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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N3715/3716
DESCRIPTION
·DC Current Gain : hFE= 50-150@IC= 1A
·Wide Area of Safe Operation
·Low Collector Saturation Voltage-
: V
·Complement to Type 2N3791/3792
APPLICATIONS
·Designed for medium-speed switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
= 0.8V(Max.)@ IC= 5A
CE(sat)
PARAMETER VALUE UNIT
2N3715 80
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 10 A
IB Base Current 4 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage
2N3716 100
2N3715 60
Collector-Emitter Voltage
2N3716 80
Emitter-Base Voltage 7 V
150 W
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER MAX UNIT
V
V
R
th j-c
Thermal Resistance,Junction to Case 1.17 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors 2N3715/3716
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N3715 60
V
CEO(SUS)
V
CE
V
BE
V
BE(on)
I
CEX
I
EBO
h
FE-1
(sat)
(sat)
Collector-Emitter
Sustaining Voltage
2N3716
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.8 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V
Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.5 V
2N3715
Collector Cutoff Current
2N3716
IC= 200mA ; IB= 0
VCE= 80V; V
VCE= 60V; V
VCE= 100V; V
VCE= 80V; V
BE(
BE(
BE(
BE(
off
off
off
off
= -1.5V
)
= -1.5V, TC=150℃
)
= -1.5V
)
= -1.5V, TC=150℃
)
V
80
Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA
DC Current Gain IC= 1A ; VCE= 2V 50 150
1.0
10
mA
1.0
10
h
DC Current Gain IC= 3A ; VCE= 2V 30
FE-2
fT Current-Gain—Bandwidth Product
Switching Times
tr
t
stg
tf
Rise Time 0.45
Storage Time 0.3 μs
Fall Time
IC= 0.5A ; VCE= 10V ;f
IC= 5A; IB1= -IB2= 0.5A
= 1.0MHz
test
4 MHz
μs
0.4 μs
isc Website：www.iscsemi.cn
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