HIGH POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
2N3771
2N3772
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N3771 2N3772
V
V
V
V
I
I
P
T
Collector-Emitter Voltage (IE = 0) 40 60 V
CEO
Collector-Emitter Voltage (VBE = -1.5V) 50 80 V
CEV
Collector-Base Voltage (IB = 0) 50 100 V
CBO
Emitter-Base Voltage (IC = 0) 5 7 V
EBO
Collector Current 30 20 A
I
C
Collector Peak Current 30 30 A
CM
Base Current 7.5 5 A
I
B
Base Peak Current 15 15 A
BM
Total Dissipation at Tc ≤ 25 oC 150 W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
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2N3771/2N3772
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
CEO
I
CBO
I
EBO
V
CEO(sus)
V
CEV(sus)
V
CER(sus)
V
CE(sat)
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
Sustaining Voltage
(V
= -1.5V)
EB
∗ Collector-Emitter
Sustaining Voltage
(R
= 100 Ω)
BE
∗ Collector-Emitter
Saturation Voltage
for 2N3771 V
for 2N3772 V
for all V
for 2N3771 V
for 2N3772 V
for 2N3771 V
for 2N3772 V
for 2N3771 V
for 2N3772 V
I
= 0.2 A
C
= 50 V
CB
= 100 V
CB
= 30 V Tj = 150 oC
CB
= 30 V
CB
= 50 V
CB
= 50 V
CB
= 100 V
CB
= 5 V
CB
= 7 V
CB
for 2N3771
for 2N3772
I
= 0.2 A RBE = 100 Ω
C
for 2N3771
for 2N3772
I
= 0.2 A
C
for 2N3771
for 2N3772
for 2N3771
I
= 15 A IB = 1.5 A
C
I
= 30 A IB = 6 A
C
40
60
50
80
45
70
2
5
10
10
10
4
5
5
5
2
4
for 2N3772
I
= 10 A IB = 1 A
C
I
= 20 A IB = 4 A
C
V
∗ Base-Emitter Voltage for 2N3771
BE
I
= 15 A VCE = 4 V
C
1.4
4
2.7
for 2N3772
I
= 10 A VCE = 4 A
C
h
∗ DC Current Gain for 2N3771
FE
I
= 15 A VCE = 4 V
C
I
= 30 A VCE = 4 V
C
15
5
2.7
60
for 2N3772
I
= 10 A VCE = 4 V
C
I
= 20 A VCE = 4 V
C
h
Small Signal Current
FE
IC = 1 A VCE = 4 V f = 1 KHz 40
15
60
5
Gain
f
I
s/b
Transition frequency IC = 1 A VCE = 4 V f = 50 KHz 0.2 MHz
T
Second Breakdown
VCE = 25 V t = 1 s (non repetitive) 6 A
Collector Current
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
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P003F
TO-3 MECHANICAL DATA
2N3771/2N3772
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
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2N3771/2N3772
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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. . .
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