Page 1
2N3771, 2N3772
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2N3771 is a Preferred Device
High Power NPN Silicon
Power Transistors
These devices are designed for linear amplifiers, series pass
regulators, and inductive switching applications.
Features
• Forward Biased Second Breakdown Current Capability
I
= 3.75 Adc @ V
S/b
= 40 Vdc − 2N3771
CE
= 2.5 Adc @ VCE = 60 Vdc − 2N3772
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
ООООООООО
Peak
Base Current − Continuous
Peak
Total Device Dissipation @ TC = 25°C
ООООООООО
Derate above 25°C
Operating and Storage Junction
Temperature Range
ООООООООО
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
Symbol
V
CEO
V
CEX
V
CB
V
EB
I
C
Î
I
B
P
D
Î
TJ, T
stg
Î
Symbol
q
JC
2N3771
Î
40
50
50
5.0
30
30
7.5
2N3772
60
80
100
7.0
20
30
ÎÎ
5.015Adc
15
150
ÎÎÎÎ
0.855
–65 to +200
ÎÎÎÎ
Max
1.17
Unit
Vdc
Vdc
Vdc
Vdc
Adc
W
W/°C
°C
Unit
°C/W
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20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS, 150 WATTS
MARKING
DIAGRAM
2N377xG
AYYWW
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N377x = Device Code
x = 1 or 2
G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device Package
2N3771 TO−204 100 Units / Tray
2N3771G TO−204
(Pb−Free)
2N3772 TO−204 100 Units / Tray
2N3772G TO−204
(Pb−Free)
MEX
Shipping
100 Units / Tray
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 11
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
2N3771/D
Page 2
2N3771, 2N3772
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2 and 3) 2N3771
(IC = 0.2 Adc, IB = 0) 2N3772
Collector−Emitter Sustaining Voltage 2N3771
ОООООООООООООООООООО
(IC = 0.2 Adc, V
= 1.5 Vdc, RBE = 100 W) 2N3772
EB(off)
Collector−Emitter Sustaining Voltage 2N3771
(IC = 0.2 Adc, RBE = 100 W) 2N3772
ОООООООООООООООООООО
Collector Cutoff Current (Note 2)
(VCE = 30 Vdc, IB = 0) 2N3771
(VCE = 50 Vdc, IB = 0) 2N3772
ОООООООООООООООООООО
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current (Note 2)
ОООООООООООООООООООО
(VCE = 50 Vdc, V
(VCE = 100 Vdc, V
ОООООООООООООООООООО
(VCE = 45 Vdc, V
(VCE = 30 Vdc, V
ОООООООООООООООООООО
(VCE = 45 Vdc, V
ОООООООООООООООООООО
= 1.5 Vdc) 2N3771
EB(off)
= 1.5 Vdc) 2N3772
EB(off)
= 1.5 Vdc) 2N6257
EB(off)
= 1.5 Vdc, TC = 150_C) 2N3771
EB(off)
= 1.5 Vdc, TC = 150_C)
EB(off)
2N3772
Collector Cutoff Current (Note 2)
(VCB = 50 Vdc, IE = 0) 2N3771
ОООООООООООООООООООО
(VCB = 100 Vdc, IE = 0) 2N3772
Emitter Cutoff Current (Note 2)
(VBE = 5.0 Vdc, IC = 0) 2N3771
ОООООООООООООООООООО
(VBE = 7.0 Vdc, IC = 0) 2N3772
ON CHARACTERISTICS (Note 2)
DC Current Gain (Note 3)
ОООООООООООООООООООО
(IC = 15 Adc, VCE = 4.0 Vdc) 2N3771
(IC = 10 Adc, VCE = 4.0 Vdc) 2N3772
ОООООООООООООООООООО
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc) 2N3771
ОООООООООООООООООООО
(IC = 20 Adc, VCE = 4.0 Vdc) 2N3772
ОООООООООООООООООООО
Collector−Emitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc) 2N3771
(IC = 10 Adc, IB = 1.0 Adc) 2N3772
ОООООООООООООООООООО
(IC = 30 Adc, IB = 6.0 Adc) 2N3771
(IC = 20 Adc, IB = 4.0 Adc) 2N3772
ОООООООООООООООООООО
Base−Emitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc) 2N3771
ОООООООООООООООООООО
(IC = 10 Adc, VCE = 4.0 Vdc) 2N3772
(IC = 8.0 Adc, VCE = 4.0 Vdc)
ОООООООООООООООООООО
*DYNAMIC CHARACTERISTICS (Note 2)
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f
= 50 kHz)
test
Small−Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ОООООООООООООООООООО
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive)
(VCE = 40 Vdc) 2N3771
ОООООООООООООООООООО
(VCE = 60 Vdc) 2N3772
2. Indicates JEDEC registered data.
3. Pulse Test: 300 ms, Rep. Rate 60 cps.
Symbol
V
CEO(sus)
V
CEX(sus)
ÎÎÎ
V
CER(sus)
ÎÎÎ
I
CEO
ÎÎÎ
I
CEV
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(on)
ÎÎÎ
ÎÎÎ
f
T
h
fe
ÎÎÎ
I
S/b
ÎÎÎ
Min
40
60
50
Î
80
45
70
Î
−
−
Î
Î
−
−
Î
−
−
Î
−
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−
Î
−
−
Î
−
Î
15
15
Î
Î
5.0
5.0
Î
−
−
Î
−
Î
−
−
Î
−
Î
0.2
40
Î
3.75
Î
2.5
Max
−
−
−
ÎÎ
−
−
−
ÎÎ
10
10
ÎÎ
ÎÎ
2.0
5.0
ÎÎ
4.0
10
ÎÎ
10
ÎÎ
2.0
ÎÎ
5.0
5.0
ÎÎ
5.0
ÎÎ
60
60
ÎÎ
ÎÎ
−
−
ÎÎ
2.0
1.4
ÎÎ
4.0
ÎÎ
4.0
2.7
ÎÎ
2.2
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
Unit
Vdc
Vdc
Î
Vdc
Î
mAdc
Î
mAdc
Î
Î
Î
Î
mAdc
Î
mAdc
Î
−
Î
Î
Î
Î
Vdc
Î
Î
Vdc
Î
Î
MHz
−
Î
Adc
Î
2
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Page 3
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.05
0.03
RESISTANCE (NORMALIZED)
SINGLE PULSE
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.01
0.02
2N3771, 2N3772
200
175
150
125
100
75
50
, POWER DISSIPATION (WATTS)
D
P
25
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
P
qJC(t) = r(t) q
qJC = 0.875°C/W MAX
0.02
0.01
0.05
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2000
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
t, TIME (ms)
− TC = P
JC
(pk) qJC
1
(t)
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
1000
Figure 2. Thermal Response — 2N3771, 2N3772
40
30
2N3771
20
2N3772, (dc)
dc
10
7.0
5.0
, COLLECTOR CURRENT (AMP)
C
I
3.0
PULSE CURVES APPLY
FOR ALL DEVICES
2.0
1.0
TC = 25°C
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
2.0 3.0 5.0 10 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
7.0
CEO
2N3771
2N3772
20
Figure 3. Active−Region Safe Operating Area
— 2N3771, 2N3772
40 ms
100 ms
200 ms
1.0 ms
100 ms
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided T
< 200_C. T
J(pk)
may be calculated from the
J(pk)
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, T
will be found to be less than T
J(pk)
J(max)
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by T
J(max)
.
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3
Page 4
V
+30 V
25 ms
+11 V
R
B
0
51
D
1
−9.0 V
tr, tf ≤ 10 ns
−4 V
DUTY CYCLE = 1.0%
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
2N3771, 2N3772
CC
R
C
SCOPE
t, TIME (s)μ
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
VCC = 30
IC/IB = 10
TJ = 25°C
0.3
0.5 0.7 1.0 2.0 5.0 7.0 30
V
BE(off)
= 5.0 V
3.0
IC, COLLECTOR CURRENT (AMP)
t
r
t
d
10 20
t, TIME (s)μ
, DC CURRENT GAIN
FE
h
Figure 4. Switching Time Test Circuit
100
50
20
10
5.0
t
2.0
s
1.0
t
0.5
f
0.2
0.1
0.3
0.5 1.0 2.0 5.0 7.0 30
3.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
500
300
TJ = 150°C
200
25°C
100
70
50
−55 °C
30
20
10
7.0
5.0
0.3
0.5 0.7 1.0 2.0 3.0 5.0 10 20 30
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
7.0
VCC = 30 V
IC/IB = 10
IB1 = I
B2
TJ = 25°C
10 20
VCE = 4.0 V
C, CAPACITANCE (pF)
2000
1000
700
500
300
200
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
V
Figure 5. Turn−On Time
C
ib
C
ob
0.1
0.2 1.0 2.0 5.0 100
0.5 50
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
2.0
1.6
IC = 2.0 A
5.0 A 10 A 20 A
1.2
0.8
0.4
0
0.01
0.02 0.1 0.2 0.5 1.0 2.0 5.0 10
0.05
IC, COLLECTOR CURRENT (AMP)
Figure 9. Collector Saturation Region
TJ = 25°C
TJ = 25°C
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Page 5
2N3771, 2N3772
TO−204 (TO−3)
PACKAGE DIMENSIONS
CASE 1−07
ISSUE Z
A
N
C
E
2 PLD
0.13 (0.005) Y
U
V
H
L
2
1
G
K
M
−Y−
−T−
B
T
SEATING
PLANE
M
Q
M
−Q−
0.13 (0.005) T
M
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
MILLIMETERSINCHES
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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