Datasheet 25TTS12STRR, 25TTS12STRL, 25TTS08STRR, 25TTS08STRL Datasheet (International Rectifier)

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Bulletin I2117

25TTS..S SERIES

PHASE CONTROL SCR

Description/Features

The 25TTS..S new series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli­able operation up to 125° C junction temperature.

Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi­cal package outlines.

V
I

TSM

T

< 1.25V @ 16A
= 250A

VR/ VD= 1200V

Output Current in Typical Applications

Applications Single-phase Bridge Three-phase Bridge Units

NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper

3.5 5.5

Aluminum IMS, R
Aluminum IMS with heatsink, R

TA = 55°C, TJ = 125°C, footprint 300mm

thCA

Major Ratings and Characteristics

Characteristics 25TTS..S Units

I

T(AV)

I

RMS

V
I

TSM

V
dv/dt 500 V/µs
di/dt 150 A/µs
T

Sinusoidal 16 A
waveform

V

/

RRM

DRM

@ 16 A, TJ = 25°C 1.25 V

T

J

= 15°C/W 8.5 13.5 A

= 5°C/W 16.5 25.0

thCA

2

25 A

800 and 1200 V

250 A

D2 PAK (SMD-220)

- 40 to 125 °C

1

25TTS.. S Series

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Voltage Ratings

Part Number

25TTS08S 800 800 5
25TTS12S 1200 1200

Absolute Maximum Ratings

V

, maximum V

RRM

, maximum I

DRM

RRM/IDRM

peak reverse voltage peak direct voltage 125°C

VVmA

Parameters 25TTS..S Units Conditions

I

Max. Average On-state Current 16 A 50% duty cycle @ TC = 94° C, sinusoidal wave form

T(AV)

I

Max. RMS On-state Current 25

RMS

I

Max. Peak One Cycle Non-Repetitive 210 10ms Sine pulse, rated V

TSM

Surge Current 250 10ms Sine pulse, no voltage reapplied

I2t Max. I2t for fusing 220 A2s 10ms Sine pulse, rated V

310 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 3100 A2√s t = 0.1 to 10ms, no voltage reapplied
V

Max. On-state Voltage Drop 1.25 V @ 16A, TJ = 25°C

TM

r
V

On-state slope resistance 12.0 mΩ TJ = 125°C

t

Threshold Voltage 1.0 V

T(TO)

IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C

Leakage Current 5.0 TJ = 125 °C

I

Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A

H

I

Max. Latching Current 200 mA Anode Supply = 6V, Resistive load

L

dv/dt Max. rate of rise of off-state Voltage 500 V/µs

applied

RRM

applied

RRM

VR = rated V

RRM

/ V

DRM

di/dt Max. rate of rise of turned-on Current 150 A/µs

2

Triggering

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Parameters 25TTS..S Units Conditions

P

Max. peak Gate Power 8.0 W

GM

P

Max. average Gate Power 2.0

G(AV)

+ IGMMax. paek positive Gate Current 1.5 A

- VGMMax. paek negative Gate Voltage 10 V
I

Max. required DC Gate Current 60 mA Anode supply = 6V, resistive load, TJ = - 10°C

GT

to trigger 45 Anode supply = 6V, resistive load, TJ = 25°C

20 Anode supply = 6V, resistive load, TJ = 125°C

V

Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, TJ = - 10°C

GT

to trigger 2.0 Anode supply = 6V, resistive load, TJ = 25°C

1.0 Anode supply = 6V, resistive load, TJ = 125°C

V

Max. DC Gate Voltage not to trigger 0.25 TJ = 125°C, V

GD

I

Max. DC Gate Current not to trigger 2.0 mA TJ = 125°C, V

GD

= rated value

DRM

= rated value

DRM

25TTS.. S Series

Switching

Parameters 25TTS..S Units Conditions

t

Typical turn-on time 0.9 µs TJ = 25°C

gt

t

Typical reverse recovery time 4 TJ = 125°C

rr

t

Typical turn-off time 110

q

Thermal-Mechanical Specifications

Parameters 25TTS..S Units Conditions

T

Max. Junction Temperature Range - 40 to 125 °C

J

T

Max. Storage Temperature Range - 40 to 125 °C

stg

Soldering Temperature 2 40 °C for 10 seconds (1.6mm from case)

R

Max. Thermal Resistance Junction 1.1 °C/W DC operation

thJC

to Case

R

Typ. Thermal Resistance Junction 40 °C/W

thJA

to Ambient (PCB Mount)**

wt Approximate Weight 2 (0.07) g (oz.)
T Case Style D2 Pak (SMD-220)

**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W

For recommended footprint and soldering techniques refer to application note #AN-994

3

25TTS.. S Series

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125

120

115

110

105

100

95

90

Maximum Allowable Case Temperature (°C)

0 2 4 6 8 10 12 14 16 18

25TTS.. Series
R (DC) = 1.1 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

30

180°

5

120°

90°
60°
30°

RMS Limit

Cond uction An gle

25TTS..
T = 125°C

J

25

20

15

10

180°

125

25TTS.. Series

120

115

110

105

100

95

90

85

Maximum Allowable Case Temperature (°C)

30°

0 5 10 15 20 25 30

Average On-state Current (A)

R (DC) = 1.1 K/W

thJC

Conduction Period

60°

90°

120°

180°

Fig. 2 - Current Rating Characteristics

35

30

25

20

15

10

RMS Limit

5

DC
180°
120°

90°

60°

30°

Conduction Period

25TTS..
T = 125°C

J

DC

0

0 5 10 15 20

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

230

210

190

170

150

130

110

Peak Half Sine Wave On-state Current (A)

Number Of Equal Amplitude Ha lf Cycle Current Pulses (N)

Fig. 6 - Maximum Non-Repetitive Surge Current

At Any Rated Load Condition And With

Rated V Applied Following Surge.

25T TS..Series

90

1 10 100

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

0

0 5 10 1 5 20 25 30

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

270

250

230

210

190

170

150

130

110

Peak Half Sine Wave Forward Current (A)

Fig. 7 - Maximum Non-Repetitive Surge Current

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration.

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

25TTS.. Series

90

70

0.01 0.1 1 10

Pulse Tr ain Duration (s)

J

RRM

4

1000

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100

25TTS.. S Series

10

Instantaneous On-state Current (A)

1

012345

Instantaneous On-state Voltage (V)

T = 25°C

J

T = 125°C

J

25TTS.. Series

Fig. 7 - On-state Voltage Drop Characteristics

100

Rectangular gate pulse
a)Recommended loa d line for

rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/dt : 10 V, 65 ohms

10

tr = 1 µs, tp >= 6 µs

TJ = -10 °C

TJ = 25 °C

TJ = 125 °C

1

VGD

Instan taneous Gate Voltage (V)

IG D

0.1

0.001 0.01 0.1 1 10 100

25TTS..

Insta ntaneou s Gate Current (A)

(a)

(b)

(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms

(3) (2)

(4)

Frequency Limited by PG(AV)

(1)

10

thJC

1

0.1

Transient Thermal Impedance Z (K/W)

0.01

0.0001 0. 001 0.01 0.1 1

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Fig. 8 - Gate Characteristics

Single Pulse

Square Wave Pulse Durat ion (s)

Fig. 9 - Thermal Impedance Z

5

Steady State Value
(DC Operation)

25TTS.. Series

Characteristics

thJC

25TTS.. S Series

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Marking Information

EXAMPLE: THIS IS AN 25TTS12S

Tape & Reel Information

TR R

FEED DIRECTION

TRL

1. 85 ( 0.073)

1. 65 ( 0.065)

4. 10 (0.1 61)

3. 90 (0.1 53)

INTERNATIONAL
RECTIFIER LOGO

ASSEMBLY
LOT CODE

1.60 (0.063)

1.50 (0.059)

25TTS12S

9G3A

(K) (G)

1.6 0 ( 0. 063)

1.5 0 ( 0. 059)

11.60 (0.457)

11.40 (0.449)

(A)

9512

DIA.

15.42 (0.609)

15.22 (0.601)

PART NUMBER

DATE CODE (YYWW)
YY = YEAR

WW = WEEK

0.368 (0.0145)

0.342 (0.0135)

24. 30 (0.957)

23. 90 (0.941)

FEED DIRECTION

360 ( 14.173 )

DIA. MAX.

13.50 (0.532)

12.80 (0.504)

10.90 (0.429)

10.70 (0.421)

DIA.

1.7 5 ( 0. 069)

1.2 5 ( 0. 049)

16.10 (0.634)

15.90 (0.626)

Dimensions in millimeters and inches

26.40 (1.039)

24.40 (0.961)

60 (2.362)
DIA. MIN.

DIA.

4.7 2 ( 0. 186)

4.5 2 ( 0. 178)

SMD-220 Tape & Reel

When ordering, indicate th e part
number, part orientation, and the
quantity. Quantities are in multiples
of 800 pieces per reel f or both
TR L and TRR.

6

Outline T able

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25TTS.. S Series

15.49 (0.61)

14.73 (0.58)

1.40 (0.055)

3X

1.14 (0.045)

1 (K) Cathode
2 (A) Anode
3 (G) Gate

93°

10.16 (0. 40)
REF.

(K) (G)

13

2

(A)

2.61 (0.10)

2.32 (0.09)

8.89 (0.35)

REF.

0.93 (0.37)

2X

0.69 (0.27)

5. 08 (0.20) REF.

6.47 ( 0.25)

6.18 (0.24)

4.57 (0.18)

4.32 (0.17)

0.61 (0.02) MAX.

4.69 (0.18)

4.2 0 (0.16)

1.32 (0.05)

1.22 (0.05)

5.28 (0.21)

4.78 (0.19)

0.55 ( 0.02)

0.46 ( 0.02)

MINIMU M R E C OMME N D E D F OOT P R IN T

11.43 (0.45)

8.89 (0.35)

17.78 (0.70 )

3.8 1 (0.15)

Dimensions in millimeters and inches

Ordering Information T able

Device Code

25 T T S 12 S TRL

1 5243

1 - Current Rating, RMS value
2 - Circuit Configuration

T = Single Thyristor

3 - Package

T = TO-220AC

4 - Type of Silicon

S = Converter Grade

5 - Voltage code: Code x 100 = V
6 - S = TO-220 D2Pak (SMD 220) Version
7 - Tape and Reel Option

TRL = Left Reel
TRR = Right Orientation Reel

RRM

6

08 = 800V
12 = 1200V

2.08 (0.08)
2X

2.54 (0.10)

2

(A)

1 (K)

2X

(G) 3

7