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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2N3740/3741
DESCRIPTION
·DC Current Gain : hFE= 30-100@IC= -250mA
·Wide Area of Safe Operation
·Collector-Emitter Saturation Voltage-
: V
APPLICATIONS
·Designed for use as drivers, switches and medium-power
amplifier and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
)= -0.6 V(Max)@ IC = -1A
CE(sat
PARAMETER VALUE UNIT
2N3740 -60
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous -4 A
ICM Collector Current-Peak -10 A
IB Base Current -2 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage
2N3741 -80
2N3740 -60
Collector-Emitter Voltage
2N3741 -80
Emitter-Base Voltage -7 V
25 W
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
V
V
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 7.0 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistors 2N3740/3741
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
V
BE(on)
I
CEO
I
CEX
I
CBO
(sat)
Collector-Emitter
Sustaining Voltage
Collector-Emitter Saturation Voltage IC= -1A; IB= -125mA -0.6 V
Base-Emitter On Voltage IC= -250mA ; VCE= -1V -1.0 V
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
PARAMETER CONDITIONS MIN MAX UNIT
2N3740 -60
2N3741
IC= -100mA ; IB= 0
-80
V
2N3740 VCE= -40V; IB= 0 -1.0
2N3741 VCE= -60V; IB= 0
2N3740
2N3741
VCE= -60V; V
VCE= -40V; V
VCE= -80V; V
VCE= -60V; V
BE(
BE(
BE(
BE(
= -1.5V
)
off
= -1.5V,TC=150℃
)
off
= -1.5V
)
off
= -1.5V,TC=150℃
)
off
-1.0
-0.1
-1.0
-0.1
-1.0
mA
mA
2N3740 VCB= -60V; IE= 0 -0.1
2N3741 VCB= -80V; IE= 0
-0.1
mA
I
Emitter Cutoff Current VEB= -7V; IC=0 -0.5 mA
EBO
h
DC Current Gain IC= -100mA ; VCE= -1V 40
FE-1
h
DC Current Gain IC= -250mA ; VCE= -1V 30 100
FE-2
h
DC Current Gain IC= -500mA ; VCE= -1V 20
FE-3
h
DC Current Gain IC= -1A ; VCE= -1V 10
FE-4
COB Output Capacitance
fT Current-Gain—Bandwidth Product
IE= 0 ; VCB= -10V;f
test
IC=-0.1A ; VCE= -10V ;f
= 0.1MHz
= 1.0MHz
test
100 pF
3 MHz
isc Website：www.iscsemi.cn
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