Datasheet 28LV010RT4FS25, 28LV010RT4FS20, 28LV010RT4FI25, 28LV010RT4FI20, 28LV010RT4FE25 Datasheet (MAXWELL)

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28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FEATURES:
• 3.3V low voltage operation 128K x 8 Bit EEPROM
•R
AD-PAK® radiation-hardened against natural space
radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL
> 84 MeV/mg/cm
TH
- SEUTH > 37 Mev/mg/cm2 (read mode)
-SEU saturated cross section = 3E-6 cm
- SEU
= 11.4 Mev/mg/cm2 (write mode)
TH
-SEU saturated cross section = 5E-3 cm hard errors
• Package:
- 32 Pin R
- 32 Pin R
AD-PAK® flat pack AD-PAK® DIP
- JEDEC-approved byte-wide pinout
• Address Access Time:
- 200, 250 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data retention
• Page write mode:
- 1 to 128 bytes
• Automatic programming
- 10 ms automatic page/byte write
• Low power dissipation
- 20 mW/MHz active current (typ.)
- 72 µW standby (maximum)
2
2
(read mode)
2
(write mode) with
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
I/O0 I/O7 RDY/Busy
I/O Buffer and
Input Latch
Y Gating
Memory Array
Data Latch
Logic Diagram
DESCRIPTION:
Maxwell Technologies’ 28LV010 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010 is capable of in-system electrical Byte and Page pro­grammability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data
Polling and a Ready/Busy signal to indicate the comple­tion of erase and programming operations. In the 28LV010, hardware data protection is provided with the RES tion to noise protection on the WE
signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications.
Maxwell Technologies' patented R
AD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack­age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R
AD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
Note:The recommended form of data protection during power on/off is to hold the RES
pin to VSS during power up and power down. This may be accompanied by connecting the RES to the CPU reset line. Failure to provide adequate protection during power on/off may result in lost or modified data.
pin, in addi-
Memory
pin
1000579
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1
Page 2
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 1. 28LV010 PINOUT DESCRIPTION
PIN SYMBOL DESCRIPTION
28LV010
12-5, 27, 26, 23, 25,
4, 28, 3, 31, 2
13-15, 17-21 I/O0 - I/O7 Input/Output
24
22
29
32 V
16 V
1 RDY/BUSY
30
A0-A16 Address
OE Output Enable
CE Chip Enable
WE Write Enable
CC
SS
RES Reset
TABLE 2. 28LV010 ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNIT
Supply Voltage (Relative to Vss) V
Input Voltage (Relative to Vss) V
Operating Temperature Range T
Storage Temperature Range T
Power Supply
Ground
Ready/Busy
CC
IN
OPR
STG
-0.6 7.0 V
1
-0.5
-55 125 °C
-65 150 °C
7.0 V
Memory
1. VIN min = -3.0 V for pulse width < 50 ns.
ICC1 ±10%
I
2 ±10%
CC
I
3A ±10%
CC
I
3B ±10%
CC
1000579
TABLE 3. DELTA LIMITS
PARAMETER VARIATION
12.19.01 Rev 3
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2
©2001 Maxwell Technologies
All rights reserved.
Page 3
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 4. 28LV010 RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNIT
28LV010
Supply Voltage V
Input Voltage
RES
_PIN
Operating Temperature Range T
min = -1.0 V for pulse width < 50 ns.
1. V
IL
2. V
min = 2.2 V for VCC = 3.6 V.
IH
TABLE 5. 28LV010 CAPACITANCE
(TA = 25°C, F = 1MHZ)
P
ARAMETER SYMBOL MIN MAX UNIT
OUT
1
= 0V
1
Input Capacitance: VIN = 0V
Output Capacitance: V
1. Guaranteed by design.
TABLE 6. 28LV010 DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ± 0.3, TA = -55 TO +125°C UNLESS OTHERWISE SPECIFIED)
3.0 3.6 V
1
-0.3
2
2.0
VCC-0.5
0.8 +0.3
V
CC
V
+1
CC
-55 +125 °C
V
V V V
OPR
CC
IL
IH
H
Memory
C
IN
C
OUT
-- 6 pF
-- 12 pF
P
ARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT
Input Leakage Current VCC = 3.6V, VIN = 3.6V I
Output Leakage Current V
Standby V
Operating V
Current CE = V
CC
Current I
CC
= 3.6V, V
CC
CC
CE = V
IH
= 0mA, Duty = 100%, Cycle = 1 µs @ VCC = 3.3V
OUT
I
= 0mA, Duty = 100%, Cycle = 250 ns @ VCC =
OUT
= 3.6V/0.4V I
OUT
3.3V
Input Voltage V
Output Voltage I
1. V
min = 2.2V for VCC = 3.6V.
IH
1000579
= 2.1 mA
OL
I
= -400 µA
OH
12.19.01 Rev 3
All data sheets are subject to change without notice
I I
I
V V
CC1
CC2
CC3
V
V
LI
LO
IL
IH
H
OL
OH
-- 2 µA
-- 2 µA
--
--
--
--
--
2.0
VCC-0.5
--
V
x0.8
CC
1
20
1
6
15
0.8
--
--
0.4
--
µA mA
mA
V
V
3
©2001 Maxwell Technologies
All rights reserved.
Page 4
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION
(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT
Address Access Time
-200
-250
Chip Enable Access Time
-200
-250
Output Enable Access Time
-200
-250
Output Hold to Address Change
-200
-250
Output Disable to High-Z
-200
-250
Output Disable to High-Z
-200
-250
to Output Delay
RES
-200
-250
2
3
CE = OE = VIL, WE = V
= VIL, WE = V
OE
= VIL, WE = VIH t
CE
= OE = VIL, WE = V
CE
= VIL, WE = VIH
CE CE
= OE = VIL, WE = V
= VIL, WE = VIH
CE CE
= OE = VIL, WE = V
= OE = VIL WE = V
CE
IH
IH
IH
IH
IH
IH
t
t
ACC
t
CE
OE
t
OH
t
DF
DFR
t
RR
1
ns
--
--
200 250
ns
--
--
200 250
ns 0 0
110 120
ns 0 0
0 0
50 50
--
--
ns
Memory
ns 0 0
300 350
ns 0 0
525 550
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
is defined as the time at which the output becomes an open circuit and data is no longer driven.
DFR
3. Guaranteed by design.
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©2001 Maxwell Technologies
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Page 5
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNIT
28LV010
Address Setup Time
-200
-250
Chip Enable to Write Setup Time (WE
-200
-250
Write Pulse Width (CE
controlled)
-200
-250
Write Pulse Width (WE
controlled)
-200
-250
Address Hold Time
-200
-250
Data Setup Time
-200
-250
Data Hold Time
-200
-250
Chip Enable Hold Time (WE
controlled)
-200
-250
Write Enable to Write Setup Time (CE
-200
-250
controlled)
controlled)
t
AS
t
CS
t
CW
t
WP
t
AH
t
DS
t
DH
t
CH
t
WS
0 0
0 0
200 250
200 250
125 150
100 100
10 10
0 0
0 0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
Memory
Write Enable Hold Time (CE
controlled)
-200
-250
Output Enable to Write Setup Tim
-200
-250
Output Enable Hold Time
-200
-250
Write Cycle Time
1,2
-200
-250
1000579
12.19.01 Rev 3
t
WH
t
OES
t
OEH
t
WC
All data sheets are subject to change without notice
0 0
0 0
0 0
--
--
--
--
--
--
--
--
15 15
©2001 Maxwell Technologies
ns
ns
ns
ms
5
All rights reserved.
Page 6
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNIT
28LV010
Byte Load Cycle
-200
-250
Data Latch Time
2
-200
-250
Byte Load Window
-200
-250
Time to Device Busy
-200
-250
Write Start Time
-200
-250
to Write Setup Time
RES
-200
-250
to RES Setup Time
V
CC
-200
-250
t
BLC
t
DL
2
2
2
t
t
t
BL
t
DB
DW
t
RP
RES
1 1
--
--
100 100
100 120
150 150
100 100
1 1
30 30
700 750
--
--
--
--
--
--
--
--
--
--
µs
ns
µs
ns
ns
Memory
µs
µs
must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the
1. t
WC
internal write operation within this value.
2. Guaranteed by design.
TABLE 9. 28LV010 MODE SELECTION
1,2
MODE CE OE WE RES RDY/BUSY I/O
Read V
Standby V
Write V
Deselect V
IL
IH
IL
IL
Write Inhibit X X V
XV
Data
Polling V
IL
Program X X X V
V
IL
V
IH
V
H
High-Z D
X X X High-Z High-Z
V
IH
V
IH
IL
V
IL
V
IL
V
IH
IH
V
H
V
H
High-Z --> V
OL
High-Z High-Z
X-- --
X X -- --
V
IH
V
H
IL
V
OL
Data Out (I/O7)
High-Z High-Z
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
D
OUT
IN
1000579
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 1. READ TIMING WAVEFORM
28LV010
Memory
1000579
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
7
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
28LV010
Memory
1000579
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All rights reserved.
8
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
28LV010
Memory
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All rights reserved.
9
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
28LV010
Memory
1000579
12.19.01 Rev 3
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All rights reserved.
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
28LV010
Memory
1000579
IGURE 6. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
F
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
11
All rights reserved.
Page 12
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
IGURE 8. DATA POLLING TIMING WAVEFORM
F
28LV010
Memory
1000579
12.19.01 Rev 3
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©2001 Maxwell Technologies
All rights reserved.
12
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 9. TOGGLE BIT WAVEFORM
28LV010
FIGURE 10. SEU SATURATED CROSS SECTION VALUES IN READ MODE
1.00E-02
1.00E-03
1.00E-04
1.00E-05
Cross-section [cm^2]
1.00E-06
Memory
28LV010 Read Mode Cross-s ection
lv1
lv2
lv5
lv6
1000579
1.00E-07
0 102030405060708090
LET [ Mev- cm^2/mg]
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
13
All rights reserved.
Page 14
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 11. SEU SATURATED CROSS SECTION VALUES IN WRITE MODE
28LV010 WRITE MODE AVERAGE CROS S-S ECTION
1.00E-01
1.00E-02
1.00E-03
28LV010
1.00E-04
CROSS-SECTION [cm^2]
1.00E-05
1.00E-06
0 102030405060708090
LET [MeV-cm^2/mg]
SL1
SL2
SL3
N4
N5
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte of data can be loaded within 30 µs. In case CE erase and write mode automatically and only the input data are written into the EEPROM.
and WE are kept high for 100(s after data input, EEPROM enters
Memory
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE
or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per­forming a write operation.
1000579
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
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14
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V the RDY/Busy
signal changes state to high impedance.
after the first write signal. At the-end of a write cycle,
OL
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch
RES function.
Memory
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis­take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20 ns on the control pins.
2. Data Protection at V
CC
on/off
1000579
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©2001 Maxwell Technologies
All rights reserved.
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V
RES
should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES should be kept high for 10 ms after the last data input.
on/off by using a CPU reset signal to RES pin.
CC
falls low during programming operation. RES
28LV010
Memory
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non­protection mode to the protection mode.
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec­tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
1000579
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
16
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
Memory
32-PIN RAD-PAK® FLAT PACKAGE
SYMBOL DIMENSION
MIN NOM MAX
A 0.121 0.134 0.147
b 0.015 0.017 0.022
c 0.004 0.005 0.009
D -- 0.820 0.830
E 0.472 0.480 0.488
E1 -- -- 0.498
E2 0.304 0.310 --
E3 0.030 0.085 --
e 0.050BSC
L 0.355 0.365 0.375
Q 0.020 0.035 0.045
S1 0.005 0.027 --
N32
F32-10
Note: All dimensions in inches
1000579
12.19.01 Rev 3
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©2001 Maxwell Technologies
All rights reserved.
17
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
Memory
32 PIN DUAL IN-LINE PACKAGE
DIMENSION
SYMBOL
MIN NOM MAX
A -- 0.152 0.225
b 0.014 0.018 0.026
b2 0.045 0.050 0.065
c 0.008 0.010 0.018
D -- 1.600 1.680
E 0.510 0.590 0.620
eA 0.600 BSC
eA/2 0.300 BSC
e 0.100 BSC
L 0.135 0.145 0.155
Q 0.015 0.037 0.070
S1 0.005 0.025 --
S2 0.005 -- --
N32
1000579
D32-02
Note: All dimensions in inches
12.19.01 Rev 3
All data sheets are subject to change without notice
18
©2001 Maxwell Technologies
All rights reserved.
Page 19
3.3V 1 Megabit (128K x 8-Bit) EEPROM
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech­nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
28LV010
Memory
1000579
12.19.01 Rev 3
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©2001 Maxwell Technologies
All rights reserved.
19
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3.3V 1 Megabit (128K x 8-Bit) EEPROM
)
Product Ordering Options
Model Number
28LV010
8LV010
XX
X X
-XX
Feature
Access Time
Screening Flow
Package
Option Details
20 = 200 ns 25 = 250 ns
Monolithic S = Maxwell Class S B = Maxwell Class B E = Engineering (testing @ +25°C I = Industrial (testing @ -55°C, +25°C, +125°C)
Memory
D = Dual In-line Package (DIP) F = Flat Pack
1000579
Radiation Feature
Base Product Nomenclature
12.19.01 Rev 3
RP = R
AD-PAK® package
RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level
3.3V 1 Megabit (128K x 8-Bit) EEPROM
All data sheets are subject to change without notice
20
©2001 Maxwell Technologies
All rights reserved.
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