = –55_C

6

4

125_C

2

– Forward Transconductance (mS)

fs

g

0

100

80

60

V

– Gate-Source Voltage (V)

GS

A

V

Assume VDD = 15 V, VDS = 5 V

R

L

25_C

–1.2 –1.8 –2.4

g

fsRL

+

+

1 ) RLg

10 V

os

I

D

VDS = 10 V
f = 1 kHz

–3–0.60

–3 V

120

– Drain-Source On-Resistance ( Ω )

60

DS(on)

r

0

0.1 1 10
– Drain Current (mA) ID – Drain Current (mA)

I

D

Common-Source Input Capacitance

5

4

3

2

– Input Capacitance (pF)

iss

1

C

0

0 –20–4

vs. Gate-Source Voltage

f = 1 MHz

VDS = 0 V

VDS = 10 V

–8 –12 –16 –4 –8 –12 –16

VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

V

= –2 V

40

– Voltage Gain

V

A

GS(off)

20

–3 V

0

1

Common-Source Reverse Feedback

3.0

2.4

1.8

1.2

0.6

– Reverse Feedback Capacitance (pF)

rss

C

Capacitance vs. Gate-Source Voltage

f = 1 MHz

VDS = 0 V

VDS = 10 V

0

0 –20

100.1

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7-4

Document Number: 70238

S–04028—Rev. D ,04-Jun-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

2N3819

Vishay Siliconix

100

TA = 25_C

= 15 V

V

DS

= 0 V

V

GS

Common Source

10

(mS)

1

0.1
100 1000

200 500 1000200 500

f – Frequency (MHz) f – Frequency (MHz)

Reverse Admittance Output Admittance

10

TA = 25_C

= 15 V

V

DS

= 0 V

V

Input Admittance Forward Admittance

(mS)

1

0.1

GS

Common Source

–b

100

TA = 25_C

= 15 V

V

DS

= 0 V

V

GS

10

Common Source

g

fs

–b

is

b

is

g

is

(mS)

1

0.1
100

10

TA = 25_C

= 15 V

V

DS

= 0 V

V

rs

GS

Common Source

b

os

1

g

os

(mS)

–g

rs

0.1

0.01
100 1000 100200 500 1000200 500

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current

20

V

= –3 V

GS(off)

16

12

8

en – Noise Voltage nV/ Hz

4

ID = I

DSS

0

10 100 1 k 100 k10 k

Document Number: 70238
S–04028—Rev. D ,04-Jun-01

VDS = 10 V

ID = 5 mA

0.01

f – Frequency (MHz)f – Frequency (MHz)

20

V

= –3 V

GS(off)

16

TA = –55_C

12

25_C

8

– Output Conductance (mS)

os

g

4

125_C

0

0.1 1 10
– Drain Current (mA)f – Frequency (Hz)

I

D

VDS = 10 V
f = 1 kHz

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

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Revision: 18-Jul-08 1