Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3448
DESCRIPTION
·With TO-3 package
·Excellent Safe Operating Area
APPLICATIONS
·Designed for medium-switching
and amplifier applications.
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7.5 A
PC Collector power dissipation TC=25℃ 115 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
(th) jc
Thermal resistance junction to case 1.17 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3448
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V
Collector-emitter saturation voltage I
Collector-emitter saturation voltage I
Base-emitter on voltage I
=5A IB=0.5A 1.2 V
C
=7A IB=1.5A 3.0 V
C
=5A ; VCE=5V 1.8 V
C
Collector cut-off current VCE=80V; IB=0 0.7 mA
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
hFE DC current gai n IC=5A ; VCE=5V 50 120
fT Transition frequency IC=0.5A ; VCE=10V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3448
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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