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2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N2904U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=50nA(Max.), IBL=50nA(Max.)
@V
CE
=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: C
ob
=4pF(Max.) @VCB=5V.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A1
1.3 0.1A1
5
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
1
1
2
2
2
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
200 mA
Base Current
I
B
50 mA
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
654
Q1 Q2
1
23
456
Lot No.
Type Name
Z A
123
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2008. 9. 23 2/4
2N2904U
Revision No : 1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=30V, VEB=3V
- - 50 nA
Base Cut-off Current
I
BL
VCE=30V, VEB=3V
- - 50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
60 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEOIC
=1mA, IB=0
40 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6.0 - - V
DC Current Gain *
hFE(1) VCE=1V, IC=0.1mA
40 - -
hFE(2) VCE=1V, IC=1mA
70 - -
hFE(3) VCE=1V, IC=10mA
100 - 300
hFE(4) VCE=1V, IC=50mA
60 - -
hFE(5) VCE=1V, IC=100mA
30 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=10mA, IB=1mA
- - 0.2
V
V
CE(sat)
2 IC=50mA, IB=5mA
- - 0.3
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=10mA, IB=1mA
0.65 - 0.85
V
V
BE(sat)
2 IC=50mA, IB=5mA
- - 0.95
Transition Frequency
f
T
VCE=20V, IC=10mA, f=100MHz
300 - - MHz
Collector Output Capacitance
C
ob
VCB=5V, IE=0, f=1MHz
- - 4.0 pF
Input Capacitance
C
ib
VBE=0.5V, IC=0, f=1MHz
- - 8.0 pF
Input Impedance
h
ie
VCE=10V, IC=1mA, f=1kHz
1.0 - 10
k
Voltage Feedback Ratio
h
re
0.5 - 8.0 x10
-4
Small-Signal Current Gain
h
fe
100 - 400
Collector Output Admittance
h
oe
1.0 - 40
Noise Figure NF
VCE=5V, IC=0.1mA Rg=1k ,
- - 5.0 dB
Switching Time
Delay Time
t
d
- - 35
nS
Rise Time
t
r
- - 35
Storage Time
t
stg
- - 200
Fall Time
t
f
- - 50
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
10kΩ
V
in
-0.5V
V
in
10.9V
-9.1V
10.9V
300ns
10kΩ
1N916
or equiv.
20µs
V =3.0V
CC
0
t ,t < 1ns, Du=2%
r
f
V =3.0V
CC
0
t ,t < 1ns, Du=2%
rf
275Ω
275Ω
V
C
Total< 4pF
V
C
Total< 4pF
out
out
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2008. 9. 23 3/4
2N2904U
Revision No : 1
100
COMMON EMITTER
(mA)
C
Ta=25 C
80
60
40
20
COLLECTOR CURRENT I
0
0
1234
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
10
5
(V)
3
IC - V
BE(sat)
- I
CE
1
I =0.1mA
B
C
COMMON EMITTER
I /I =10
CE
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT IC (mA)
1
COMMON EMITTER
I /I =10
C
B
(V)
0.5
0.3
hFE - I
Ta=125 C
Ta=25 C
Ta=-55 C
310.30.1
V
CE(sat)
C
COMMON EMITTER
V =1V
CE
10 30 100 300
- I
C
BE(sat)
1
0.5
0.3
VOLTAGE V
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 3 10
Ta=-55 C
Ta=25 C
Ta=125 C
COLLECTOR CURRENT IC (mA)
IC - V
200
COMMON EMITTER
160
120
V =1V
CE
80
Ta=125 C
40
Ta=25 C
0
0
0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE VBE (V)
(mA)
C
COLLECTOR CURRENT I
30 100 300
BE
Ta=55 C
CE(sat)
0.1
0.05
0.03
VOLTAGE V
Ta=125 C
Ta=25 C
Ta=-55 C
0.01
0.1 0.3 1
COLLECTOR-EMITTER SATURATION
31030100
COLLECTOR CURRENT IC (mA)
VCE - I
(V)
1.0
CE
0.8
C
0.6
I =1mA
0.4
0.2
COMMON
EMITTER
Ta=25 C
0
0.001 0.1 1 10
0.01
I =10mA
B
C
C
I =30mA
COLLECTOR-EMITTER VOLTAGE V
BASE CURRENT IB (mA)
C
I =100mA
300
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2008. 9. 23 4/4
2N2904U
Revision No : 1
50
30
(pF)
ib
, C
ob
10
5
3
1
CAPACITANCE C
0.5
REVERSE VOLTAGE VCB, VEB (V)
Cob - VCB, Cib - V
C
ib
C
ob
310.30.1
EB
f=1MHz
Ta=25 C
10 30
Pc - Ta
(mW)
250
C
200
150
100
50
0
0
25 50 75 100 125 150
COLLECTOR POWER DISSIPATION P
AMBIENT TEMPERATURE Ta ( C)
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