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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3226
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For power amplifier and switching
circuits applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
PD Total power dissipation TC=25℃ 75 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 35 V
Collector-emitter voltage Open base 35 V
Emitter-base voltage Open collector 5 V
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
(th) jc
Thermal resistance junction to case 1.17 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3226
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.2A ;IB=0 35 V
Collector-emitter saturation voltage I
Collector-emitter saturation voltage I
Base-emitter on voltage I
=3A; IB=0.3A 1.0 V
C
=5A ;IB=1.0A 2.0 V
C
=3A ; VCE=4V 2.0 V
C
Collector cut-off current VCE=35V; IB=0 1.0 mA
Collector cut-off current VCB=35V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=4V 40
DC current gain IC=3A ; VCE=4V 20
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2N3226
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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