Page 1
1
Motorola Bipolar Power Transistor Device Data
. . . designed for linear amplifiers, series pass regulators, and inductive switching
applications.
• Forward Biased Second Breakdown Current Capability
I
S/b
= 3.75 Adc @ VCE = 40 Vdc — 2N3771
I
S/b
= 2.5 Adc @ VCE = 60 Vdc — 2N3772
*MAXIMUM RATINGS
Rating
Symbol
2N3771
2N3772
Unit
Collector–Emitter Voltage
V
CEO
40
60
Vdc
Collector–Emitter Voltage
V
CEX
50
80
Vdc
Collector–Base Voltage
V
CB
50
100
Vdc
Emitter–Base Voltage
V
EB
5.0
7.0
Vdc
Collector Current — Continuous
Peak
I
C
30
30
20
30
Adc
Base Current — Continuous
Peak
I
B
7.5
15
5.0
15
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
P
D
150
0.855
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
2N3771, 2N3772
Unit
Thermal Resistance, Junction to Case
θ
JC
1.17
_
C/W
*Indicates JEDEC Registered Data.
200
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
150
100
50
25
P
D
, POWER DISSIPATION (WATTS)
175
125
75
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3771/D
Motorola, Inc. 1995
*Motorola Preferred Device
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
Page 2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
*Collector–Emitter Sustaining Voltage (1) 2N3771
(IC = 0.2 Adc, IB = 0) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
40
60
—
—
Vdc
Collector–Emitter Sustaining Voltage 2N3771
(IC = 0.2 Adc, V
EB(off)
= 1.5 Vdc, RBE = 100 Ohms) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEX(sus)
50
80
—
—
Vdc
Collector–Emitter Sustaining Voltage 2N3771
(IC = 0.2 Adc, RBE = 100 Ohms) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CER(sus)
45
70
—
—
Vdc
*Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) 2N3771
(VCE = 50 Vdc, IB = 0) 2N3772
(VCE = 25 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEO
—
—
10
10
mAdc
*Collector Cutoff Current
(VCE = 50 Vdc, V
EB(off)
= 1.5 Vdc) 2N3771
(VCE = 100 Vdc, V
EB(off)
= 1.5 Vdc) 2N3772
(VCE = 45 Vdc, V
EB(off)
= 1.5 Vdc) 2N6257
(VCE = 30 Vdc, V
EB(off)
= 1.5 Vdc, TC = 150_C) 2N3771
2N3772
(VCE = 45 Vdc, V
EB(off)
= 1.5 Vdc, TC = 150_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEV
—
—
—
—
—
2.0
5.0
4.0
10
10
mAdc
*Collector Cutoff Current
(VCB = 50 Vdc, IE = 0) 2N3771
(VCB = 100 Vdc, IE = 0) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CBO
—
—
2.0
5.0
mAdc
*Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0) 2N3771
(VBE = 7.0 Vdc, IC = 0) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
—
—
5.0
5.0
mAdc
*ON CHARACTERISTICS
DC Current Gain (1)
(IC = 15 Adc, VCE = 4.0 Vdc) 2N3771
(IC = 10 Adc, VCE = 4.0 Vdc) 2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc) 2N3771
(IC = 20 Adc, VCE = 4.0 Vdc) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
15
15
5.0
5.0
60
60
—
—
—
Collector–Emitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc) 2N3771
(IC = 10 Adc, IB = 1.0 Adc) 2N3772
(IC = 30 Adc, IB = 6.0 Adc) 2N3771
(IC = 20 Adc, IB = 4.0 Adc) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
—
—
—
—
2.0
1.4
4.0
4.0
Vdc
Base–Emitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc) 2N3771
(IC = 10 Adc, VCE = 4.0 Vdc) 2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
—
—
2.7
2.2
Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f
test
= 50 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
f
T
0.2
—
MHz
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
fe
40
—
—
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non–repetitive)
(VCE = 40 Vdc) 2N3771
(VCE = 60 Vdc) 2N3772
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
S/b
3.75
2.5
—
—
Adc
*Indicates JEDEC Registered Data.
(1) Pulse Test: 300 µs, Rep. Rate 60 cps.
Page 3
3
Motorola Bipolar Power Transistor Device Data
Figure 2. Thermal Response — 2N3771, 2N3772
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2000
θ
JC
(t) = r(t)
θ
JC
θ
JC
= 0.875
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.02
1000
40
1.0
Figure 3. Active–Region Safe Operating Area
— 2N3771, 2N3772
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
30
20
10
2.0
2.0 3.0 5.0 10 30 50 70 100
7.0
I
C
, COLLECTOR CURRENT (AMP)
dc
5.0
7.0
3.0
100 µs
1.0 ms
20
2N3771
2N3772, (dc)
40 µs
100 ms
500 ms
PULSE CURVES APPLY
FOR ALL DEVICES
2N3771
2N3772
200 µs
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
TC = 25°C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
Figure 3 is based o n JEDEC registered Data. Second
breakdown pulse limits are valid for d uty cycles to 10%
provided T
J(pk)
< 200_C. T
J(pk)
may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, T
J(pk)
will be found to be less than T
J(max)
for pulse widths of 1 ms and less. When using Motorola
transistors, it is permissible to increase the pulse power limits
until limited by T
J(max)
.
Figure 4. Switching Time Test Circuit
+11 V
25 µs
0
–9.0 V
R
B
–4 V
D
1
SCOPE
V
CC
+30 V
R
C
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
10
0.3
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
0.01
0.5 0.7 1.0 2.0 5.0 7.0 30
VCC = 30
IC/IB = 10
TJ = 25°C
0.05
t, TIME ( s)
µ
t
d
t
r
3.0
0.02
10 20
V
BE(off)
= 5.0 V
Page 4
4
Motorola Bipolar Power Transistor Device Data
100
0.3
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
50
20
10
5.0
2.0
1.0
0.1
0.5 1.0 2.0 5.0 7.0 30
VCC = 30 V
IC/IB = 10
IB1 = I
B2
TJ = 25
°
C
0.5
t, TIME ( s)
µ
t
f
t
s
3.0
0.2
10 20
2000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
200
0.2 1.0 2.0 5.0 100
C
ib
10 20
C, CAPACITANCE (pF)
1000
700
500
300
0.5 50
C
ob
TJ = 25°C
500
0.3
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
0.5 0.7 1.0 2.0 3.0 5.0 10 20 30
100
50
20
200
h
FE
, DC CURRENT GAIN
TJ = 150°C
25°C
–55°C
7.0
300
70
30
10
7.0
VCE = 4.0 V
Figure 9. Collector Saturation Region
2.0
0.01
IC, COLLECTOR CURRENT (AMP)
0
0.02 0.1 0.2 0.5 1.0 2.0 5.0 10
1.6
1.2
0.8
0.4
IC = 2.0 A
TJ = 25°C
0.05
5.0 A 10 A 20 A
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
V
Page 5
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
A
N
E
C
K
–T–
SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
U
L
G
B
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Page 6
6
Motorola Bipolar Power Transistor Device Data
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2N3771/D
*2N3771/D*
◊
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