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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3235
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·Designed for general–purpose switching
and amplifier applications.
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 15 A
IB Base current 7 A
PC Collector power dissipation TC=25℃ 115 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 65 V
Collector-emitter voltage Open base 55 V
Emitter-base voltage Open collector 7 V
T
stg
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
(th) jc
Thermal resistance junction to case 1.52 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3235
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.2A ;IB=0 55 V
Collector-emitter saturation voltage I
Collector-emitter saturation voltage I
Base-emitter on voltage I
=4A ;IB=0.4A 1.1 V
C
=10A ;IB=3.3A 3.0 V
C
=5A ; VCE=5V 1.5 V
C
Collector cut-off current VCE=30V; IB=0 0.7 mA
Collector cut-off current VCB=65V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=5A ; VCE=5V 20 70
DC current gain IC=10A ; VCE=5V 5
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3235
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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