Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N3196
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter -60 V
CBO
V
Collector-emitter voltage Open base -60 V
CEO
V
Emitter-base voltage Open collector -5 V
EBO
IC Collector current -5 A
PC Collector power dissipation TC=25℃ 75 W
Tj Junction temperature 150 ℃
T
stg
Storage temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
(th) jc
Thermal resistance junction to case 1.17 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N3196
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)
V
BE(on)
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -60 V
Collector-emitter saturation voltage I
Base-emitter on voltage I
Collector cut-off current VCE=Rated V
Collector cut-off current VCB=Rated V
=-5A; IB=-1A -1.5 V
C
=-5A ; VCE=-4V -2.0 V
C
; IB=0 -5.0 mA
CEO
; IE=0 -0.1 mA
CBO
Emitter cut-off current VEB=-5V; IC=0 -1.0 mA
DC current gain IC=-0.3A ; VCE=-4V 30
DC current gain IC=-3A ; VCE=-4V 15
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2N3196
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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