Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N3740 2N3741
DESCRIPTION
·With TO-66 package
·Excellent safe area limits
·Low collector saturation voltage
APPLICATIONS
·Suitable for use in as drivers,switches and
medium-power amplifier and applications
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -4 A
ICM Collector current-Peak -10 A
IB Base current -2 mA
PT Total power dissipation TC=25℃ 25 W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -7 V
2N3740 -60
2N3741
2N3740 -60
2N3741
Open emitter
Open base
V
-80
V
-80
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance from junction to case 7.0
th j-C
℃/W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N3740 2N3741
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
Collector-emitter
breakdown voltage
2N3741
IC=-100mA ; IB=0
V
-80
Collector-emitter saturation voltage IC=-1A ;IB=-125mA -0.6 V
VBE Base -emitter on voltage IC=-0.25A ; VCE=-1V -1.0 V
2N3740 -60
I
CEX
Collector
cut-off current
2N3740
2N3741
=-60V;V
V
CE
VCE=-40V;V
=80V;V
V
CE
VCE=60V;V
=-1.5V
BE(off)
=-1.5V;TC=150℃
BE(off)
=1.5V
BE(off)
=1.5V;TC=150℃
BE(off)
-0.1
-1.0
mA
-0.1
-1.0
2N3740 VCE=-40V; IB=0
I
CEO
Collector
cut-off current
-1.0 mA
2N3741 VCE=-60V; IB=0
2N3740 VCB=-60V; IE=0
I
I
CBO
EBO
Collector
cut-off current
2N3741 V
=-80V; IE=0
CB
-0.1 mA
Emitter cut-off current VEB=-7V; IC=0 -0.5 mA
h
DC current gain IC=-0.1A ; VCE=-1V 40
FE-1
h
DC current gain IC=-0.25A ; VCE=-1V 30 100
FE-2
h
DC current gain IC=-0.5A ; VCE=-1V 20
FE-3
h
DC current gain IC=-1A ; VCE=-1V 10
FE-4
fT Transition frequency IC=-0.1A ; VCE=-10V;f=1.0MHz 3.0 MHz
COB Output capacitance IE=0 ; VCB=-10V;f=100kHz 100 pF
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N3740 2N3741
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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