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120101
TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices Qualified Level
2N2060
2N2060L
MAXIMUM RATINGS
Ratings Symbol 2N2060 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
One
Total Power Dissipation @ TA = +250C
@ TC = +250C
Operating & Storage Junction Temperature Range
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
(1)
(2)
V
CEO
V
CBO
V
EBO
IC
Section
PT
T
T
,
J
stg
60 Vdc
100 Vdc
7.0 Vdc
500 mAdc
Both
Sections
540
1.5
-65 to +200
600
2.12
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
RBE ≤ 10 Ω, IC = 10 mAdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 80 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
(3)
V
V
(BR)
(BR)
I
CBO
I
EBO
CER
CEO
mW
W
0
C
*See appendix A for
package outline
80 Vdc
60 Vdc
JAN
JANTX
JANTXV
TO-78*
10
2.0
10
2.0
µAdc
ηAdc
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
= 10 µAdc, V
C
I
= 100 µAdc, V
C
I
= 1.0 mAdc, V
C
I
= 10 mAdc, V
C
= 5.0 Vdc
CE
= 5.0 Vdc
CE
= 5.0 Vdc
CE
= 5.0 Vdc
CE
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
IC = 50 mAdc, V
Small-Signal Short-Circuit Input Impedance
I
= 1.0 mAdc, V
C
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I
= 1.0 mAdc, V
C
Small-Signal Short-Circuit Input Impedance
I
= 1.0 mAdc, V
C
Small-Signal Open-Circuit Output Admittance
I
= 1.0 mAdc, V
C
Input Capacitance
VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
(3)Pulse Test: Pulse Width 250 to 350µs, Duty Cycle ≤ 2.0%.
= 10 Vdc, f = 20 MHz
CE
= 5.0 Vdc, f = 1.0 kHz
CB
= 5.0 Vdc, f = 1.0 kHz
CE
= 5.0 Vdc, f = 1.0 kHz
CE
= 5.0 Vdc, f = 1.0 kHz
CE
V
V
h
hFE
CE(sat)
BE(sat)
fe
hib
hfe
hie
hoe
C
ibo
C
obo
25
30
40
50
0.3 Vdc
0.9 Vdc
3 25
20 30
75
90
120
150
Ω
50 150
1,000 4,000
0 16
85 pF
15 pF
Ω
µmhos
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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