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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N3054
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation-
: PC= 25W @TC= 25℃
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER VALUE UNIT
V
CBO
V
CEV
V
CER
V
CEO
V
EBO
IC Collector Current-Continuous 4 A
IB Base Current-Continuous 2 A
PC Collector Power Dissipation@TC=25℃
TJ Junction Temperature 200 ℃
T
stg
Collector-Base Voltage 90 V
Collector-Emitter Voltage 90 V
Collector-Emitter Voltage 60 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 7 V
25 W
Storage Temperature -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 7.0 ℃/W
PARAMETER MAX UNIT
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2N3054
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CER
V
CE
(sat)
V
CE
(sat)
V
BE(on)
I
CEO
I
CEV
I
EBO
h
FE-1
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 55 V
Collector-Emitter Sustaining Voltage IC= 500mA; RBE= 100Ω 60 V
Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V
-1
Collector-Emitter Saturation Voltage IC= 3A; IB= 1A 6.0 V
-2
Base-Emitter On Voltage IC= 0.5A; VCE= 4V 1.7 V
Collector Cutoff Current VCE= 30V; IB= 0 0.5 mA
Collector Cutoff Current
Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA
DC Current Gain IC= 0.5A ; VCE= 4V 25 150
PARAMETER CONDITIONS MIN MAX UNIT
VCE= 90V; V
VCE= 90V; V
= 1.5V
BE(off)
= 1.5V,TC=150℃
BE(off)
1.0
6.0
mA
h
DC Current Gain IC= 3A; VCE= 4V 5
FE-2
fT Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V; f=1.0MHz 3 MHz
isc Website：www.iscsemi.cn
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