Page 1
Data Sheet No. 2N3811
Type 2N3811
Geometry 0220
Polarity PNP
Qual Level: JAN - JANS
Features:
• Two electrically isolated, matched
PNP transistors as one dual unit.
• Housed in TO-78 case.
• Also available in chip form using
the 0220 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/336 which
Semicoa meets in all cases.
Maximum Ratings
Generic Part Number:
2N3810
REF: MIL-PRF-19500/336
TO-78
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter voltage
Collector-Base Voltage
Emitter-Base voltage
Collector Current, Continuous
Power Dissipation, T
Derate above 25
Power Dissipation, T
Derate above 25
= 25oC, one section
A
o
C
= 25oC, two sections
A
o
C
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
T
STG
60 V
60 V
5.0 V
50 mA
0.5 W
2.86
0.6 W
3.43
-65 to +200
-65 to +200
mW/oC
mW/oC
o
C
o
C
Page 2
Data Sheet No. 2N3811
OFF Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IC = 10 µA
Collector-Base Cutoff Current
VCB = 50 V
Collector-Base Cutoff Current
VCB = 50 V, TA = +150oC
Collector-Base Cuttoff Current
VCE = 50 V, IC = 1 µA
Forward Current Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
CBO2
I
EBO
60 --- V
60 --- V
5.0 ---
--- 10 nA
--- 10 µA
--- 10 nA
V
IC = 1 µA, V
= 5 V h
CE
IC = 10 µA, VCE = 5 V h
IC = 100 µA, VCE = 5 V h
IC = 500 µA, VCE = 5 V h
IC = 1 mA, VCE = 5 V h
IC = 10 mA, VCE = 5 V h
IC = 100 µA, VCE = 5 V, TA = -55oC h
Base-Emitter Saturation Voltage
IC = 100 µA, IB = 10 µA V
IC = 1 mA, IB = 100 µA V
V
= 5 V, IC = 100 µA V
CE
Collector-Emitter Saturation Voltage
IC = 100 µA, IB = 10 µA V
IC = 1 mA, IB = 100 µA V
FE1
FE2
FE3
FE4
FE5
FE6
FE7
BE(sat)1
BE(sat)2
BE(sat)3
CE(sat)1
CE(sat)2
75 --- --225 --- --300 900 --300 900 --300 900 --250 --- --100 --- ---
--- 0.7 V dc
--- 0.8 V dc
--- 0.7 V dc
--- 0.2 V dc
--- 0.25 V dc
Page 3
Data Sheet No. 2N3811
Small Signal Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio (Gain Ratio)
VCE = 5 V, IC = 100 µA
Base Emitter Value, Nonsaturated Absolute
|V
Value of Differential,
BE1
- V
BE2|1
VCE = 5 V, IC = 10 µA
VCE = 5 V, IC = 100 µA
VCE = 5 V, IC = 10 mA
Magnitude of Small-Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 5 V, IC = 500 µA, f = 30 MHz
VCE = 5 V, IC = 1 mA, f = 100 MHz
Small-Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 1.0 mA, f = 1 kHz
Small-Signal, Short Circuit
Input Impedance
VCE = 10 V, IC = 1 mA, f = 1 kHz
h
FE3-1
/ h
|hFE|
|hFE|
h
FE
h
ie
FE3-2
1
2
0.9 1.0
---
--- 5.0 mV
--- 3.0 mV
--- 5.0 mV
1.0 --- ---
1.0 5.0 ---
300 900 ---
3.0 40 kohm
Small-Signal, Open Circuit
Output Admittance
VCE = 10 V, IC = 1 mA, f = 1 kHz
Small-Signal, Open Circuit
Reverse Voltage Transfer Ratio
VCE = 10 V, IC = 1 mA, f = 1 kHz
Noise Figure
VCE = 10 V, IC = 100 µA, R = 3 kO, f = 100 Hz
VCE = 10 V, IC = 100 µA, R = 3 kO, f = 1 kHz
VCE = 10 V, IC = 100 µA, R = 3 kO, f = 10 kHz
VCE = 10 V, IC = 100 µA, R = 3 kO,
noise bandwidth 10 Hz to 15.7 kHz
Open Circuit, Output Capacitance
VCB = 5 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Short Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
h
oe
h
re
5.0 60 µohm
---
25 x 10
-4
F1 --- 4.0 dB
F2 --- 1.5 dB
F3 --- 2.0 dB
F4 --- 2.5 dB
C
OBO
C
IBO
--- 5.0 pF
--- 8.0 pF
---
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