Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3446
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·Designed for medium-switching
and amplifier applications.
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7.5 A
PC Collector power dissipation TC=25℃ 115 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.17 ℃/W
th j-c
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3446
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat-1
V
CEsat-2
VBE Base-emitter on voltage IC=3A ; VCE=5V 1.5 V
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V
Collector-emitter saturation voltage IC=3A; IB=0.3A 1.2 V
Collector-emitter saturation voltage IC=7A;IB=1.5A 3.0 V
Collector cut-off current VCE=100V; IB=0 0.7 mA
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=3A ; VCE=5V 20 60
DC current gain IC=7A ; VCE=5V 4
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3446
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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