Page 1
1
Motorola Bipolar Power Transistor Device Data
NPN silicon power transistor designed for applications in industrial and commercial
equipment including high fidelity audio amplifiers, series and shunt regulators and
power switches.
• Collector –Emitter Sustaining Voltage —
V
CEO(sus)
= 140 Vdc (Min)
• Excellent Second Breakdown Capability
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
140
Vdc
Collector–Base Voltage
V
CB
160
Vdc
Emitter–Base Voltage
V
EB
7.0
Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
10
15**
Adc
Base Current — Continuous
Peak
I
B
7.0
—
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
P
D
117
0.67
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–65 to +200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.5
_
C/W
*Indicates JEDEC Registered Data.
**This data guaranteed in addition to JEDEC registered data.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3442/D
Motorola, Inc. 1995
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
Page 2
2N3442
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 200 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CEO(sus)
140
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEO
—
200
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc)
(VCE = 140 Vdc, V
BE(off)
= 1.5 Vdc, TC = 150_C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
CEX
—
—
5.0
30
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
I
EBO
—
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
FE
20
7.5
70
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
CE(sat)
—
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
V
BE(on)
—
5.7
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 2.0 Adc, VCE = 4.0 Vdc, f
test
= 40 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
f
T
80
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
kHz
Small–Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
h
fe
12
72
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
*Indicates JEDEC Registered Data.
NOTES:
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.
2. fT = |hfe| • f
test
1.0
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
/P
D(MAX)
, POWER DISSIPATION (NORMALIZED)
0.8
0.6
0.4
0.2
P
D
Page 3
2N3442
3
Motorola Bipolar Power Transistor Device Data
ACTIVE REGION SAFE OPERATING AREA INFORMATION
There are two limitations on the power–handling ability of
a transistor: average j unction temperature and second
breakdown. Safe operating area curves indicate IC – V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 200_C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
20
2.0
Figure 2. 2N3442
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.2
5.0 20 100 200
I
C
, COLLECTOR CURRENT (AMP)
CURRENT LIMIT
THERMAL LIMIT @ TC = 25
°
C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
dc
1.0 ms
10 µs
0.5
0.3
3.0 7.0 10 30 50 70
30 µs
50 µs
100 µs
TJ = 200°C
100 ms
TS)
400
0.1
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
4.0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
40
20
100
60
h
FE
, DC CURRENT GAIN
TJ = 150°C
25°C
–55°C
VCE = 4.0 V
6.0
10
200
7.0
Figure 4. Collector–Saturation Region
1.4
2.0
IB, BASE CURRENT (mA)
0
5.0 10 20 50 100 200 500 1.0k 2.0 k
1.0
0.8
0.6
0.4
IC = 1.0 A
TJ = 25°C
4.0 A 8.0 A
1.2
0.2
2.0 A
, COLLECTOR–EMITTER VOLTAGE (VOL
CE
V
Page 4
2N3442
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
A
N
E
C
K
–T–
SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
U
L
G
B
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
How to reach us:
USA /EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
2N3442/D
*2N3442/D*
◊
Loading...