Page 1
HIGH VOLTAGE, HIGH CURRENT SWITCH
DESCRIPT I ON
The 2N3725 is a silicon planar epitaxial transistor
inTO-39metalcase Itisahigh-voltage, high current
switch used for memory applications requiring
breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT(300 MHz) and tight
controlon storage time.
2N3725
TO-39
INTE RNA L SCHEMA TI C DIAGR AM
ABSOLUTE M AXI MUM RATING S
Symbol Parame t er Valu e Unit
V
CBO
V
CES
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 80 V
Collector-emitter Voltage (VBE=0) 80 V
Collector-emitter Voltage (IB=0) 50 V
Emitter-base Voltage (IC=0) 6 V
Collector Current 1 A
Total Power Dissipation at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
≤ 25 °C
≤ 25 °C
0.8
3.5
W
W
January 1989
1/6
Page 2
2N3725
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
50
220
°C/W
°C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V(
BR)CBO
V
(BR)CES
V(
BR)CEO
V(
BR)EBO
V
CE(sat)
V
BE (sat )
h
FE
h
fe
C
CB O
C
EBO
t
on
t
off
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
** See test circuit.
Collector Cutoff Current (IE=0) VCB=60V
V
=60V T
CB
Collector-base Breakdown
Voltage (I
E
=0)
Collector-emitter Breakdown
Voltage (VBE=0)
=10µA80V
I
C
=10µA80V
I
C
* Collector-emitter Breakdown
I
Voltage (IB=0)
Emitter-base Breakdown
Voltage (IC=0)
* Collector-emitter Saturation
Voltage
=10mA
C
I
=10µA6V
E
IC=10mA
IC=100mA
I
=300mA
C
IC=500mA
I
=800mA
C
IC=1000mA
* Base-emitter Saturation Voltage IC=10mA
IC=100mA
I
=300mA
C
IC=500mA
IC=800mA
I
=1000mA
C
* DC Current Gain IC=10mA
IC=100mA
IC=300mA
I
=1000mA
C
IC=800mA
I
=500mA
C
High Frequency Current Gain IC=50mA
f = 100 MHz
Collector-base Capacitance IE=0
f = 1 MHz
Emitter-base Capacitance IC=0
f = 1 MHz
** Turn-on Time IC=500mA
IB=50mA
** Turn off Time IC=500mA
IB1=–IB2=
amb
I
B
IB=10mA
I
B
IB=50mA
I
B
IB= 100 mA
I
B
IB=10mA
I
B
IB=50mA
IB=80mA
I
B
V
CE
VCE=1V
VCE=1V
V
CE
VCE=2V
V
CE
VCE=10V
VCB=10V
VCB= 0.5 V
VCC=30V
VCC=30V
50 mA
=100°C
=1mA
=30mA
=80mA
=1mA
=30mA
= 100 mA
=1V
=5V
=1V
1.7
120µAµA
50 V
0.4
0.5
0.6
1.0
1.1
60
90
60
65
40
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
150
0.19
0.21
0.31
0.64
0.75
0.89
0.9
30
60
40
25
20
35
3
10 pF
55 pF
35 ns
60 ns
V
V
V
V
V
V
V
V
V
V
V
V
2/6
Page 3
2N3725
DC Current Gain. Collector-emitter SaturationVoltage.
Base-emitter Saturation Voltage. Contours of Constant Transition Frequency.
SwitchingCharacteristics. Switching Characteristics.
3/6
Page 4
2N3725
Test Circuit for ton,t
PULSEGENERATOR: TO OSCILLOSCOPE :
tr,tf≤1.0ns tr<1.0 ns
PW ≈ 1.0µsZ
ZIN=50Ω
DC <2%
off
.
≥ 100 KΩ
IN
4/6
Page 5
TO39 MECHANICAL DATA
2N3725
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 6.6 0.260
E 8.5 0.334
F 9.4 0.370
G 5.08 0.200
H 1.2 0.047
I 0.9 0.035
o
L45
(typ.)
I
H
G
F
L
DA
E
B
P008B
5/6
Page 6
2N3725
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder anypatentor patent rightsofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subjectto changewithout notice.Thispublication supersedes and replaces all information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor useas criticalcomponentsin lifesupportdevices or systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France - Germany - Hong Kong -Italy - Japan - Korea- Malaysia -Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland -Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
6/6
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