Page 1
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
SEME
2N3019CSM
HIGH FREQUENCY, NPN
TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS AVAILABLE
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
For high reliablitity general purpose
applications requiring small size and low
weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50°C
R
ja
Thermal Resistance Junction to Ambient
T
j
Max Junction Temperature
T
stg
Storage Temperature
140V
80V
7V
1A
350mW
2.00mW / °C
350°C / W
200°C
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC (CSM)
LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Page 2
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
SEME
2N3019CSM
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
IC= 10mA
IC= 10µA
IE= 10µA IC= 0
VCB= 90V VBE= 0
VCB= 90V VBE= 0
T
amb
= 150°C
VEB= 5V
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 0.1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 500mA VCE= 10V
IC= 1A VCE= 10V
IC= 150mA VCE= 0.5V
V
CEO*
Collector – Emitter Voltage
V
(BR)CBO*
Collector – Base Breakdown Voltage
V
(BR)EBO*
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
= –55°C
80
140
7
10
10
10
0.20
0.50
1.1
50
90
100 300
50
15
40
V
V
V
nA
µA
nA
V
V
—
f
T
Transition Frequency
C
EBO
Capacitance
C
CBO
Input Capacitance
h
fe
Small Signal Current Gain
NF Noise Figure
IC= 50mA VCE= 10V f = 20MHz
VEB= 0.5V IC= 0 f = 1.0MHz
VCB= 10V IE= 0 f = 1.0MHz
IC= 1mA VCE= 5V f = 1kHz
IC= 100µA VCE= 10V f = 1kHz
Rg= 1KΩ
100
60
12
80 400
4
MHz
pF
pF
—
db
t* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Loading...