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T
DATA SHEE
2N3700
2N3701
NPN SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current
general purpose amplifier applications.
MAXIMUM RATINGS
(TA=25°C)
2N3700
SYMBOL
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current I
CBO
CEO
EBO
C
2N3701 UNITS
140 V
80 V
7.0 V
1.0 A
Power Dissipation PD 500 mW
Power Dissipation (TC=25°C) PD 1.8 W
Operating and Storage
Junction Temperature TJ,T
-65 to +200 °C
stg
Thermal Resistance ΘJA 350 °C/W
Thermal Resistance ΘJC 97.2 °C/W
ELECTRICAL CHARACTERISTICS
2N3700
SYMBOL
I
CBO
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
TEST CONDITIONS MIN MAX MIN MAX UNITS
VCB=90V 10 10 nA
VCB=90V, TA=150°C 10 10 µA
VEB=5.0V 10 10 nA
IC=100µA 140 140 V
IC=30mA 80 80 V
I
=100µA 7.0 7.0 V
E
IC=150mA, IB=15mA 0.2 0.2 V
IC=500mA, IB=50mA 0.5 0.5 V
IC=150mA, IB=15mA 1.1 1.1 V
(TA=25°C)
2N3701
hFE VCE=10V, IC=0.1mA 50 30 100
hFE VCE=10V, IC=10mA 90 40 120
hFE VCE=10V, IC=150mA 100 300 40 120
hFE VCE=10V, IC=150mA , TA=-55°C 40 -
hFE VCE=10V, IC=500mA 50 30 100
hFE VCE=10V, IC=1.0A 15 15
(Continue)
R0
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2N3700 and 2N3701 NPN SILICON TRANSISTOR
2N3700 2N3701
SYMBOL
fT VCE=10V, IC=50mA, f=20MHz 100 400 80 400 MHz
Cob VCB=10V, IE=0, f=1.0MHz 12 12 pF
Cib VBE=0.5V, IC=0, f=1.0MHz 60 60 pF
h
fe
rb’Cc VCB=10V, IE=10mA, f=4.0MHz 25 400 25 400 ps
NF VCE=10V, IC=100µA, f=1.0KHz, RS=1.0KΩ 4.0 4.0 dB
TEST CONDITIONS MIN MAX MIN MAX UNITS
VCE=5.0V, IC=1.0mA, f=1.0KHz 80 400 30 200
TO-18 PACKAGE - MECHANICAL OUTLINE
A
DIMENSIONS
INCHES MILLIMETERS
MIN MAX MIN MAX
0.100 2.54
0.050 1.27
TO-18 (REV: R1)
LEAD #2
LEAD #1
I
45°
C
B
SYMBOL
D
E
F
A (DIA) 0.209 0.230 5.31 5.84
B (DIA) 0.178 0.195 4.52 4.95
C - 0.030 - 0.76
D 0.170 0.210 4.32 5.33
E 0.500 - 12.70 F (DIA) 0.016 0.019 0.41 0.48
G (DIA)
H
I 0.036 0.046 0.91 1.17
J 0.028 0.048 0.71 1.22
G
H
LEAD #3
J
LEAD CODE:
1) Emitter
2) Base
3) Collector
R1
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