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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3234
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For audio amplifier and power
switching applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7.5 A
PC Collector power dissipation TC=25℃ 115 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 160 V
Collector-emitter voltage Open base 160 V
Emitter-base voltage Open collector 7 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
(th) jc
Thermal resistance junction to case 1.17 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3234
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(sat)
V
BE(on)
I
CEO
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=30mA ;IB=0 160 V
Collector-emitter saturation voltage I
Base-emitter on voltage I
=5A ;IB=0.5A 1.0 V
C
=3A ; VCE=4V 1.5 V
C
Collector cut-off current VCE=80V; IB=0 0.7 mA
Collector cut-off current VCB=160V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
hFE DC current gai n IC=5A ; VCE=10V 18 55
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3234
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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