Datasheet 2N3700 Datasheet (SGS Thomson Microelectronics)

Page 1
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The 2N3700 is a silicon planar epitaxial NPN tran­sistorin JedecTO-18metalcase,intended forsmall signal, low noise industrial applications.
2N3700
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE M AXI MUM RAT IN GS
Symbol Parameter Value Unit
CBO
V
CEO
V
EBO
I
P
T
stg,Tj
C
tot
Collector-base Voltage (IE=0) 140 V Collector-emitter Voltage (IB=0) 80 V Emitter-base Voltage (IC=0) 7 V Collector Current 1 A Total Power Dissipation at T
at T at T
Storage and Junction Temperature – 65 to 200 °C
amb case case
25 °C
25 °C100 °C
0.5
1.8 1
W W W
January 1989
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2N3700
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
amb
Max Max
=25°C unless otherwise specified)
97
350
°C/W °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EB O
V
CE(sat )
V
BE(sat)
h
FE
h
fe
f
T
C
EBO
C
CBO
r
bb’Cb’c
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector Cutoff Current (IE=0) VCB=90V
VCB=90V T
amb
=150°C
10
10 Emitter Cutoff Current (IC=0) VEB=5V 10 nA Collector-base Breakdown
Voltage (IE=0)
* Collector-emitter Breakdown
Voltage (I
B
=0)
Emitter-base Breakdown Voltage (I
=0)
C
* Collector-emitter Saturation
Voltage
I
=100µA 140 V
C
=30mA 80 V
I
C
=100µA7V
I
E
IC=150mA IC=500mA
IB=15mA IB=50mA
0.2
0.5
* Base-emitter Saturation Voltage IC= 150 mA IB= 15 mA 1.1 V
* DC Current Gain
I
= 0.1 mA
C
IC=10mA I
=150mA
C
IC=500mA I
=1A
C
IC=150mA T
=– 55°C
amb
Small Signal Current Gain IC=1mA
f = 1 kHz
Transition Frequency IC=50mA
f = 20 MHz
Emitter-base Capacitance IC=0
f=1MHz
Collector-base Capacitance IE=0
f=1MHz
Feedback Time Constant IC=10mA
f=4MHz
V
=10V
CE
VCE=10V V
=10V
CE
VCE=10V V
=10V
CE
VCE=10V
VCE=5V
VCE=10V
VEB= 0.5 V
VCB=10V
VCB=10V
50 90
100
300 50 15
40 80 400
100 MHz
60 pF
12 pF
25 400 ps
nA µA
V V
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Page 3
TO-18 MECHANICAL DATA
2N3700
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
G
I
H
DA
F
E
L
B
C
0016043
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2N3700
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such informationnor forany infringementof patents or other rights of third parties which may results from its use. No license is granted byimplication or otherwiseunder anypatent orpatent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproductsarenot authorizedforuse as criticalcomponentsinlife supportdevices or systems without express written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - Hong Kong -Italy - Japan - Korea - Malaysia -Malta - Morocco - The Netherlands -
Singapore -Spain - Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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