HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS
DESCRIPTION
The 2N3019 is a silicon planar epitaxial NPN
transistors in Jedec TO-39 metal case, designed
for high-current, high frequency amplifier
application. It feature high gain and low satur ation
voltage.
2N3019
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) 140 V
CBO
Collector-Emitter Voltage (IB = 0) 80 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 1 A
I
C
Total Dissipation at T
tot
at T
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
amb
case
≤ 25 oC
≤ 25 oC
0.8
5
W
W
o
C
o
C
November 1997
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2N3019
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
35
219
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
Collector-Base
= 90 V
V
CB
V
= 90 V T
CB
= 5 V 10 nA
V
EB
I
= 100 µA 140 V
C
= 150 oC
case
10
10
Breakdown Voltage
(IE = 0)
V
(BR)CEO
∗ Collector-Emitter
I
= 10 mA 80 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
I
= 100 µA7V
E
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 150 mA IB = 15 mA
I
= 500 mA IB = 50 mA
C
0.2
0.5
IC = 150 mA IB = 15 mA 1.1 V
Saturation Voltage
∗ DC Current Gain IC = 0.1 mA VCE = 10 V
h
FE
h
∗ Small Signal Current
fe
I
= 10 mA VCE = 10 V
C
I
= 150 mA VCE = 10 V
C
I
= 500 mA VCE = 10 V
C
I
= 1A VCE = 10 V
C
I
= 150 mA VCE = 10 V
C
T
= -55 oC
amb
IC = 1 mA VCE = 5 V f = 1KHz 80 400
50
90
100
50
15
40
300
Gain
f
C
CBO
Transition Frequency IC = 50 mA VCE = 10 V f = 20MHz 100 MHz
T
Collector Base
IE = 0 VCB = 10 V f = 1MHz 12 pF
Capacitance
C
EBO
Emitter Base
IC = 0 VEB = 0.5 V f = 1MHz 60 pF
Capacitance
NF Noise Figure I
r
Feedback Time
bb’ Cb’c
= 0.1 mA VCE = 10 V
C
f = 1KHz R
= 1KΩ
g
IC = 10 mA VCE = 10 V f = 4MHz 400 ps
4dB
Constant
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
nA
µA
V
V
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TO-39 MECHANICAL DATA
2N3019
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B0.490.019
D6.60.260
E8.50.334
F9.40.370
G 5.08 0.200
H1.20.047
I0.90.035
L45
mm inch
o
(typ.)
H
G
D A
I
E
F
L
B
P008B
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2N3019
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroele cton ics.
© 1997 SGS-THOMSON Microelectronics - Printed in Ita ly - All Rig hts Rese rved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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