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Silicon Power Transistor
2N3055H
Technical Data
Typical Applications : These devices are designed for general purpose switching
and amplifier applications.
Specification Fetaures :
F Complementary NPN Silicon Power Transistor
F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package
F 115 Watts device
F Excellent safe operating area
Symbol Parameters / Conditions Ratings
Maximum Ratings :
V
CEO
Collector- Emitter Voltage 100 Vdc
V
V
V
I
I
C
B
CER
CB
EB
Collector- Emitter Voltage 70 Vdc
Collector - Base Voltage 100 Vdc
Emitter Base Voltage 7 Vdc
Collector Current – Continuos 15 Adc
Base Current 7 Adc
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Thermal Characteristics :
BE
=
CE
=
CE
= 100 Vdc , V
BE(off)
= 1.5
CE
= 100 V, V
BE(off)
= 1.5 Vdc ,
R
thjc
P
D
Tj & T
Stg
Thermal resistance junction to case 1.52 °C/W
Total Power Dissipation @ Tc = 25 °C
Derate above 25 °C
Operating and Storage Junction Temperature Range
115 Watta
0.657 W /°C
-65 °C ….+ 200 °C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
Collector – Emitter Sustaining
Voltage [ Ic = 200 mAdc , IB = 0 ]
Collector – Emitter Sustaining
Voltage [ Ic = 200 mAdc , R
100 Ohms ]
Collector Cutoff Current [ V
30 Vdc , IB = 0 ]
Collector Cutoff Current
[ V
Vdc ]
[ V
Tc = 150 °C ]
Emitter Base Leakage
[ VEB = 7 Vdc , Ic = 0 ]
V
CEX(sus)
V
CER(sus)
I
CEO
I
CEX
I
EBO
60 Vdc
70 Vdc
0.7 mAdc
1
5
5 mAdc
mAdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
DC Current Gain
[ Ic = 4 Adc , VCE = 4 Vdc ]
[ Ic = 10 Adc , VCE = 4 Vdc ]
Collector-Emitter Saturation
V
h
FE
CE(sat)
20
5
70
Voltage
[ Ic = 4 Adc , IB = 400 mAdc ]
[ Ic = 10 Adc , IB = 3.3 Adc ]
Base-Emitter on Voltage
[ Ic = 4 Adc , VCE = 4 Vdc ]
V
BE(on)
1.1
3
1.5
Vdc
Vdc
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Dynamic Characteristics :
C
= 0.5 Adc , VCE = 10 Vdc , f =
C
= 1 Adc , VCE = 4 Vdc , f = 1
C
= 1 Adc , VCE = 4 Vdc , f = 1
CE
= 40
Current Gain – Bandwidth Product
[ I
1 MHz ]
Small signal current gain
[ I
KHz ]
Small signal current gain cutoff
frequency
[ I
KHz ]
Second Breakdown Characteristics :
Second Breakdown Collector
Current with Base Forward Biased
t = 1 s [non-repetitive ] , V
Vdc
f
T
h
fe
f
hfe
I
S/b
2.5 MHz
15 120
10 KHz
2.87 Adc
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