Datasheet 2n3738 Datasheet

Page 1
Document Number 6051
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
2N3738
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Collector Current
I
C(PK)
Peak Collector Current
I
B
Base Current
P
D
Total Device Dissipation at T
case
= 25°C
Derate 25°C
T
stg
Operating and Storage Temperature Range
250V 225V
6V 1A 2A
0.5A 20W
0.133W/°C
–65 to 200°C
MECHANICAL DATA
Dimensions in mm
24.13 (0.95)
24.63 (0.97)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161) rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360) min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
1
2
POWER TRANSISTORS
NPN SILICON
TO66 Package (TO-213AA)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
FEATURES
• Hermetically Packaged.
• Low Saturation Voltage
• High Gain
Pin 1 = Base Pin 2 = Emitter Case = Collector
Page 2
Document Number 6051
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
2N3738
Parameter Test Conditions Min. Typ. Max. Unit
225
0.1
0.25
0.5
1.0
0.1 30 40 200 25
2.5
1.0
10
20
35
V mA mA mA
mA mA
—
V
MHz
pF
—
IC= 5mA IB= 0 VCB= 250V IE= 0 VCE= 125V IB= 0 VCE= 250V V
BE(OFF)
= 1.5V
VCE= 125V V
BE(OFF)
= 1.5V
TC = 100°C VEB= 6V IC= 50mA VCE= 10V IC= 100mA VCE= 10V IC= 250mA VCE= 10V IC= 250mA IB= 25mA IC= 100mA V
CE
= 10V
IC= 100mA VCE= 10V
f = 10MHz VCB= 100V IE= 0
f = 100KHz IC= 100mA VCE= 20V
f = 1KHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Collector– Emitter Breakdown Voltage Collector Base Cut–Off Current Collector Emiiter Cut–Off Current
Collector Cut–Off Current
Emitter Base Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage Base – Emitter on Voltage
Transition Frequency
Output Capacitance
Small Signal Current Gain
* Pulse Width ≤ 300µs , Duty Cycle < 2%
V
CEO(BR)*
I
CBO
I
CEO
I
CEV
I
EBO
h
FE*
V
CE(sat)*
V
BE(on)*
f
T
C
ob
h
fe
DYNAMIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
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