Datasheet 2N3553 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

2N3553

Silicon planar epitaxial
overlay transistor

Product specification
Supersedes data of October 1981
File under Discrete Semiconductors, SC08a

1995 Oct 27

Philips Semiconductors Product specification

Silicon planar epitaxial
overlay transistor

APPLICATIONS

• The 2N3553 is intended for use in VHF and UHF
transmitting applications.

PINNING - TO-39/3

PIN DESCRIPTION

1 emitter
2 base
3 collector

2N3553

DESCRIPTION

The device is a silicon NPN overlay transistor in a TO-39
metal package with the collector connected to the case.

handbook, halfpage

1

2

3

Fig.1 Simplified outline.

MBB199

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V
V
I
P
T
f

CEX
CEO

CM

tot
j

T

collector-emitter voltage IC≤ 200 mA; VBE= −1.5 V 65 V
collector-emitter voltage open base; IC≤ 200 mA 40 V
peak collector current 1.0 A
total power dissipation up to Tmb=25°C 7.0 W
junction temperature 200 °C
transition frequency IC= 125 mA; VCE= 28 V 500 −

RF performance

f

(MHz)

V

(V)

CE

P

(W)

o

G

p

(dB)

η

(%)

175 28 2.5 >10 >50

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1995 Oct 27 2

Philips Semiconductors Product specification

Silicon planar epitaxial

2N3553

overlay transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEX

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

collector-base voltage open emitter − 65 V
collector-emitter voltage IC≤ 200 mA; VBE= −1.5 V − 65 V
collector-emitter voltage open base; IC≤ 200 mA − 40 V
emitter-base voltage open collector − 4V
collector current (DC) − 0.35 A
peak collector current − 1A
total power dissipation up to Tmb=25°C − 7W
storage temperature −65 +200 °C
junction temperature − 200 °C

thermal resistance from junction to mounting base 25 K/W

10

handbook, halfpage

I

C

(A)

1

-1

10

-2

10

1

(1) All frequencies, including DC.
(2) f ≥ 1 MHz.
(3) Allowed during switching off, provided the transistor is cut-off

≤−1.5 V; RBE≥ 33 Ω; IC≤ 200 mA and the transient

with V

BB

energy ≤ 0.5 mW.

(1)

10

VCE (V)

MGC928

(2)

(3)

Fig.2 DC SOAR.

10

handbook, halfpage

P

tot

(W)

5

2

10

0

0

100 200

Tmb (

MGC927

o

C)

Fig.3 Power derating curve.

1995 Oct 27 3

Philips Semiconductors Product specification

Silicon planar epitaxial

2N3553

overlay transistor

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)CEX

V

(BR)EBO

V

BE

V

CEsat

I

CEO

h

FE

f

T

Rho

ie

C

c

collector-base breakdown voltage open emitter; IC= 0.25 mA 65 −−V
collector-emitter breakdown voltage open base; IC up to 200 mA;

40 −−V

note 1

collector-emitter breakdown voltage IC up to 200 mA; VBE= −1.5 V;

65 −−V

RB=33Ω; note 1
emitter-base breakdown voltage open collector; IE= 0.25 mA 4 −−V
base-emitter voltage IC= 250 mA; VCE=5V −−1.5 V
collector-emitter saturation voltage IC= 250 mA; IB=50mA −−1.0 V
collector leakage current open base; VCE=30V −−0.1 mA
DC current gain VCE=5V; IC= 125 mA 15 − 200

=5V; IC= 250 mA 10 − 100

V

CE

transition frequency IC= 125 mA; VCE=28V − 500 − MHz

) real part of input impedance IC= 125 mA; VCE=28V;

−−20 Ω

f = 200 MHz
collector capacitance VCB= 28 V; IE=ie=0;

−−10 pF

f=1MHz

Note

1. Pulsed through an inductor of 25 mH; δ = 0.5; f = 50 Hz.

60

handbook, halfpage

h

FE

40

20

0

0 100 200 300 400

MGC935

500

IC (mA)

20

handbook, halfpage

C

c

(pF)

15

10

5

0

0204060

MGC930

VCB (V)

Fig.4 DC current gain as a function of collector

current; typical values.

1995 Oct 27 4

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

Philips Semiconductors Product specification

Silicon planar epitaxial

2N3553

overlay transistor

APPLICATION INFORMATION

RF performance at T

f

(MHz)

175 28 2.5 >10 >50

Ruggedness

The transistor is capable of withstanding a load mismatch corresponding to VSWR=3:1 varied through all phases,
under the conditions: V

handbook, full pagewidth

=25°C.

mb

V

CE

(V)

= 28 V; f = 175 MHz; Tmb=25°C; Po= 2.5 W.

CE

P

(W)

o

+V

CC

G

(dB)

p

η

(%)

input
50 Ω

(1) The length of the external emitter wire is 1.6 mm.

C1

L3

L1

C2

DUT

(1)

L2

Fig.6 Test circuit at 175 MHz.

C5

C3

output

L4

C4

50 Ω

MGC926

1995 Oct 27 5

Philips Semiconductors Product specification

Silicon planar epitaxial

2N3553

overlay transistor

List of components (see Fig.6)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C2, C3, C4 air trimmer capacitor 4 to 29 pF
C5 polyester capacitor 10 nF
L1 1 turn 1.0 mm copper wire int. diameter 10 mm;

leads 2 × 10 mm

L2 Ferroxcube choke coil Z = 550 Ω±20%;

f = 175 MHz

L3 15 turns enamelled 0.7 mm

copper wire

L4 3 turns enamelled 1.5 mm

copper wire

600

handbook, halfpage

f

T

(MHz)

MGC937

10

handbook, halfpage

P

o

(W)

int. diameter 4 mm;
closely wound

int. diameter 12 mm;
leads 2 × 20 mm;
closely wound

(1)

(2)

(3)

4312 020 36640

MGC929

(1)
(2)

400

200

0

Tj=25°C.
(1) VCE=28V.
(2) VCE=14V.
(3) VCE=7V.

100 200 300 400

(3)

IC (mA)

Fig.7 Transition frequency as a function of

collector current; typical values.

(4)

5

(5)

0

0

VCE= 28 V; Tmb=25°C.
(1) Pi= 0.5 W.
(2) Pi= 0.375 W.
(3) Pi= 0.25 W.

200100 400300

(4) Pi= 0.1 W.
(5) Pi= 0.05 W.

f(MHz)

Fig.8 Output power as a function of frequency;

typical values.

1995 Oct 27 6

Philips Semiconductors Product specification

Silicon planar epitaxial
overlay transistor

PACKAGE OUTLINE

handbook, full pagewidth

0.86
max

1.0

max

o

45

9.4 max

5.08

2N3553

1

2

8.5

max

3

6.6

max

12.7 min

0.51
max

MSA241

Dimensions in mm.

Fig.9 TO-39.

1995 Oct 27 7

Philips Semiconductors Product specification

Silicon planar epitaxial

2N3553

overlay transistor

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Oct 27 8