Datasheet 2N1893 Datasheet (SGS Thomson Microelectronics)

GENERAL PURPOSE HIGH-VOLTAGETYPE

DESCRIPTIO N

The 2N1893 is a silicon planar epitaxial NPN tran­sistorinJedec TO-39metal case,designed for use
inhigh-performance amplifier,oscillator andswitch­ing circuits.

It provides greater voltage swings in oscillator and
amplifier circuits and more protection in inductive
switchingcircuits due toits 120 V collector-to-base
voltage rating.

Productsapproved to CECC50002-104 avail­able onrequest.

2N1893

TO-39

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXI MUM RATIN G S

Symbol Parameter Value Unit

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

tot

T

stg,Tj

Collector-base Voltage (IE=0) 120 V
Collector-emitter Voltage (RBE≤ 10 Ω)100V
Collector-emitter Voltage (IB=0) 80 V
Emitter-base Voltage (IC=0) 7 V
Collector Current 0.5 A
Total Power Dissipation at T

at T
at T

Storage and Junction Temperature – 65 to 200 °C

amb
case
case

≤ 25 °C

≤ 25 °C
≤ 100 °C

0.8
3

1.7

W
W
W

October 1988

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2N1893

THERMAL DATA

R

th j-case

R

th j-amb

ELECTRICAL CHARACTERISTICS (T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient

amb

Max
Max

=25°C unless otherwise specified)

58

219

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

I

EBO

V

(BR) CBO

V

(BR)CER

V

(BR)CEO

V

(BR) EBO

V

CE (s at )

V

BE (sat)

h

FE

h

fe

f

T

C

EBO

C

CBO

* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

Collector Cutoff Current
(IE=0)

Emitter Cutoff Current
(IC=0)

Collector-base Breakdown
Voltage (IE=0)

* Collector-emitter Breakdown

Voltage (R

BE

≤ 10 Ω)

Collector-emitter Breakdown
Voltage (I

B

=0)

Emitter-base Breakdown
Voltage (IC=0)

* Collector-emitter Saturation

Voltage

* Base-emitter Saturation

Voltage

VCB=90V
VCB=90V T

V

=5V 10 nA

EB

I

=100µA 120 V

C

= 10 mA 100 V

I

C

=10mA 80 V

I

C

=100µA7 V

I

E

IC=50mA
IC=150mA

IC=50mA
IC=150mA

* DC Current Gain IC= 0.1 mA

IC=10mA
I

=150mA

C

IC=10mA
T

=–55°C

amb

Small Signal Current Gain IC=1mA

f = 1 kHz
I

=5mA

C

f = 1 kHz

Transition Frequency IC=50mA

f=20MHz

Emitter-base Capacitance IC=0

f = 1 MHz

Collector-base Capacitance IE=0

f = 1 MHz

10

=150°C

amb

IB=5mA
IB=15mA

IB=5mA
IB=15mA

V

=10V

CE

VCE=10V
V

=10V

CE

20
35
40

0.82

0.96
50

80
80

15

1.2
5

0.9

1.3

120

VCE=10V

20

V

=5V

CE

30

V

=10V

CE

45

V

= 10 V 50 70 MHz

CE

= 0.5 V 55 85 pF

V

EB

V

=10V 13 15 pF

CB

40

70
85

150

°C/W
°C/W

nA
µA

V
V

V
V

2/5

DC Current Gain. High-frequency Current Gain.

2N1893

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2N1893

TO39 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6 0.260

E 8.5 0.334

F 9.4 0.370

G 5.08 0.200

H 1.2 0.047

I 0.9 0.035

o

L45

(typ.)

4/5

I

H

G

F

L

DA

E

B

P008B

2N1893

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringementofpatents or other rights of third parties which may results from its use. No
license isgrantedby implication orotherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare not authorizedforuse as criticalcomponentsinlife supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

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