Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3237
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For power amplifier and switching
circuits applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 20 A
IB Base current 7.5 A
PD Total power dissipation TC=25℃ 200 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 90 V
Collector-emitter voltage Open base 90 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 0.875 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3237
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-emitter sustaining voltage IC=0.2A ;IB=0 90 V
Collector-emitter saturation voltage I
Collector-emitter saturation voltage I
Base-emitter on voltage I
=10A; IB=1.0A 1.4 V
C
=20A ;IB=4.0A 4.0 V
C
=10A ; VCE=4V 2.2 V
C
Collector cut-off current VCE=45V; IB=0 1.0 mA
Collector cut-off current VCB=90V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=4V 40
DC current gain IC=10A ; VCE=4V 15 60
DC current gain IC=20A ; VCE=4V 5
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3237
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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