Datasheet 25TTS12, 25TTS08 Datasheet (International Rectifier)

PHASE CONTROL SCR

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Bulletin I2116

25TTS.. SERIES

Description/Features

The 25TTS.. new series of silicon controlled recti­fiers are specifically designed for medium power
switching and phase control applications. The
glass passivation technology used has reliable
operation up to 125° C junction temperature.

Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi­cal package outlines.

V

T

I

TSM

VR/ VD= 1200V

< 1.25V @ 16A
= 200A

Output Current in Typical Applications

Applications Single-phase Bridge Three-phase Bridge Units

Capacitive input filter
common heatsink of 1°C/W

Major Ratings and Characteristics

Characteristics 25TTS.. Units

I

T(AV)

I

RMS

V
I

TSM

V
dv/dt 500 V/µs
di/dt 150 A/µs
T

Sinusoidal 16 A
waveform

V

/

RRM

DRM

@ 16 A, TJ = 25°C 1.25 V

T

J

= 55°C,

T

A

= 125°C, 18 22 A

T

J

25 A

800 and 1200 V

250 A

TO-220AC

- 40 to 125 °C
Also available in SMD-220 package (series 25TTS..S)

1

25TTS.. Series

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Voltage Ratings

Part Number

25TTS08 800 800 5
25TTS12 1200 1200

Absolute Maximum Ratings

V

, maximum V

RRM

, maximum I

DRM

RRM/IDRM

peak reverse voltage peak direct voltage 125°C

VVmA

Parameters 25TTS.. Units Conditions

I

Max. Average On-state Current 16 A 50% duty cycle @ TC = 90° C, sinusoidal wave form

T(AV)

I

Max. RMS On-state Current 25

RMS

I

Max. Peak One Cycle Non-Repetitive 210 10ms Sine pulse, rated V

TSM

Surge Current 250 10ms Sine pulse, no voltage reapplied

I2t Max. I2t for fusing 220 A2s 10ms Sine pulse, rated V

310 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 3100 A2√s t = 0.1 to 10ms, no voltage reapplied
V

Max. On-state Voltage Drop 1.25 V @ 16A, TJ = 25°C

TM

r
V

On-state slope resistance 12.0 mΩ TJ = 125°C

t

Threshold Voltage 1.0 V

T(TO)

IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C

Leakage Current 5.0 TJ = 125 °C

I

Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A

H

I

Max. Latching Current 200 mA Anode Supply = 6V, Resistive load

L

dv/dt Max. rate of rise of off-state Voltage 500 V/µs

applied

RRM

applied

RRM

VR = rated V

RRM

/ V

DRM

di/dt Max. rate of rise of turned-on Current 150 A/µs

2

Triggering

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Parameters 25TTS.. Units Conditions

P

Max. peak Gate Power 8.0 W

GM

P

Max. average Gate Power 2.0

G(AV)

+ IGMMax. paek positive Gate Current 1.5 A

- VGMMax. paek negative Gate Voltage 10 V
I

Max. required DC Gate Current 60 mA Anode supply = 6V, resistive load, TJ = - 10°C

GT

to trigger 45 Anode supply = 6V, resistive load, TJ = 25°C

20 Anode supply = 6V, resistive load, TJ = 125°C

V

Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, TJ = - 10°C

GT

to trigger 2.0 Anode supply = 6V, resistive load, TJ = 25°C

1.0 Anode supply = 6V, resistive load, TJ = 125°C

V

Max. DC Gate Voltage not to trigger 0.25 TJ = 125°C, V

GD

I

Max. DC Gate Current not to trigger 2.0 mA TJ = 125°C, V

GD

= rated value

DRM

= rated value

DRM

25TTS.. Series

Switching

Parameters 25TTS.. Units Conditions

t

Typical turn-on time 0.9 µs TJ = 25°C

gt

t

Typical reverse recovery time 4 TJ = 125°C

rr

t

Typical turn-off time 110

q

Thermal-Mechanical Specifications

Parameters 25TTS.. Units Conditions

T

Max. Junction Temperature Range - 40 to 125 °C

J

T

Max. Storage Temperature Range - 40 to 125

stg

R

Max. Thermal Resistance Junction 1.1 °C/W DC operation

thJC

to Case

R

Max. Thermal Resistance Junction 62

thJA

to Ambient

R

Typ. Thermal Resistance Case 0.5 Mounting surface, smooth and greased

thCS

to Ambient

wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)

Max. 12 (10)

Case Style TO-220AC

Kg-cm
(Ibf-in)

3

25TTS.. Series

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125

120

115

110

105

100

95

90

Maximum Allowable Case Temperature (°C)

0 2 4 6 8 1012141618

25TTS.. Series
R (DC) = 1.1 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

30

180°

5

120°

90°
60°
30°

RMS Limit

Conduction Angle

25TTS..
T = 125°C

J

25

20

15

10

180°

125

25TTS.. Series

120

115

110

105

100

95

90

85

Maxi mum Allowable Case T emp erat ure (°C)

30°

0 5 10 15 20 25 30

Average On-state Current (A)

R (DC) = 1.1 K/W

thJC

Conduction Period

60°

90°

120°

180°

Fig. 2 - Current Rating Characteristics

35

30

25

20

15

10

RMS Limit

5

DC
180°
120°

90°
60°
30°

Conduction Period

25TTS..
T = 125°C

J

DC

0

0 5 10 15 20

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics

230

210

190

170

150

130

110

Peak Half Sine Wave On-state Current (A)

Number Of Eq ual Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

At Any Rated Load Condition And With

Rated V Applied Following Surge.

25T TS..Series

90

1 10 100

RRM

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

0

0 5 10 15 20 25 30

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 4 - On-state Power Loss Characteristics

270

250

230

210

190

170

150

130

110

Peak Hal f Sine Wave Forwa rd Current (A)

Fig. 67 - Maximum Non-Repetitive Surge Current

Maximum Non Repetitive Surge Current

Versus Pulse Train D uration.

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

25TTS.. Series

90

70

0.01 0.1 1 10

Pulse Train Durat io n (s)

J

RRM

4

1000

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100

25TTS.. Series

10

Instantaneous On-state Current (A)

1

012345

Instantaneous On-state Voltage (V)

T = 25°C

J

T = 125°C

J

25TTS.. Series

Fig. 7 - On-state Voltage Drop Characteristics

100

Rectangular gate pulse

a)Recommended load line for

rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/ dt: 10 V, 65 ohms

10

tr = 1 µs, tp >= 6 µs

TJ = -10 °C

TJ = 25 °C

TJ = 125 °C

1

VGD

Instantaneous Gate Voltage (V)

IGD

0.1

0.001 0.01 0.1 1 10 100

Instantaneous Gate Current (A)

(a)

(b)

(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms

(3) (2)

(4)

Frequency Limited by PG(AV)25TTS..

(1)

10

thJC

1

0.1

Transient Thermal Impedance Z (K/W)

0.01

0.0001 0.001 0.01 0.1 1

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Fig. 8 - Gate Characteristics

Sing le Pulse

Square Wave Pulse D uration (s)

Fig. 9 - Thermal Impedance Z

5

Steady State Value
(DC Operat ion)

25TTS.. Series

Characteristics

thJC

25TTS.. Series

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Outline T able

15.24 (0.60)

14.84 (0.58)

14.09 (0.55)

13.47 (0.53)

4.57 (0.18)

4.32 (0.17)

2

1.40 (0.05)

1.15 (0.04)

10.54 (0.41)
MAX.

3

1

2

3

1

2

3.78 (0.15)

3.54 (0.14)

2.92 (0.11)

2.54 (0.10)

TERM 2

3.96 (0.16)

3.55 (0.14)

2.04 (0.080) MAX.

0.94 (0.04)

0.69 (0.03)

0.61 (0.02) MAX.

DIA.

1.32 (0.05)

1.22 (0.05)

6.48 (0.25)

6.23 (0.24)

2°

0.10 (0.004)

2.89 (0.11)

2.84 (0.10)

Ordering Information T able

Device Code

25 T T S 12

1

1- Current Rating, RMS value
2 - Circuit Configuration

T = Single Thyristor

3 - Package

T = TO-220AC

4 - Type of Silicon

S = Converter Grade

5 - Voltage code: Code x 100 = V

5.08 (0.20) REF.

3

524

RRM

08 = 800V
12 = 1200V

Dimensions in millimeters (and inches)

2

(A)

(G) 3

1 (K)

6