Datasheet 27C010TRT4S20, 27C010TRT4S15, 27C010TRT4S12, 27C010TRT4I20, 27C010TRT4I15 Datasheet (MAXWELL)

1

Memory

All data sheets are subject to change without notice

[phone] - Fax: [phone] - www.maxwell.com

1 Megabit (128K x 8-Bit) -

OTP EPROM

27C010T

©2001 Maxwell Technologies

All rights reserved.

12.12.01 Rev 2

FEATURES:

• 128k x 8 Bit OTP EPROM organization

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- >100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SEL

TH

LET: > 80 MeV/mg/cm2

- SEU

TH

LET (read mode): >80 Mev/mg/cm

2

• Package:

- 32 pin R

AD-PAK® flat pack

- Weight - 6.0 grams

• Fast access time:

- 120, 150, 200 ns (max) times available

• Low power consumption:

- Active mode: 50 mW/MHz (typ)

- Standby mode: 5µW (typ)

• High speed page and word programming:

- Page programming time: 14 sec (typ)

• Programming power supply:

- V

PP

= 12.5 V ± 0.3 V

• One-time Programmable

• Pin Arrangement

- JEDEC standard byte-wide EPROM

- Flash memory and mask ROM compatible

DESCRIPTION:

Maxwell Technologies’ 27C010T high density 1 Megabit

One-time Programmable Electrically Programmable Read
Only Memory microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
27C010T features fast address times and low power dissipa­tion. The 27C010T offers high speed programming using page
programming mode. The 27C010T is offered in JEDEC-Stan­dard Byte-Wide EPROM pinouts, which allows socket replace­ment with Flash Memory and Mask ROMs.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack­age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R

AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.

1024 x 1024

Memory Matrix

X-Decoder

Input
Data

Control

Y-Gating

Y-Decoder

H

H

: High Threshold Inverter

V

SS

V

PP

V

CC

PGM

OE

CE

I/O7

I/O0

A16

A12

A9

A5

A0-A4 A10-A11

1

16 17

32 V

CC

PGM

NC
A14
A13

A8
A9

A11

OE
A10

CE
I/O7
I/O6
I/O5
I/O4
I/O3V

SS

I/O2

I/O1

I/O0

A1
A0

A2

A3

A4

A5

A6

A7

A12

A15

A16

V

PP

27C010T

Logic Diagram

Memory

2

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

TABLE 1. 27C010T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

12-5, 27, 26, 23, 25,

4, 28, 29, 3 ,2

A0 - A16 Address

I/O0 - I/O7 Input/Output

22 CE

Chip Enable

24 OE

Output Enable

32 V

CC

Power Supply

1V

PP

Programming Supply

16 V

SS

Ground

31 PGM

Programming Enable

30 NC No Connection

TABLE 2. 27C010T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNIT

Supply Voltage

1

1. Relative to VSS.

V

CC

-0.6 7.0 V

Programming Voltage

1

V

PP

-0.6 13.5 V

All Input and Output Voltage

1,2

2. VIN, V

OUT

, and VID min = -1.0V for pulse width < 20 ns.

V

IN

, V

OUT

-0.6 7.0 V

A9 Voltage

2

V

ID

-0.6 13.0 V

Operating Temperature Range T

A

-55 +125

°

C

Storage Temperature Range T

S

-65 +150

°

C

TABLE 3. DELTA LIMITS

PARAMETER VARIATION

ICC1 ±10% of value specified on Table 6
I

CC

2 ±10% of value specified on Table 6

I

CC

3 ±10% of value specified on Table 6

ISB ±10% of value specified on Table 6

Memory

3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

TABLE 4. 27C010T RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNITS
Supply Voltage V

CC

4.5 5.5 V

Input Voltage V

IL

-0.3

1

1. VIL min = -1.0V for pulse width < 50 ns.

0.8 V

V

IH

2.2 VCC +1

2

2. V

IH

max = VCC + 1.5V for pulse width < 20 ns.

Thermal Impedance

Θ

JC

-- 1.27 °C/W

Operating Temperature Range T

A

-55 +125

°

C

TABLE 5. 27C010T CAPACITANCE

1

1. Guaranteed by design.

P

ARAMETER SYMBOL MIN MAX UNIT

Input Capacitance C

IN

-- 10 pF

Output Capacitance C

OUT

-- 15 pF

TABLE 6. 27C010T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(VCC = 5V ± 10%, VPP = VSS, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SYMBOL TEST CONDITION

SUB

G

ROUPS

MIN TYP MIN UNIT

Input Leakage Current I

LI

VIN = 5.5V 1, 2, 3 -- -- 2 µA

Output Leakage Current I

LO

V

OUT

= 5.5V/0.45V 1, 2, 3 -- -- 2 µA

Standby V

CC

Current I

SB

CE = V

IH

1, 2, 3 -- -- 1 mA

Operating V

CC

Current I

CC1IOUT

= 0 mA, CE = V

IL

1, 2, 3 -- -- 30 mA

I

CC2IOUT

= 0 mA, f = 5 MHz 1, 2, 3 -- -- 30

I

CC3IOUT

= 0 mA, f = 10 MHz 1, 2, 3 -- -- 50

V

PP

Current I

PP1

VPP = 5.5V 1, 2, 3 -- 1 20 µA

Input Voltage V

IH

1, 2, 3 2.2 -- -- V

V

IL

1, 2, 3 -- -- 0.8

Output Voltage V

OHIOH

= -400 µA 1, 2, 3 2.4 -- -- V

V

OLIOL

= 2.1 mA 1, 2, 3 -- -- 0.45

Memory

4

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

TABLE 7. 27C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V ± 10%, VPP = VSS, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

1. Test conditions:

- Input pulse levels 0.45V/2.4V

- Input rise and fall times

< 10 ns

- Output load 1 TTL gate + 100 pF (including scope and jig)

- Referenced levels for measuring timing 0.8V/2.0V

P

ARAMETER TEST CONDITION SYMBOL SUB GROUPS MIN MAX UNIT

Address Access Time

- 120

- 150

- 200

CE

= OE = V

IL

t

ACC

9, 10, 11

--

--

--

120
150
200

ns

Chip Enable Access Time

- 120

- 150

- 200

OE

= V

IL

t

CE

9, 10, 11

--

--

--

120
150
200

ns

Output Enable Access TIme

- 120

- 150

- 200

CE

= V

IL

t

OE

9, 10, 11

--

--

--

60
70
70

ns

Output Hold to Address Change

- 120

- 150

- 200

CE

= V

IL

t

OH

9, 10, 11

0
0
0

--

--

--

ns

Output Disable to High-Z

2

- 120

- 150

- 200

2. t

DF

is defined as the time at which the output becomes an open circuit and data is no longer driven.

CE

= OE = V

IL

t

DF

9, 10, 11

0
0
0

50
50
50

ns

Memory

5

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

TABLE 8. 27C010T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS

1,2,3,4

(VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25°C)

1. V

CC

must be applied before VPP and removed after VPP.

2. V

PP

must not exceed 13V, inlcuding overshoot.

3. Do not change V

PP

from VIL to 12.5V or 12.5V to VIL when CE =LOW.

4. DC electrical paramters for programming operations are not tested. These parameters are guaranteed by design.

P

ARAMETER SYMBOL TEST CONDITION SUB GROUPS MIN MAX UNIT

Input Leakage Current I

LI

VIN = 0V to V

CC

1, 2, 3 -- 2 µA

Operating V

CC

Current I

CC

1, 2, 3 -- 30 mA

Operating V

PP

Current I

PP

CE = PGM = V

IL

1, 2, 3 -- 40 mA

Input Voltage

5

5. Device reliability may be adversely affected if the device is installed or removed while VPP = 12.5V.

V

IH

1, 2, 3 2.2 VCC +5

6

6. If VIH is over the specified maximum value, programming operation can not be guaranteed.

V

V

IL

1, 2, 3 -0.1

7

7. VIL min = -0.6V for pulse width < 20 ns.

0.8

Output Voltage V

OH

IOH = -400 µA 1, 2, 3 2.4 -- V

V

OL

IOH = 2.1 mA 1, 2, 3 -- 0.45

TABLE 9. 27C010T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS

1,2

(VCC = 6.25V + 0.25V, VPP = 12.5V ± 0.3V, TA = 25°C)

P

ARAMETER SYMBOL SUB GROUPS MIN TYP MAX UNIT

Address Setup Time t

AS

9, 10, 11 2 -- -- µs

Address Hold Time t

AH

9, 10, 11 0 -- -- µs

Data Setup Time t

DS

9, 10, 11 2 -- -- µs

Data Hold Time t

DH

9, 10, 11 2 -- -- µs

Chip Enable Setup TIme t

CES

9, 10, 11 2 -- -- µs

V

PP

Setup Time t

VPS

9, 10, 11 2 -- -- µs

V

CC

Setup Time t

VCS

9, 10, 11 2 -- -- µs

Output Enable Setup Time t

OES

9, 10, 11 2 -- -- µs

Output Disable Time t

DF

9, 10, 11 0 -- 130 ns

PGM

Initial Programming Pulse Width t

PW

9, 10, 11 0.19 0.20 0.21 ms

PGM

Overprogramming Pulse Width t

OPW

9, 10, 11 0.19 -- 5.25 ms

Data Valid from Output Enable Time t

OE

9, 10, 11 0 -- 150 ns

Output Enable Pulse During Data Latch t

LW

9, 10, 11 1 -- -- µs

Output Enable Hold Time t

OEH

9, 10, 11 2 -- -- µs

Chip Enable Hold Time t

CEH

9, 10, 11 2 -- -- µs

Memory

6

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

PGM Setup TIme t

PGMS

9, 10, 11 2 -- -- µs

1. Test conditions:

- Input pulse levels 0.45V / 2.4V

- Input rise and fall times

< 20 ns

- Referenced levels for measuring timing 0.8V/2.0V

2. AC electrical parameters for programming operation are not tested. These are guaranteed by design.

TABLE 10. 27C010T MODE SELECTION

1,2

MODE V

PP

V

CC

CE OE PGM A

0

I/O

R

EAD V

CC

V

CC

V

IL

V

IL

V

PP

XD

OUT

OUTPUT DISABLE V

CC

V

CC

V

IL

V

IH

V

IH

X High-Z

S

TANDBY V

CC

V

CC

V

IH

X X X High-Z

P

ROGRAM V

PP

V

CC

V

IL

V

IN

V

IL

XD

IN

PROGRAM VERIFY V

PP

V

SS

V

IL

V

IL

V

IH

XD

OUT

PAGE DATA LATCH V

PP

V

CC

V

IH

V

IL

V

IH

XD

IN

PAGE PROGRAM V

PP

V

CC

V

IH

V

IH

V

IL

X High-Z

P

ROGRAM INHIBIT V

CC

V

CC

V

IL

V

IL

V

IL

X High-Z

V

PP

V

CC

V

IL

V

IH

V

IH

X High-Z

V

PP

V

CC

V

IH

V

IL

V

IL

X High-Z

V

PP

V

CC

V

IH

V

IH

V

IH

X High-Z

I

DENTIFIER V

CC

V

CC

V

IL

V

IL

V

IH

V

IH

ID

1. X = Don’t care.

2. 11.5V <

VH < 12.5V.

TABLE 9. 27C010T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS

1,2

(VCC = 6.25V + 0.25V, VPP = 12.5V ± 0.3V, TA = 25°C)

P

ARAMETER SYMBOL SUB GROUPS MIN TYP MAX UNIT

Memory

7

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

FIGURE 1. READ TIMING WAVEFORM

FIGURE 1.

Memory

8

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

FIGURE 2. BYTE PROGRAMMING FLOWCHART

Memory

9

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

FIGURE 3. BYTE PROGRAMMING TIMING WAVEFORM

Memory

10

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

FIGURE 4. PAGE PROGRAMMING FLOWCHART

Memory

11

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

FIGURE 5. PAGE PROGRAMMING TIMING WAVEFORM

Memory

12

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

F32-09

Note: All dimensions in inches

32 PIN RAD-PAK® FLAT PACKAGE

SYMBOL

DIMENSION

MIN NOM MAX

A 0.194 0.207 0.220

b 0.015 0.017 ±.002 0.019

c 0.004 0.005 0.007
D 0.812 0.820 0.828
E 0.474 0.480 0.486

E1 -- -- 0.498
E2 0.304 0.310 0.316
E3 0.030 0.085 --

e 0.050 BSC

L 0.370 0.380 0.390
Q 0.067 0.070 0.073

S1 0.005 0.027 --

N32

32LDFP

Memory

13

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

Important Notice:
These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies

functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to

date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.

Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.

Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech­nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.

Memory

14

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) - OTP EPROM

27C010T

12.12.01 Rev 2

Product Ordering Options

Model Number

Feature

Option Details

27C010T

XX

F X

-XX
Access Time

Screening Flow

Package

Radiation Feature

Base Product
Nomenclature

12 = 120 ns
15 = 150 ns
20 = 200 ns

Monolithic
S = Maxwell Class S
B = Maxwell Class B
E = Engineering (testing @ +25°C

)

I = Industrial (testing @ -55°C,
+25°C, +125°C)

F = Flat Pack

RP = R

AD-PAK® package

RT1 = Guaranteed to 10 krad at
die level
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
die level

1 Megabit (128K x 8-Bit) - OTP
EPROM