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120101
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893
2N1893S
MAXIMUM RATINGS
Ratings Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (R
Collector Current I
Total Power Dissipation @ TA = +250C
@ TC = +250C
Operating & Storage Junction Temperature Range
= 10 Ω)
BE
(1)
(2)
V
V
V
V
T
J
CEO
CBO
EBO
CER
C
PT
T
,
srg
All Devices Units
2N720A 2N1893, S
80 Vdc
120 Vdc
7.0 Vdc
100 Vdc
500 mAdc
0.5
1.8
-65 to +200
0.8
3.0
THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S Unit
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
R
θJC
97 58
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, R
Collector-Base Cutoff Current
VCB = 120 Vdc
VCB = 90 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
= 10 Ω
BE
V
(BR)
CEO
V
(BR)
CER
I
CBO
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
W
0
C
0
C/W
100
Qualified Level
JAN
JANTX
JANTXV
TO-18 (TO-206AA)*
2N720A
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
80
10
10
10
10
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Vdc
Vdc
µAdc
ηAdc
µAdc
ηAdc
Page 2
120101
2N720A; 2N1893; 2N1893S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
= 0.1 mAdc, V
C
I
= 10 mAdc, V
C
I
= 150 mAdc, V
C
= 10 Vdc
CE
= 10 Vdc
CE
= 10 Vdc
CE
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Voltage
IC = 150 mAdc, IB = 15 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
= 50 mAdc, V
C
= 10 Vdc, f = 20 MHz
CE
Small-Signal Short-Circuit Forward Current Transfer Ratio
V
V
CE
CE
=5.0 Vdc, I
=10 Vdc, I
= 1.0 mAdc
C
= 5.0 mAdc, f = 1.0 kHz
C
Small-Signal Short-Circuit Input Impedance
VCB = 10 Vdc, IC = 5.0 mAdc
Small-Signal Short-Circuit Output Admittance
VCB = 10 Vdc, IC = 5.0 mAdc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See Figure 3 of MIL-PRF-19500/182)
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
hFE
V
CE(sat)
V
BE(sat)
h
fe
hfe
hib
hob
C
obo
t
on + toff
20
35
40 120
5.0
1.3
Vdc
Vdc
3.0 10
35
45 100
4.0 8.0
0.5
2 15
30
Ω
µΩ
PF
ηs
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